P4 diode
Abstract: RHS 25 105 OHMS J 300 Amps SCR 18XX00 R7S0 scr control circuit for welding Z7A marking TT 80 SCR MODULE scr 209 PEC 816
Text: POWEREX INC 1SE » • 72T4b51 0003^07 T ■ f O M Æ V K G i r POW-R-BRIK Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 P h d S B C O tltfO l
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72T4b51
BP107
MAX/10
P4 diode
RHS 25 105 OHMS J
300 Amps SCR
18XX00
R7S0
scr control circuit for welding
Z7A marking
TT 80 SCR MODULE
scr 209
PEC 816
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47AC
Abstract: IRGPC30UD2 MJ10Q
Text: PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC30UD2
O-247AC.
O-247AD)
O-247AC
47AC
IRGPC30UD2
MJ10Q
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BFC50
Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR
Text: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69
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BFC50
BFC50
BY 126 DIODE DYNAMIC RESISTANCE
1428-TR
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IRGPC30UD2
Abstract: No abstract text available
Text: PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC30UD2
O-247AC.
O-247AD)
O-247AC
IRGPC30UD2
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0760F
Abstract: APT14050JVFR 115a 0992
Text: APT14050JVFR 23A 0.500Ω Ω 1400V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT14050JVFR
OT-227
0760F
APT14050JVFR
115a 0992
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APT14050JVFR
Abstract: No abstract text available
Text: APT14050JVFR 23A 0.500Ω Ω 1400V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT14050JVFR
OT-227
MIL-STD-750
APT14050JVFR
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APT55M85JFLL
Abstract: No abstract text available
Text: APT55M85JFLL 550V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT55M85JFLL
OT-227
APT55M85JFLL
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fast diode SOT-227
Abstract: No abstract text available
Text: APT8024JFLL 800V 29A 0.240W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT8024JFLL
OT-227
fast diode SOT-227
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25C2240
Abstract: APT5010JFLL
Text: APT5010JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
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APT5010JFLL
OT-227
25C2240
APT5010JFLL
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3180 diode
Abstract: No abstract text available
Text: APT4020BVR 400V 23A 0.200Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT4020BVR
O-247
O-247
3180 diode
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Untitled
Abstract: No abstract text available
Text: POUEREX INC T1D D • 7 5 T 4 tiS l D D D lf l n 2 ■ Reverse Conducting Thyristors IT W to JW Tc-65°C Note 2 (Amps) 60 <cb81 m C lT‘t/lmt I tsm / I r s m (Amps x 10*) @ &3 ms SO Hz 60 Hz (4>sec x Toy 1.09 1.09 L2 60 0 65*0 1B0 I 77*C 2.7 3 e o & e i'c
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Tc-65Â
MAX/10
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tf8050
Abstract: APT10M19BVFR
Text: APT10M19BVFR 100V POWER MOS V 75A 0.019Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M19BVFR
O-247
O-247
tf8050
APT10M19BVFR
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t 935
Abstract: 1r 10e T935
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. SEATING a FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A <£b 40 e 01 h MAX MILLIMETERS
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1N6264
1N6264
940nm
ST1332
ST1604
t 935
1r 10e
T935
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ST1332
Abstract: A 3202 DIODE
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS ' The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING PLANE FEATURES ST1332 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS MAX, MIN. .255
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CQX14,
CQX16
CQX14/16
940nm
ST1332
ST1604
100mA1
CQX16
ST1332
A 3202 DIODE
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Untitled
Abstract: No abstract text available
Text: 15E D POWEREX INC • 7ST4bSl QQG3bSS ñ E D _ E D _ ED41 _ Pow erex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 4 1 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 ■ ■ T -Ä S -Ä 3 13
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BP107,
Amperes/100-2400
ED430816
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free VDSS RDS on max ID 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
AN1001)
O-220AB
IRFB23N15D
IRFS23N15D
O-262
IRFSL23N15D
O-220AB
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APT10M19BVR
Abstract: No abstract text available
Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT10M19BVR
O-247
O-247
APT10M19BVR
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Untitled
Abstract: No abstract text available
Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT10M19BVR
O-247
O-247
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IRF Power MOSFET code marking
Abstract: AN1001 AN-994 IRFB23N15D IRFS23N15D IRFSL23N15D
Text: PD - 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free VDSS RDS on max ID 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFB23N15DPbF
IRFS23N15DPbF
IRFSL23N15DPbF
AN1001)
O-220AB
IRFB23N15D
IRFS23N15D
O-262
IRFSL23N15D
O-220AB
IRF Power MOSFET code marking
AN1001
AN-994
IRFB23N15D
IRFS23N15D
IRFSL23N15D
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PDF
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APT10M19BVR
Abstract: No abstract text available
Text: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
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APT10M19BVR
O-247
O-247
APT10M19BVR
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st12
Abstract: CQX14 CQX16 ST1332
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255
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CQX14,
CQX16
ST1332
CQX14/16
940nm
ST1271
ST1276
ST1272
ST1275
ST1273
st12
CQX14
CQX16
ST1332
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6265 PACKAGE DIMENSIONS The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING ST1331 SYMBOL A èb ¿Di e • Good optical to mechanical alignment INCHES MIN. MAX. .155 .016 .021 .209 .230 .180 .187
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1N6265
1N6265
940nm
ST1331
4bbfl51
ST1002
ST1003
ST1005
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PDF
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Untitled
Abstract: No abstract text available
Text: [*13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES • Good optical to mechanical alignment SYMBOL INCHES MIN. MILLIMETERS MAX. A MIN.
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CQX14,
CQX16
CQX14/16
940nm
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PDF
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Untitled
Abstract: No abstract text available
Text: APT10M19SVR 75A 0.019Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M19SVR
Conti632)
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