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    TO220AB PACKAGE WHICH IS GATE Search Results

    TO220AB PACKAGE WHICH IS GATE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO220AB PACKAGE WHICH IS GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6508G

    Abstract: 2N6508TG
    Text: 2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features •ăGlass Passivated Junctions with Center Gate Fire for Greater


    Original     		PDF 2N6504 O-220AB 2N650xG 2N6504/D 2N6508G 2N6508TG

    2N6509G

    Abstract: 2N6508G 2N6507 2N6505G 2N6505T 2N6508 2N6509 2N6504 2N6504G 2N6505
    Text: 2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features •ăGlass Passivated Junctions with Center Gate Fire for Greater


    Original     		PDF 2N6504 O-220AB 2N650xG 2N6504/D 2N6509G 2N6508G 2N6507 2N6505G 2N6505T 2N6508 2N6509 2N6504G 2N6505

    TN2540-800G

    Abstract: 7478 j k
    Text: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms


    Original     		PDF TN2540, TXN625 TYN625, TYN825 O-220AB UL1557 E81734) TXN625RG TN2540-x00G) TN2540-800G 7478 j k

    2N6400G

    Abstract: 2N6405G 2N6403G 2N6400 2N6401 2N6401G 2N6402 2N6402G 2N6403 2N6404
    Text: 2N6400 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.


    Original     		PDF 2N6400 O-220AB 2N6400/D 2N6400G 2N6405G 2N6403G 2N6401 2N6401G 2N6402 2N6402G 2N6403 2N6404

    TYN825

    Abstract: TYN825RG TO-220AB footprint TYN1225 TXN625 TN2540-800G tyn1225rg TYN625RG TYN625 scr tyn825
    Text: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms


    Original     		PDF TN2540, TXN625 TYN625, TYN825, TYN1225 O-220AB UL1557 E81734) TXN625RG TYN825 TYN825RG TO-220AB footprint TYN1225 TN2540-800G tyn1225rg TYN625RG TYN625 scr tyn825

    TYN1225

    Abstract: scr tyn825 txn625 tyn825 Tyn625
    Text: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms


    Original     		PDF TN2540, TXN625 TYN625, TYN825, TYN1225 O-220AB UL1557 E81734) O-220AB TYNx25RG) TYN1225 scr tyn825 txn625 tyn825 Tyn625

    2N6399G

    Abstract: 2n6397 scr SCR 2N6399 2N6397G 2N6394 2N6394G 2N6395 2N6395G 2N6397 2N6399
    Text: 2N6394 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features http://onsemi.com •ăGlass Passivated Junctions with Center Gate Geometry for Greater


    Original     		PDF 2N6394 2N6394/D 2N6399G 2n6397 scr SCR 2N6399 2N6397G 2N6394G 2N6395 2N6395G 2N6397 2N6399

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BT137-600E 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This


    Original     		PDF BT137-600E

    bt137 600e 02

    Abstract: No abstract text available
    Text: TO -2 20A B BT137-600E 4Q Triac 2 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This


    Original     		PDF BT137-600E bt137 600e 02

    BT137-600E

    Abstract: No abstract text available
    Text: TO -2 20A B BT137-600E 4Q Triac 26 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This


    Original     		PDF BT137-600E BT137-600E

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BT137-600 4Q Triac 2 September 2013 Product data sheet 1. Features and benefits • • • • High blocking voltage capability Less sensitive gate for improved noise immunity Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants


    Original     		PDF BT137-600

    Triac T435

    Abstract: T220AB T410 ISOWATT weight sot194 Triac T435 80 T435 70 T435 Triac 3a 600v SOT-194
    Text: T410 T435 HIGH PERFORMANCE TRIACS . . FEATURES ITRMS = 4 A VDRM = 400 V to 800 V SENSITIVE GATE : IGT ≤ 10 mA HIGH COMMUTATION : dI/dt c > 3.5 A/ms A1 A2 G A1 A2 DESCRIPTION The T410 / T435 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology.


    Original     		PDF O220AB, OT194 ISOWATT220AB O220AB T220AB Triac T435 T220AB T410 ISOWATT weight sot194 Triac T435 80 T435 70 T435 Triac 3a 600v SOT-194

    Triac T405

    Abstract: sot194 T405
    Text: T405 HIGH PERFORMANCE TRIACS . . FEATURES ITRMS = 4 A VDRM = 400 V to 600 V SENSITIVE GATE : IGT ≤ 5 mA LOW IH ≤ 10 mA A1 A2 G DESCRIPTION The T405 high voltage TRIAC Families are high performance planar diffused PNPN devices glass passivated technology.


