IC-LQNP
Abstract: TO18-4
Text: iC-LQNP TO18-4L/F PACKAGE SPECIFICATION Rev A1, Page 1/1 ORDERING INFORMATION Type Package Options Order Designation iC-LQNP TO18-4L lens iC-LQNP TO18-4L iC-LQNP TO18-4F flat window iC-LQNP TO18-4F optoLGA and optoBGATM packages on request. PIN CONFIGURATION
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O18-4L/F
O18-4L
O18-4F
D-55294
IC-LQNP
TO18-4
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IR photodiode sensor
Abstract: PSS1-7-TO18 PIN photodiode 500 nm
Text: DATA SHEET PSS1-7-TO18 SILICON PHOTODIODE TYPE PSS1-7-TO18 PSS1-7-TO18 is a PIN Silicon PHOTODIODE with an Active Area 1.0 mm2. It combines excellent blue light sensitivity with more than average Near IR response. This product is packaged in a hermetically
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PSS1-7-TO18
PSS1-7-TO18
IR photodiode sensor
PIN photodiode 500 nm
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TO18 package
Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
Text: NTE412 Hardware Heat Sink for TO18 Type Package Description: The NTE412 is a very low cost 1-peice heat sink for plastic “D”, plastic TO18, and metal can TO18 type transistors. Unit presses onto case requiring no special assembly tool and can be installed after as-
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NTE412
NTE412
TO18 package
Aluminum alloy 8053
to18 case
ALLOY 52
to18
thermal resistance case heat sink
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PSS1515Q-6-TO18
Abstract: PSS1515Q-6-C Silicon Photodiode Chip Photodiode, nm NEP
Text: DATA SHEET PSS1515Q-6-TO18 SILICON PHOTODIODE TYPE PSS1515Q-6-TO18 PSS1515Q-6-TO18 is a quadrant silicon photodiode with a very small active area of 0.3 mm2 for each quadrant. Quadrant photodiodes find applications in electro-mechanical apparatus and are frequently
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PSS1515Q-6-TO18
PSS1515Q-6-TO18
PSS1515Q-6-C.
PSS1515Q-6-C
Silicon Photodiode Chip
Photodiode, nm NEP
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Infrared phototransistor TO18
Abstract: phototransistor visible light BOD100LH
Text: This component is RoHS compliant BOD100LH TO18 Plastic Phototransistor Leaded Housing Pb DESCRIPTION The BOD100LH is a silicon phototransistor in an Infrared transparent black TO18 package housed in a clip-in Polycarbonate housing with 750mm leads FEATURES
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BOD100LH
BOD100LH
750mm
/-10mm
26AWG
UL1061
880nm.
Infrared phototransistor TO18
phototransistor visible light
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BOD100LH
Abstract: No abstract text available
Text: BOD100LH TO18 Plastic Phototransistor Leaded Housing DESCRIPTION The BOD100LH is a silicon phototransistor in an Infrared transparent black TO18 package housed in a clip-in Polycarbonate housing with 750mm leads FEATURES • Min/max light current selection.
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BOD100LH
BOD100LH
750mm
/-10mm
26AWG
UL1061
880nm.
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VN10K-TO18
Abstract: No abstract text available
Text: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE
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VN10K-TO18
300ms
VN10K-TO18
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DUV-HL18M
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL18M • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 24 deg. Description DUV-HL18M is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL18M
DUV-HL18M
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL18W • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 40 deg. Description DUV-HL18W is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL18W
DUV-HL18W
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-HL46N • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Hemispherical SiO2 lens Beam angle 6 deg. Description DUV-HL46N is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a
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DUV-HL46N
DUV-HL46N
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Untitled
Abstract: No abstract text available
Text: rev.2.0 07.05.15 DUV-FW18 • • • • • Deep Ultraviolet Light Emission Source 265, 280, 310, 325, 340 nm TO18 metal can Flat SiO2 window Beam angle 113 deg. Description DUV-FW18 is a series of AlGaN based single emitter DEEP-UV LEDs in a hermetically sealed TO18 package, utilizing a flat quartz
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DUV-FW18
DUV-FW18
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2N3907
Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)
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2N2604-05
2N2907A-T46
2N3485-86
2N3508-09
2N5581-82
BC182-TO46
BC212-TO46
BFY74-77
BSV91
BSX20-21
2N3907
2c415
2N3409
BSV81
BC107-109
2N3209
2N3680
2N3036L
2N6534
2N5252
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nte3032
Abstract: Infrared phototransistor TO18
Text: NTE3032 Phototransistor Detector NPN–Si, Visible & IR Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
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NTE3032
NTE3032
Infrared phototransistor TO18
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Untitled
Abstract: No abstract text available
Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them
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TSTS750.
D-74025
08-Apr-04
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2N2369A
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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2N2369A
200mA
360mW
O-206AA)
2N2369A
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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2N2369A
200mA
360mW
06mW/Â
80mW/Â
O-206AA)
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tsts 7503
Abstract: No abstract text available
Text: TSTS750. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their flat glass windows make them
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TSTS750.
D-74025
11-May-04
tsts 7503
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CV7477
Abstract: No abstract text available
Text: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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CV7477
O206AA)
2-Aug-02
CV7477
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Untitled
Abstract: No abstract text available
Text: BFY74 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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BFY74
O206AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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CV7477
O206AA)
16-Jul-02
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2N2501
Abstract: No abstract text available
Text: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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2N2501
O206AA)
1/10m
16-Jul-02
2N2501
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2N995
Abstract: No abstract text available
Text: 2N995 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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2N995
O206AA)
0/20m
19-Jun-02
2N995
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2N2501
Abstract: No abstract text available
Text: 2N2501 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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2N2501
O206AA)
1/10m
2-Aug-02
2N2501
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2N722
Abstract: No abstract text available
Text: 2N722 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products
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2N722
O206AA)
19-Jun-02
2N722
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