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    TO-92 1A,,1W TRANSISTOR Search Results

    TO-92 1A,,1W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 1A,,1W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC635

    Abstract: TBC635
    Text: BC635 Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application. TO-92 Plastic Package


    Original     		PDF BC635 BC635 TBC635

    IC 358

    Abstract: TBC635 "Bipolar Transistors" TBC63
    Text: TBC635 Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A Up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application. TO-92 Plastic Package


    Original     		PDF TBC635 IC 358 TBC635 "Bipolar Transistors" TBC63

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    230v 5v 1A 5W schematic

    Abstract: L2 diode opto pc817 AP4313 APT13003 PC817 electrolytic capacitor 470uf AP3700 OPTO-PC817 EE16 pc40
    Text: BCD Demo Board Series DB-AP3700-A -Low Cost Solution of 5W Charger with AP3700 Ser No: V1.1-001 2006-11-17 5V/1A Demo Board with AP3700 + AP4313 +APT13003 ‰ Technical Specification ‰ Board Schematic ‰ Board PCB ‰ Bill of Components ‰ Transformer Spec


    Original     		PDF DB-AP3700-A AP3700 AP4313 APT13003 85Vac 264Vac SB240 230v 5v 1A 5W schematic L2 diode opto pc817 AP4313 APT13003 PC817 electrolytic capacitor 470uf AP3700 OPTO-PC817 EE16 pc40

    PSOP-36

    Abstract: AD199x 12v 40W mono amplifier 12v 4 channel AUDIO power AMPLIFIER AD1990 AD1992 AD1994 AD1996 5w stereo amplifier chip AD1994ACPZ
    Text: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω


    Original     		PDF AD1990/AD1992/AD1994/AD1996 AD199x CP-64 PSOP-36 AD199x PR05380-0-1/05 PSOP-36 12v 40W mono amplifier 12v 4 channel AUDIO power AMPLIFIER AD1990 AD1992 AD1994 AD1996 5w stereo amplifier chip AD1994ACPZ

    AD1990

    Abstract: AD1992 AD1994 AD1996 AD1994ACPZ 12v 40W stereo amplifier resistor 10K 5w 5v 5W mono AMPLIFIER
    Text: Class-D Audio Power Amplifier AD1990/AD1992/AD1994/AD1996 Preliminary Technical Data GENERAL DESCRIPTION Integrated Stereo Modulator & Power Stage 0.005% THD+N 101.5dB Dynamic Range PSRR > 65 dB RDS-ON < 0.3 Ω per transistor Efficiency > 80% @ 5W/6 Ω


    Original     		PDF AD1990/AD1992/AD1994/AD1996 AD199x CP-64 PSOP-36 AD199x PR05380-0-1/05 AD1990 AD1992 AD1994 AD1996 AD1994ACPZ 12v 40W stereo amplifier resistor 10K 5w 5v 5W mono AMPLIFIER

    2SD1966

    Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
    Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5


    OCR Scan     		PDF 2SA785 2SA790 2SA790M 2SA806 2SA821 2SA825 2SA825S 2SA83Û 2SA830S 2SA854 2SD1966 2SD1255M 2SB maintenance IMB6 2SC2808

    MJ2955 equivalent

    Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
    Text: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W


    OCR Scan     		PDF N1304 150mW 300mA 2SD187 200mW 150mA 2SA221 2SB22/ORN 170mW 2SB22/YEL MJ2955 equivalent MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent

    T-23

    Abstract: No abstract text available
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety of chip geometries in order to offer high voltage transistors with a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		PDF OT-89 OT-223 OT-23 OT-89 T-23

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B


    OCR Scan     		PDF 2N2102 2N4036 2N210? 2N4056 2N21Q2 150mA 150mA 8100B

    BCW65C

    Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P

    SOT-23 X1

    Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
    Text: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I


    OCR Scan     		PDF BCW31R BCW32R BCW33R OT-23 BC108A BC108B BC108C BCW71R BCW72R SOT-23 X1 BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    marking of m7 diodes

    Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
    Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan     		PDF BCX19 BCX20 BCX17 BCX18. OT-23 BCX20 FMMT-A13 FMMT-A14 marking of m7 diodes ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


    OCR Scan     		PDF BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23

    ZT Ferranti

    Abstract: BF4935P SE-169 TX-550 X752 X449
    Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current


    OCR Scan     		PDF TQ-92 ZTX752 ZTX751 ZTX749 SO-96 107il/D SE172 ZT Ferranti BF4935P SE-169 TX-550 X752 X449

    transistor marking code 7E SOT-23

    Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
    Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.


    OCR Scan     		PDF BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages


    OCR Scan     		PDF ZX557 ZTX554 ZTX555 ZTX556 ZTX557

    MARKING CODE A06

    Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
    Text: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,


    OCR Scan     		PDF FMMT-A05 FMMT-A55 FMMT-A56. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 MARKING CODE A06 marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1

    sot-23 MARKING CODE G1

    Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
    Text: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,


    OCR Scan     		PDF FMMT-A55 FMMT-A56 FMMT-A06. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 sot-23 MARKING CODE G1 code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking