CL9020
Abstract: til99 photoconductor CL5M9M CLM610 CLM6000 CLM3000 CLE3309B CL8601M-X cl703 clairex CLT2190-X
Text: DISCONTINUED PRODUCTS Call for Pricing Ph: 972-265-4900, email: clairex@clairex.com These parts are no longer made by Clairex and must be regarded as one time purchases. All parts with an X suffix will be retested prior to shipment. PART NUMBER C-100-A-X C-100-B-X
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C-100-A-X
C-100-B-X
C-101-X
CL1073MA-X
CL1420M-2-X
CL1636-X
CL1641-X
CL1652P-1-X
CL1652P-X
CL1654P-X
CL9020
til99
photoconductor CL5M9M
CLM610
CLM6000
CLM3000
CLE3309B
CL8601M-X
cl703 clairex
CLT2190-X
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SMD PLCC-2 1210
Abstract: smd transistor nm OP505 circuit VCSEL lens array TRANSISTOR 935 SMD Plastic Encapsulate Diodes OP233 935 diode smd transistor A 935 opv302
Text: 1742-2012:QuarkCatalogTempNew 9/17/12 4:59 PM Page 1742 TEST & MEASUREMENT 20 Optical Components A subsidiary of TT electronics plc Phototransistors Vertical Cavity Surface Emitting Laser VCSEL RoHS OPV380 OPV302 OPV382 OPV332 OP802SL OP802WSL OP505 OP506
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OPV380
OPV302
OPV332
OPV382
OP802SL
OP802WSL
OP505
OP506
0P133
OP232
SMD PLCC-2 1210
smd transistor nm
OP505 circuit
VCSEL lens array
TRANSISTOR 935 SMD
Plastic Encapsulate Diodes
OP233
935 diode smd
transistor A 935
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Untitled
Abstract: No abstract text available
Text: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION
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940nm
TIL33B.
MIL-PRF-19500.
TIL31B
TIL31BHR2
TIL33B
TIL33BYR2
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TIL31B
Abstract: IR TIL31B TO46 package TIL33B
Text: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION
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940nm
TIL33B.
MIL-PRF-19500.
TIL31B
TIL31BHR2
TIL33B
TIL33BYR2
IR TIL31B
TO46 package
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SV5637-001
Abstract: VCSEL lens photodiode TO46 lens phototransistor lens photodiode phototransistor SV5637 TO-46 VCSEL phototransistor vcsel nm VCSEL 150 c 850 nm LED
Text: SV5637-001 VCSEL Components, Position Sensing, Domed Lens TO-46 Features l Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in your area. Please contact your regional
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SV5637-001
SD3421
SD3443
SV5637-001
VCSEL lens photodiode
TO46 lens phototransistor
lens photodiode phototransistor
SV5637
TO-46
VCSEL phototransistor
vcsel nm
VCSEL 150 c
850 nm LED
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HOA1395
Abstract: Infrared Phototransistor
Text: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often
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006494-6-EN
HOA1395
Infrared Phototransistor
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HOA1395
Abstract: dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470
Text: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often
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006494-5-EN
HOA1395
dual Phototransistor mouse
ACTIVE INFRARED MOTION DETECTOR
TO46 lens phototransistor
mouse Optical tachometer IR SENSOR wheel mouse
HOA2498
HOA0149
HLC2705
mouse photodetector
se3470
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GaAlAs detector
Abstract: No abstract text available
Text: GaAlAs 880 nm IREDs - General Characteristics FEATURES PRODUCT DESCRIPTION • Nine standard packages in hermetic and low cost epoxy • End and side radiating packages • Graded output • High efficiency GaAlAs 880 nm LPE process delivers twice the power of conventional GaAs 940 nm emitters
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Abstract: No abstract text available
Text: GaAs 940 nm Infrared Light Emitting Diodes Features Product Description • Three standard packages in hermetic and low cost epoxy • End radiating packages • High power GaAs, 940 nm LPE process This series of infrared emitting diodes IREDs consists of two
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OP830
Abstract: OP800 OP910 OPV302
Text: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.
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OPV302
850nm
OPV302
OP830
OP800
OP910
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OPV302
Abstract: OP830 angle position sensors VCSEL OP800 OP910 TO46 package
Text: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.
