To5 transistor
Abstract: PIN photodiode 500 nm
Text: DATA SHEET PSS5-7-TO5 SILICON PHOTODIODE TYPE PSS5-7-TO5 PSS5-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon
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PSS15-7-TO5
Abstract: PIN photodiode 500 nm TO5 package To5 transistor
Text: DATA SHEET PSS15-7-TO5 SILICON PHOTODIODE TYPE PSS15-7-TO5 PSS15-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 5 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically sealed TO5 case with a glass window. Pacific Silicon Sensor Inc. can also fabricate Silicon
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PSS15-7-TO5
PSS15-7-TO5
PIN photodiode 500 nm
TO5 package
To5 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET WS-7.56-TO5 WAVELENGTH SENSOR WS-7.56-TO5 SPECIAL CHARACTERISTICS • • • • Two p-n junctions constructed vertically Operating range: 450 - 900 nm Spectral resolution: 0.01 nm Specially for monochromatic light PARAMETERS Part No. WS-7.56-TO5
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56-TO5
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PSS10-7-TO5
Abstract: PIN photodiode 500 nm PIN photodiode 300 nm
Text: DATA SHEET PSS10-7-TO5 SILICON PHOTODIODE TYPE PSS10-7-TO5 PSS10-7-TO5 is a PIN Silicon PHOTODIODE with an Active Area 10 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically
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PSS10-7-TO5
PSS10-7-TO5
PIN photodiode 500 nm
PIN photodiode 300 nm
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Untitled
Abstract: No abstract text available
Text: HC35 TO5 Crystals Outline in mm ISSUE 9; 19 JUNE 1998 Delivery Options • 8.5 Express Manufacturing Service available, subject to piece part stock availability 6.6 Holder Style ■ HC35 (TO5) crystals are resistance welded, hermetically sealed in an inert atmosphere with glass to metal
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50ppm
10ppm
20ppm
25ppm
50ppm
100ppm
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Untitled
Abstract: No abstract text available
Text: HC35 TO5 Crystals ISSUE 10 ; 6 OCTOBER 2004 Outline in mm Delivery Options 8.5 Please contact our sales office for current leadtimes 6.6 • ■ HC35 (TO5) crystals are resistance welded, hermetically sealed in an inert atmosphere with glass to metal seals securing the lead wires
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10ppm,
15ppm,
20ppm,
30ppm,
50ppm,
100ppm
10ppm
20ppm
25ppm
50ppm
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL5N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL5N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package, utilizing a
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Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-FW5 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can Flat SiO2 window Beam angle 114 deg. Description DUV-FW5 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package, utilizing a flat quartz
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Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL5NR • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO5 metal can with reflector Hemispherical SiO2 lens Beam angle 4 deg. Description DUV-HL5NR is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO5 package with integrated
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Abstract: No abstract text available
Text: Preliminary Data Sheet MTCSiCO Integral True Colour Sensor – TO5 with optics Table of contents 1 FUNCTION . 2 2 APPLICATION . 2
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NTE5408
Abstract: NTE5409 NTE5408 SCR NTE5410 SCR 40A 600V
Text: NTE5408 thru NTE5410 Silicon Controlled Rectifier SCR 3 Amp Sensitive Gate, TO5 Description: The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void−free glass−passivated chips and are hermetically sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
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NTE5408
NTE5410
NTE5410
NTE5409
NTE5408 SCR
SCR 40A 600V
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NTE5427
Abstract: 7A 400v scr NTE5428 NTE5429
Text: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE5427
NTE5429
NTE5427
NTE5428
7A 400v scr
NTE5428
NTE5429
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TO5 package
Abstract: Anadigics TO5 packages Photodiode 1550nm sensitivity InGaAs Photodiode 1550nm
Text: PD2M 2mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD2M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD2M-1xx TO5 can Package PRODUCT DESCRIPTION
