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    TO18 PACKAGE Search Results

    TO18 PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TO18 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC-LQNP

    Abstract: TO18-4
    Text: iC-LQNP TO18-4L/F PACKAGE SPECIFICATION Rev A1, Page 1/1 ORDERING INFORMATION Type Package Options Order Designation iC-LQNP TO18-4L lens iC-LQNP TO18-4L iC-LQNP TO18-4F flat window iC-LQNP TO18-4F optoLGA and optoBGATM packages on request. PIN CONFIGURATION


    Original     		PDF O18-4L/F O18-4L O18-4F D-55294 IC-LQNP TO18-4

    IR photodiode sensor

    Abstract: PSS1-7-TO18 PIN photodiode 500 nm
    Text: DATA SHEET PSS1-7-TO18 SILICON PHOTODIODE TYPE PSS1-7-TO18 PSS1-7-TO18 is a PIN Silicon PHOTODIODE with an Active Area 1.0 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically


    Original     		PDF PSS1-7-TO18 PSS1-7-TO18 IR photodiode sensor PIN photodiode 500 nm

    TO18 package

    Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
    Text: NTE412 Hardware Heat Sink for TO18 Type Package Description: The NTE412 is a very low cost 1-peice heat sink for plastic “D”, plastic TO18, and metal can TO18 type transistors. Unit presses onto case requiring no special assembly tool and can be installed after as-


    Original     		PDF NTE412 NTE412 TO18 package Aluminum alloy 8053 to18 case ALLOY 52 to18 thermal resistance case heat sink

    PSS1515Q-6-TO18

    Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
    Text: DATA SHEET PSS1515Q-6-TO18 SILICON PHOTODIODE TYPE PSS1515Q-6-TO18 PSS1515Q-6-TO18 is a quadrant silicon photodiode with a very small active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently


    Original     		PDF PSS1515Q-6-TO18 PSS1515Q-6-TO18 PSS1515Q-6-C. PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP

    Infrared phototransistor TO18

    Abstract: phototransistor visible light BOD100LH
    Text: This component is RoHS compliant BOD100LH TO18 Plastic Phototransistor Leaded Housing Pb DESCRIPTION The BOD100LH is a silicon phototransistor in an Infrared transparent black TO18 package housed in a clip-in Polycarbonate housing with 750mm leads FEATURES


    Original     		PDF BOD100LH BOD100LH 750mm /-10mm 26AWG UL1061 880nm. Infrared phototransistor TO18 phototransistor visible light

    BOD100LH

    Abstract: No abstract text available
    Text: BOD100LH TO18 Plastic Phototransistor Leaded Housing DESCRIPTION The BOD100LH is a silicon phototransistor in an Infrared transparent black TO18 package housed in a clip-in Polycarbonate housing with 750mm leads FEATURES • Min/max light current selection.


    Original     		PDF BOD100LH BOD100LH 750mm /-10mm 26AWG UL1061 880nm.

    VN10K-TO18

    Abstract: No abstract text available
    Text: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE


    Original     		PDF VN10K-TO18 300ms VN10K-TO18

    DUV-HL18M

    Abstract: No abstract text available
    Text: rev.2.0 07.05.15 DUV-HL18M • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 24 deg. Description DUV-HL18M is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a


    Original     		PDF DUV-HL18M DUV-HL18M

    Untitled

    Abstract: No abstract text available
    Text: rev.2.0 07.05.15 DUV-HL18W • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 40 deg. Description DUV-HL18W is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a


    Original     		PDF DUV-HL18W DUV-HL18W

    Untitled

    Abstract: No abstract text available
    Text: rev.2.0 07.05.15 DUV-HL46N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL46N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a


    Original     		PDF DUV-HL46N DUV-HL46N

    Untitled

    Abstract: No abstract text available
    Text: rev.2.0 07.05.15 DUV-FW18 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Flat SiO2 window Beam angle 113 deg. Description DUV-FW18 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a flat quartz


    Original     		PDF DUV-FW18 DUV-FW18

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252

    nte3032

    Abstract: Infrared phototransistor TO18
    Text: NTE3032 Phototransistor Detector NPN–Si, Visible & IR Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications


    Original     		PDF NTE3032 NTE3032 Infrared phototransistor TO18

    Untitled

    Abstract: No abstract text available
    Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them


    Original     		PDF TSTS750. D-74025 08-Apr-04

    2N2369A

    Abstract: No abstract text available
    Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N2369A 200mA 360mW O-206AA) 2N2369A

    Untitled

    Abstract: No abstract text available
    Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO


    Original     		PDF 2N2369A 200mA 360mW 06mW/Â 80mW/Â O-206AA)

    tsts 7503

    Abstract: No abstract text available
    Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them


    Original     		PDF TSTS750. D-74025 11-May-04 tsts 7503

    CV7477

    Abstract: No abstract text available
    Text: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF CV7477 O206AA) 2-Aug-02 CV7477

    Untitled

    Abstract: No abstract text available
    Text: BFY74 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF BFY74 O206AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF CV7477 O206AA) 16-Jul-02

    2N2501

    Abstract: No abstract text available
    Text: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF 2N2501 O206AA) 1/10m 16-Jul-02 2N2501

    2N995

    Abstract: No abstract text available
    Text: 2N995 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF 2N995 O206AA) 0/20m 19-Jun-02 2N995

    2N2501

    Abstract: No abstract text available
    Text: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF 2N2501 O206AA) 1/10m 2-Aug-02 2N2501

    2N722

    Abstract: No abstract text available
    Text: 2N722 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products


    Original     		PDF 2N722 O206AA) 19-Jun-02 2N722