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    TO202 PACKAGE Search Results

    TO202 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO202 PACKAGE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-202 Package Intersil 2 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE Original PDF
    TO-202 Package Intersil 3 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE Original PDF

    TO202 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Aluminum alloy 8053

    Abstract: TO202 package TO202 thermal resistance NTE406
    Text: NTE406 Hardware Heat Sink for TO202 Type Package Description: The NTE406 is a compact, slide-on heat sink with device catch for use with TO202 type packages. Specifications: Finish . . . . . . . . . . . . . . . . . . Pre-Black Anodize Material . . . . . . . . . . . . . . . . . . . Aluminum Alloy


    Original     		PDF NTE406 NTE406 Aluminum alloy 8053 TO202 package TO202 thermal resistance

    NTE5457

    Abstract: NTE5455 NTE5452 NTE5456 NTE5453 NTE5454 NTE5458
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate, TO202 Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse−blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 NTE5453 NTE5454

    SCR TRIGGER PULSE

    Abstract: SCR TRIGGER PULSE circuit SCR PNPN General electric SCR TO202 package FS0802 scr 209
    Text: FS0802.E/F SENSITIVE GATE SCR TO202-1 E On-State Current Gate Trigger Current 8 Amp < 200 µA TO202-3 (F) Off-State Voltage 200 V ÷ 600 V A A These series of Silicon Controlled R ectifier use a high performance PNPN technology. K K A G A G These parts are intended for general


    Original     		PDF FS0802 O202-1 O202-3 SCR TRIGGER PULSE SCR TRIGGER PULSE circuit SCR PNPN General electric SCR TO202 package scr 209

    T0409

    Abstract: No abstract text available
    Text: FT04.E/F SENSITIVE TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G


    Original     		PDF O202-1 O202-3 T0409

    triac to-202-3

    Abstract: triac mw 134
    Text: FT04.E/F STANDARD TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G G These parts are intended for general purpose


    Original     		PDF O202-1 O202-3 triac to-202-3 triac mw 134

    rgk 20/2

    Abstract: triac to-202-3 Fagor triacs FT04 triac scr circuit scr 209
    Text: FT04.E/F STANDARD TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 This series of TRIACs uses a high performance PNPN technology. MT1 MT2 G MT1 MT2 G These parts are intended for general


    Original     		PDF O202-1 O202-3 rgk 20/2 triac to-202-3 Fagor triacs FT04 triac scr circuit scr 209

    fs04

    Abstract: scr fs04 1015i2 scr 209 TL 413 K
    Text: FS04.E/F SENSITIVE GATE SCR TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G G These parts are intended for general purpose


    Original     		PDF O202-1 O202-3 fs04 scr fs04 1015i2 scr 209 TL 413 K

    FT04E

    Abstract: FT04
    Text: FT04.E/F LOGIC LEVEL TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 This series of TRIACs uses a high performance PNPN technology. MT1 MT2 G MT1 MT2 G These parts are intended for general


    Original     		PDF O202-1 O202-3 FT04E FT04

    FS04

    Abstract: scr 209
    Text: FS04.E/F SENSITIVE GATE SCR TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp >15µA < 200 µA Off-State Voltage 200 V ÷ 600 V A A These series of Silicon Controlled Rectifier use a high performance PNPN technology. K K A A G G These parts are intended for general purpose


    Original     		PDF O202-1 O202-3 FS04 scr 209

    Untitled

    Abstract: No abstract text available
    Text: FS0802.E/F SENSITIVE GATE SCR TO202-1 E On-State Current Gate Trigger Current 8 Amp < 200 µA TO202-3 (F) Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled R ectifier use a high performance PNPN technology. MT1 MT2 MT1 G MT2 G These parts are intended for general


    Original     		PDF FS0802 O202-1 O202-3

    Untitled

    Abstract: No abstract text available
    Text: FT04.E/F LOGIC LEVEL TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 This series of TRIACs uses a high performance PNPN technology. MT1 MT2 G MT1 MT2 G These parts are intended for general


    Original     		PDF O202-1 O202-3

    FT04E

    Abstract: triac to-202-3
    Text: FT04.E/F LOGIC LEVEL TRIAC TO202-3 F TO202-1 (E) On-State Current Gate Trigger Current 4 Amp < 10 mA MT2 Off-State Voltage 200 V ÷ 800 V MT1 MT2 G MT1 MT2 G This series of TRIACs uses a high perfor mance PNPN technology. These parts are intended for general


    Original     		PDF O202-1 O202-3 FT04E triac to-202-3

    scr 209

    Abstract: No abstract text available
    Text: FS0802.E/F SENSITIVE GATE SCR TO202-1 E On-State Current Gate Trigger Current 8 Amp < 200 µA TO202-3 (F) Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled R ectifier use a high performance PNPN technology. MT1 MT2 MT1 G MT2 G These parts are intended for general


    Original     		PDF FS0802 O202-1 O202-3 scr 209

    Untitled

    Abstract: No abstract text available
    Text: FT04.E/F STANDARD TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT2 MT1 MT2 G MT1 MT2 This series of TRIACs uses a high p e r f o r m a n c e P N P N t e c h n o l o g y. G These par ts are intended for general


    Original     		PDF O202-1 O202-3

    NTE269

    Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
    Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-


    Original     		PDF NTE268 NTE269 100MHz NTE269 TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b

    TO247 package

    Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
    Text: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise


    Original     		PDF 6273B/PB O218/TO247 6273B 6273PB 100mm 150mm EAD063NN EAD063TH CLIP-04 EAN025BH TO247 package TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17

    NTE5457

    Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5456 NTE5453 NTE5454 NTE5455 SCR NTE5457

    NTE211

    Abstract: NTE210
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE211 NTE210

    NTE210

    Abstract: NTE211
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE210 NTE211

    NTE5457

    Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
    Text: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be


    Original     		PDF NTE5452 NTE5458 NTE5458 NTE5452 NTE5453 NTE5457 NTE5455 NTE5456 SCR NTE5457 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive

    nte268

    Abstract: No abstract text available
    Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.


    Original     		PDF NTE268 NTE269 NTE268 NTE269 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Z04 4 A Triacs Main features TO202-3 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 3 to 25 mA Order codes Part Number Marking Z04xxyF(1) Z04xxyF(1) 1. xx = sensitivity, y = voltage Description A2 The Z04 series is suitable for general purpose AC


    Original     		PDF O202-3 Z04xxyF Oct-2001 13-Feb-2006 O202-3 31-Mar-2006

    darlington complementary power amplifier

    Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
    Text: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.


    Original     		PDF NTE268 NTE269 100MHz darlington complementary power amplifier PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington

    X0405MF 1AA2

    Abstract: No abstract text available
    Text: X04 Series 4A SCRS TO202-3 X04xxF MAIN FEATURES: Symbol Value Unit IT(RMS) 4 A V DRM/VRRM 600 and 800 V IGT 50 to 200 µA DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as


    Original     		PDF O202-3 X04xxF) X0405MF 1AA2