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OPV302
850nm
OPV302
OP830
angle position sensors
VCSEL
OP800
OP910
TO46 package
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Untitled
Abstract: No abstract text available
Text: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.
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OPV302
850nm
OPV302
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OP290
Abstract: OP295 OP291 OP292 OP294 OP296 OP297 OP298 OP299 T-46
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP296,
OP297,
OP299
OP295
OP291
OP292
OP294
OP296
OP297
OP298
OP299
T-46
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TO46 lens phototransistor
Abstract: LA12 SLT-50E1A SLT-50E1B SLT-50E1C
Text: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy
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SLT-50E1
SLT-50E1C
QF-84
TO46 lens phototransistor
LA12
SLT-50E1A
SLT-50E1B
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OP295
Abstract: OP290 OP298B OP297FAB OP298 OP296 OP297 OP299 T-46 OP291
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP296,
OP290A/OP593
OP295
OP298B
OP297FAB
OP298
OP296
OP297
OP299
T-46
OP291
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OP290
Abstract: OP295 OP290C OP291 OP292 OP294 OP296 OP297 OP298 OP299
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP296,
OP297,
OP299
OP295
OP290C
OP291
OP292
OP294
OP296
OP297
OP298
OP299
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OP297FAB
Abstract: OP295 OP290 op295b
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP296,
OP297,
OP299
OP297FAB
OP295
op295b
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OP295
Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP296,
OP290A/OP593
OP295
OP292
OP297AB
OP291
OP294
OP296
OP297
OP298
OP299
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OP295
Abstract: No abstract text available
Text: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an
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OP290
OP298
OP290,
OP291,
OP292,
OP294,
OP295,
OP290A/OP593
OP295/OP598
OP295
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Untitled
Abstract: No abstract text available
Text: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers
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940nm
MIL-PRF-19500.
100mA
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transistor 8606
Abstract: TO46 lens phototransistor OT410D "photo transistor" ic 8606 410D OT410 OT410T TO46 TO46 package
Text: NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed
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OT410
OT410D
OT410T
410D-6
410D-1
transistor 8606
TO46 lens phototransistor
"photo transistor"
ic 8606
410D
TO46
TO46 package
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IR LF 0038
Abstract: transistor tip 46 ir sensor 0038 TO46 lens phototransistor TIP 40c transistor QPD5223 LED 020 ir sensor LF 0038 sensor 452 TRANSISTOR tip 127
Text: [sQ PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS .190 4.83 .170(4.62) ~T REFERENCE SURFACE .230 (3.84) .220 (5.33) tv .0038 (.076) 'CATHODE .080 (20.3) MIN .230 (5.84) .210(5.33) REFERENCE SURFACE'S^ .800 (20.3) MIN •ANODE 0.031 (0.76)
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OCR Scan
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O-46/TO-18
QPD5223
ST2170
QPD5223
IR LF 0038
transistor tip 46
ir sensor 0038
TO46 lens phototransistor
TIP 40c transistor
LED 020 ir sensor
LF 0038
sensor 452
TRANSISTOR tip 127
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TIP 40c transistor
Abstract: transistor tip 46 Infrared phototransistor TO18 em 483
Text: [sQ PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS . 1 9 0 4 . 83 .170 ( 4.521 .190(4.83) .170(4.62) I REFERENCE SURFACE .230 (3.84) .220 (5.33) REFERENCE SURFACES^ .230 (5.84) .210(5.33) -L .080 (20.3) MIN 0.031 (0.76) 'EM ITTER
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OCR Scan
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O-46/TO-18
QPD5223
ST2170
TIP 40c transistor
transistor tip 46
Infrared phototransistor TO18
em 483
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IR LF 0038
Abstract: No abstract text available
Text: PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS I REFERENCE SURFACE v .230 3.84 .220 (5.33) REFERENCE SURFACE'S^ .0038 (.076) "C ATH O D E .080 (20.3) MIN .800 (20.3) MIN •ANODE COLLECTOR .05 (1.27) -J 100 (2.54) NOM NOM .223(5.72)
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O-46/TO-18
QPD5223
ST2170
IR LF 0038
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