Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO82 PACKAGE Search Results

    TO82 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO82 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


    Original
    2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229 PDF

    LT019

    Abstract: tip410 B0243C LT011S LT019S 182T2C LT011 182T2 TO82 BU312
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron ~~~~~~~ ~entron EUT019R EUT019RS EUT019S LT011 LT011 A LT011RS LT011S LT012 LT012S LT019 LT019R LT019RS LT019S 2N1490


    Original
    EST011R EST011RS EST011S EST012 EST012R EST012RS EST012S EST019 EST019R EST019RS LT019 tip410 B0243C LT011S LT019S 182T2C LT011 182T2 TO82 BU312 PDF

    HHS-110

    Abstract: No abstract text available
    Text: Hybrid Junction, 10 - 500 MHz HH-/HHS-110/HH-127 V 3.00 Features n n n n n n FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available


    Original
    HH-/HHS-110/HH-127 HH-110) HHS-110) MIL-STD-202 HH-127) HH-127 HHS-110 PDF

    HH-110

    Abstract: HH-127 HHS-110
    Text: HH- / HHS-110 / HH-127 Hybrid Junction, 10 - 500 MHz Rev. V3 Features • • • • • • FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available


    Original
    HHS-110 HH-127 HH-110) HHS-110) MIL-STD-202 HH-127) HH-110 HH-127 PDF

    HH-110

    Abstract: HH-127 HHS-110
    Text: Hybrid Junction, 10 - 500 MHz Features • • • • • • HH-/HHS-110/HH-127 V3 FP-2 HH-110 Broad Frequency Range Fully Hermetic Package (HHS-110) High Isolation: Typically 30 dB Impedance: 50 Ohms Nominal Input Power: 1 Watt Maximum MIL-STD-202 Screening Available


    Original
    HH-/HHS-110/HH-127 HH-110) HHS-110) MIL-STD-202 HH-127) HH-110 HHS-110 HH-127 HHS-110 PDF

    2N5034 package

    Abstract: 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199
    Text: POWER SILICON NPN Ic Item Number Part Number I C 5 10 20 25081 25081 SK3272 25015 2N5034 2N5034 2N5034 2N5035 .v :g~~~ 25 30 40514 B0197 B0197 B0243 B0291 B0291 B0291 151-05 ~~~:g~ 35 40 40542 2N6374 2SC2491 2SC2198 25016 25050 2N1512 40627 :g~~j 45 50 -


    Original
    So10u 1200n O-220 O-220AB O-218var 2N5034 package 2N5034 180T2A B0243A TO-219AA 2SC2491 sanken 2SC2825 2N5035 2SC1777 B0199 PDF

    UPD789166GB-8ES

    Abstract: uPD789166
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD789166, 789167, 789176, 789177 8-BIT SINGLE-CHIP MICROCONTROLLERS The µPD789166, 789167, 789176, and 789177 are products of the µPD789167 and 789177 Subseries smallscale package, general-purpose applications in the 78K/0S Series.


    Original
    PD789166, PD789167 78K/0S PD78F9177, PD789176, U14186E U11047E UPD789166GB-8ES uPD789166 PDF

    nec 2Sb617

    Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85


    Original
    IDA1263 IDC3180 2SA1263 2SC3180 BDT41B BDT42B BD244B SSP82B nec 2Sb617 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617 PDF

    DS-109

    Abstract: DS-319
    Text: Two-Way Power Divider 10 - 500 MHz DS-109/319 V2.00 FP-2 Features ● ● ● 1° Phase Balance Max 35 dB Typical Midband Isolation 1.1 Typical Midband VSWR Guaranteed Specifications* MODEL PIN 0.015 DIA ±0.005 0.038 ±0.13 8 PLACES 10-500 10-500 MHz 0.6


    Original
    DS-109/319 DS-109 DS-319 DS-109 DS-319 PDF

    JH-114

    Abstract: JH-133
    Text: Quadrature Hybrid 20 - 40 MHz JH-114/133 V2.00 FP-2 Features ● ● ● ● ● ● ● Octave Bandwidth 3° Maximum Phase Deviation from 90° Low loss: 0.5 dB Max. Impedance: 50 Ohms Nom. Input Power: 5 W. Max. @ 25°C Derated to 1 W. @ 100°C Typical Phase Linearity: 3° from Straight Line


    Original
    JH-114/133 MIL-STD-202 JH-114 JH-133 PDF

    TO82

    Abstract: DS-331
    Text: Two-Way Power Divider 750 - 1500 MHz DS-331 V2.00 TO-8-2 Features ● 2° dB Phase Balance Typical ● 20 dB Typical Midband Isolation ● 1.5:1 Typical Midband VSWR, Input Guaranteed Specifications* Frequency Range From -55°C to +85°C 750 - 1500 MHz Insertion Loss (Less coupling)


