Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO1130NM Search Results

    TO1130NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections


    OCR Scan     		PDF BP103 420nm to1130nm BP103 EM0t59a PCE250=

    BPY62

    Abstract: No abstract text available
    Text: BPY62 Silicon NPN Phototransistor Characteristics TA=25°C, X=950 nm Parameter APPLICATIO NS • Photointerrupters • Industrial electronics • For control and drive circuits DESCRIPTIO N Unit ^Smax 850 nm Spectral Sensitivity Range X 420 to 1130 Radiant Sensitive Area


    OCR Scan     		PDF BPY62 1000lx, BPY62