    Original     		PDF O220AB, OT194 ISOWATT220AB O220AB ISOWATT220AB Triac T405 sot194 T405

    TRIAC BTA 20 600 BW

    Abstract: BTA 800 ST
    Text: BTA08, BTB08 T810, T835 Snubberless , logic level and standard 8 A Triacs Features A2 • On-state rms current, IT RMS 8 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V ■ G A1 Triggering gate current, IGT (Q1) 5 to 50 mA Description A1 A2


    Original     		PDF BTA08, BTB08 BTB08 TRIAC BTA 20 600 BW BTA 800 ST

    5 L 0380 R

    Abstract: No abstract text available
    Text: MCR218−2, MCR218−4, MCR218−6 Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed.


    Original     		PDF MCR218â O-220 MCR218/D 5 L 0380 R

    SCR TN 22 1500

    Abstract: TN22 TN22-1500T P0130AA TN22-1500 TN22-1500B-TR TN22-1500H SCR full wave bridge rectifier HIGH ENERGY IGNITION CIRCUIT fluorescent lamp starter
    Text: TN22 Fluorescent tube lamp starter SCR Features 1 2, TAB • High clamping voltage structure 1200 to 1500 V ■ Low gate triggering current for direct drive from line (< 1.5 mA) ■ High holding current (> 175 mA), ensuring high striking energy 3 TAB TAB


    Original     		PDF TN22-1500H O-220AB TN22-1500T SCR TN 22 1500 TN22 TN22-1500T P0130AA TN22-1500 TN22-1500B-TR TN22-1500H SCR full wave bridge rectifier HIGH ENERGY IGNITION CIRCUIT fluorescent lamp starter

    TRIAC BTB 16 600 BW

    Abstract: BTA08 ST triacs bt 16 600v TRIAC BTA 28 TRIAC BTB08 600 TRIAC BTB08 specifications triac BT 16 rating 10-35 l2 BTA08 600 ST TRIAC BTB 16 400 BW
    Text: BTA08, BTB08 T810, T835 Snubberless , logic level and standard 8 A Triacs Features A2 • On-state rms current, IT RMS 8 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V ■ G A1 Triggering gate current, IGT (Q1) 5 to 50 mA Description A1 A2


    Original     		PDF BTA08, BTB08 BTB08 TRIAC BTB 16 600 BW BTA08 ST triacs bt 16 600v TRIAC BTA 28 TRIAC BTB08 600 TRIAC BTB08 specifications triac BT 16 rating 10-35 l2 BTA08 600 ST TRIAC BTB 16 400 BW

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BT139-600E 4Q Triac 6 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 TO-220AB plastic package intended for use in applications requiring high bidirectional transient and


    Original     		PDF BT139-600E O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BT138-800E 4Q Triac 30 August 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 TO-220AB plastic package intended for use in general purpose bidirectional switching and phase control


    Original     		PDF BT138-800E O-220AB)

    tyn08

    Abstract: SCR 600V, 8A, 15mA Igt SCR TYN Series gk 147 SCR TYN 16 A JESD97 TN805 TN815 TS820 K 460
    Text: TN8, TS8 and TYNx08 Series 8A SCRS SENSITIVE & STANDARD Table 1: Main Features A Symbol Value Unit IT RMS 8 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA G K A A K A G DESCRIPTION Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR


    Original     		PDF TYNx08 tyn08 SCR 600V, 8A, 15mA Igt SCR TYN Series gk 147 SCR TYN 16 A JESD97 TN805 TN815 TS820 K 460

    Untitled

    Abstract: No abstract text available
    Text: TN22 Fluorescent tube lamp starter SCR Features 1 2, TAB • High clamping voltage structure 1200 to 1500 V 3 ■ Low gate triggering current for direct drive from line (< 1.5 mA) ■ High holding current (> 175 mA), ensuring high striking energy TAB TAB


    Original     		PDF TN22-1500H O-220AB TN22-1500T

    TS820600T

    Abstract: TYN608RG TS820-600B TS820-600BTR TS8206 TYN608 TS820-600T TS820-600 TYN608 scr ts820600b
    Text: TN805, TN815 TS820, TYN608 Sensitive and standard 8 A SCRs Features A A • On-state rms current, IT RMS 8 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 and 800 V ■ K G K Triggering gate current, IGT 0.2 to 15 mA G IPAK TS820-600H A Description


    Original     		PDF TN805, TN815 TS820, TYN608 TS820-6d TS820600T TYN608RG TS820-600B TS820-600BTR TS8206 TYN608 TS820-600T TS820-600 TYN608 scr ts820600b

    Untitled

    Abstract: No abstract text available
    Text: TO -2 20A B BT138-600E 4Q Triac 30 August 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 TO-220AB plastic package intended for use in general purpose bidirectional switching and phase control


    Original     		PDF BT138-600E O-220AB)

    bt138

    Abstract: No abstract text available
    Text: BT138-800E 4Q Triac 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 TO-220AB plastic package intended for use in general purpose bidirectional switching and phase control


    Original     		PDF BT138-800E O-220AB) bt138