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NTE941
Abstract: No abstract text available
Text: NTE941 Integrated Circuit Operational Amplifier Description: The NTE941 is a general purpose operational amplifier in an 8–Lead TO5 Metal Can type package and offers many features which make its application nearly foolproof: overload protection on the input
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NTE941
NTE941
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BMH161
Abstract: F57518 F57515 TO8 package
Text: VOLTAGE CONTROLLED OSCILLATORS Thin film VOLTAGE CONTROLLED OSCILLATORS THIN FILM F57, TO5 & TF5 SERIES Features Operating characteristics • Frequency range: 100 to 5600 MHz • Hermetic package • Temperature range: - 40 to + 100° C Applications Ordering information
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F57XXX:
BMH161
BMH161
F57518
F57515
TO8 package
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TO5 package
Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
Text: PD3M 3mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD3M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD3M-1xx TO5 can Package PRODUCT DESCRIPTION
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"infrared distance sensor" 1997
Abstract: 5966-1624E Reflective Optical Sensor high resolution spot light size photodiode HP transistor cross reference
Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
5965-5947E
5966-1624E
"infrared distance sensor" 1997
5966-1624E
Reflective Optical Sensor high resolution
spot light size photodiode
HP transistor cross reference
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ULM763-01-TN-S46FTT
Abstract: ULM763-03-TN-S46FOP ULM763-03-TN-S46FTT
Text: Single Mode VCSEL 763nm TO5 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor Narrow linewidth > 2nm tunability with TEC High performance and reliability INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT
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763nm
E2000
ULM763-01-TN-S46FTT
ULM763-03-TN-S46FOP
ULM763-03-TN-S46FTT
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Reflective Optical Sensor focused
Abstract: light sensor 3 bin Reflective Optical Sensor high resolution transistor a999 HBCS-4999 HBCS-A998 HBCS-A999 HEDS1300 HEDS-1300
Text: Optical Reflective Sensor Technical Data HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr The HEDS-1300 sensor is fully integrated modules designed for
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HEDS-1300
5966-1624E
5988-4570EN
Reflective Optical Sensor focused
light sensor 3 bin
Reflective Optical Sensor high resolution
transistor a999
HBCS-4999
HBCS-A998
HBCS-A999
HEDS1300
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TO-205AA
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2891LL
O-205AA)
TO-205AA
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PC107
Abstract: PC10-6 TO5
Text: Pacific Silicon Sensor Series 7 Data Sheet Part Description PC10-7-TO5 Order # 03-006 ACTIVE AREA: 10mm 2 3.57mm DIA PIN 1 ANODE 4.2 Ø0.48 3 PL Ø9.20 Ø8.26 PIN 2 CATHODE & CASE 64° VIEWING Ø6.60 ANGLE 4.06 SQ 1.95 DESCRIPTION APPLICATIONS • • •
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PC10-7-TO5
D-12459
PC107
PC10-6 TO5
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
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2N2891LL
O-205AA)
57mW/Â
-65ent
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ic 7468
Abstract: 7468 BLX41X blx41
Text: BLX41X MECHANICAL DATA BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO5 METAL PACKAGE Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)
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BLX41X
O205AA)
500mA
ic 7468
7468
BLX41X
blx41
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White Paint
Abstract: 3 pin IR sensor pin connection gold detector circuit free Reflective Optical Sensor high resolution HBCS-4999 HBCS-A998 HBCS-A999 TRansistor 1300 free HEDS-1200 HEDS1300
Text: Optical Reflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features Description • Focused Emitter and Detector in a Single Package • TO5 Package • Binning of Sensors by Photocurrent Ipr
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HEDS-1200
HEDS-1300
HEDS1300
5965-5947E
5966-1624E
White Paint
3 pin IR sensor pin connection
gold detector circuit free
Reflective Optical Sensor high resolution
HBCS-4999
HBCS-A998
HBCS-A999
TRansistor 1300 free
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