    Original
    DS-331 MIL-STD-202 TO82 DS-331 PDF

    TO82

    Abstract: 8087 CH-138
    Text: 11 dB Bi-directional Coupler 10 - 500 MHz CH-138 V2.00 TO-8-2 Features ● Constant Coupling — Within ±0.5 dB Max Guaranteed Specifications* Bottom of Case is AC Ground. Dimensions in are in mm. Unless Otherwise Noted: .xxx = ±0.010 (.xx = ±0.25)


    Original
    CH-138 CH-138 TO82 8087 PDF

    TO82 TRANSISTOR

    Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan
    e6DjP073L. 254D22 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1016 2N1016A TO82 TRANSISTOR npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227 PDF

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan
    25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227 PDF

    Untitled

    Abstract: No abstract text available
    Text: Biphase Modulators 700 - 2000 MHz PM-125/126/127 PM-126 TO-8-2 Features • Variety of Drivers 0.200 TYP (5.08) < —0.100 TYP (2.54) • Amplitude Balance: .Id B T y p P10 • Hermetic TO -8 Package Guaranteed Specifications1 0.200 TYP (5.08) 700 - 2000 MHz


    OCR Scan
    PM-125/126/127 PM-126 PM-125 PM-126 PM-127 PDF

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Text: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


    OCR Scan
    2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C PDF

    TO82

    Abstract: PM-103
    Text: an A M P com pany Biphase Modulators 1 0 -7 5 0 MHz PM-101/102/103 V 2.00 Features • • • TO-8-2 Variety o f Drivers: PM-101; Current, PM-102; ECL, PM-103; TTL Phase Deviation - 1° Typical TO-8 Case <—0.200 TYP 5.08 ^ Guaranteed Specifications* 1


    OCR Scan
    PM-101; PM-102; PM-103; PM-101/102/103 Opera344 TO82 PM-103 PDF

    Untitled

    Abstract: No abstract text available
    Text: Afa ü Hybrid Junction 10-500 MHZ HH-110/127 FP-2 • Broad Frequency Range ■ High Isolation — Typically 30 dB ■ Available in Flatpack and TO-8 Packages TO-8-2 PIN 0.015 D IA *0.005 Guaranteed Specifications* From - 5 5 ° C to + 85°C Frequency Range


    OCR Scan
    HH-110/127 HH-110 HH-127 PDF

    Untitled

    Abstract: No abstract text available
    Text: f a n A M P ,c o m p a n y Hybrid Junction 10-500 MHz HH/HHS-110/HH-127 V2.00 Features • • • • • • FP-2 P IN 0 . 0 1 5 D IA ± 0 .0 0 5 Broad Frequency Range Fully Hermetic Package HHS-110 High Isolation: Typically 30 dB Impedance: 50 Ohms Nom.


    OCR Scan
    HHS-110) MIL-STD-202 HH/HHS-110/HH-127 PDF

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


    OCR Scan
    7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240 PDF

    Untitled

    Abstract: No abstract text available
    Text: M/A-COM/ MICROELECTRONICS b'ìE D • Sb421fl3 Q 0 0 1 G 3 S bTH «I1ACO A ßt Biphase Modulators 700 - 2000 MHz PM-125/126/127 PM-126 TO-8-2 Features • Variety of Drivers • Amplitude Balance: .IdB Typ • Hermetic TO-8 Package Guaranteed Specifications1


    OCR Scan
    Sb421fl3 PM-125/126/127 PM-126 PM-125 PDF

    PM-103-PIN

    Abstract: PM-103 PM-101
    Text: Biphase Modulators 10-750 MHz PM-101/102/103 • Variety of Drivers: PM-101; Current, PM-102; ECL, PM-103; TTL ■ Phase Deviation — 1° Typical ■ TO-8 Case TO-8-2 0.250 MIN 0.187 M A X <«•«> 4.7 Guaranteed Specifications* (From - 55°C to + 85°C)


    OCR Scan
    PM-101; PM-102; PM-103; PM-101/102/103 PM-103-PIN PM-103 PM-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: m an A M P company Three-Way Power Divider 3 - 700 MHz DS-328 TO-8-2 Features • 0.250 MIN 6.35 0.200 TYP (5.08) <— 0.100 TYP (2.54) • 0.4 dB Typical Midband Insertion Loss • 28 dB Typical Midband Isolation 0.220 MAX » -(5 .5 9 ) P10 1.2:1 Typical Input VSWR


    OCR Scan
    DS-328 DS-328 PDF

    Untitled

    Abstract: No abstract text available
    Text: A fa Flat pack Three-Way Power Divider 3-700 MHz • 0 .4 dB Typical Midband Insertion Loss ■ 28 dB Typical Midband Isolation ■ 1.2:1 Typical Input V S W R DS-328 TO-8-2 Guaranteed Specifications* From - 5 5 °C to + 8 5 ° C Frequency Range Insertion Loss


    OCR Scan
    DS-328 IL-STD-883 DS-328 PDF