ns102
Abstract: D635-15 Samsung SD650-5 650nm 5mw, 9MM knight rider NS102A SD650-5 650nm 5mw, 9MM 650NM laser diode 5mw NM808-30 sniper EPM650-5
Text: NVG, Inc., - Laser Diodes and Laser Diode Modules LASER MODULES LONG LASER DIODES SHORT WAVELENGTHS WAVELENGTHS NVG, Inc. manufactures laser diodes, laser modules and laser products. Visible and infrared, high and low power. Various wavelengths available - 635, 640, 650, 660, 670, 690, 780, 808, 840, 904, 980
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HFZ-307)
ns102
D635-15
Samsung SD650-5 650nm 5mw, 9MM
knight rider
NS102A
SD650-5 650nm 5mw, 9MM
650NM laser diode 5mw
NM808-30
sniper
EPM650-5
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pinFET
Abstract: LDPF0120
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated PINFET optical receiver modules High sensitivity
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1550nm
PINF24XX
0036XX
0065XX
0110XX
850nm
0004XX
0012XX
0024XX
0032XX
pinFET
LDPF0120
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pinFET
Abstract: Detector fiber pigtail 1550nm LDI 1310 nm Laser Diode 1550nm 1300nm Laser Diode 850nm 1300nm TG Series LDPF0120 LDPF
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated PINFET optical receiver modules High sensitivity
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1550nm
0036XX
0065XX
0110XX
0004XX
0012XX
0024XX
0032XX
0120XX
pinFET
Detector fiber pigtail 1550nm
LDI 1310 nm
Laser Diode 1550nm 1300nm
Laser Diode 850nm 1300nm
TG Series
LDPF0120
LDPF
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LT022PD
Abstract: IR3C08 LT028GS sharp lt022 SPD102 IR3C07 LT015PD sharp lt024 LT022 IR3C01
Text: Drive Circuits I x x x x x x x Typical Drive Circuits for M-Type Laser Diodes x x x x x x x x x I Fig.30-l Typical Drive Circuit ,5v — The power output of a laser diode is easily changed by fluctuations in the ambient temperature, A drive circuit with an automatic
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25mV/mW.
LT021/24/27/17/15
LT022PD
IR3C08
LT028GS
sharp lt022
SPD102
IR3C07
LT015PD
sharp lt024
LT022
IR3C01
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45TE9
Abstract: laser diode 808nm
Text: 60W 808nm 27% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler OPC808-60C-641 Features: • Mounted 10mm laser diode bar • Passive 1” x 1” Cu block cooler • 27% fill factor 135µm emitter / 500µm pitch • 60W operating power •
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808nm
OPC808-60C-641
808nm
OPC808-60C-641
790-830nm
21CFR
BH12902
790-830nm
45TE9
laser diode 808nm
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EB98-J
Abstract: 105w DIN912 EB81-F
Text: Actively Cooled Diode Laser Stack 25 … 100 W cw, Both Axes Collimated SPL EBxx Features Applications • Both axes collimated linear stack, actively cooled, for cw operation • Highly reliable strained layer InGa Al As/GaAs material with MTTF life time > 10000 h
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DIN912
GWOY6035
EB98-J
105w
EB81-F
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seismic sensor
Abstract: DWDM ITU Frequency Chart TS 3891 GR-468 cw laser for broadband diode 3428
Text: 1792 ECCW Narrow Linewidth CW External Cavity Laser Diode Analog Lasers & Photodiodes BROADBAND The 1792 ECCW series external cavity laser is a cost effective solution for a coherent laser source. The laser is fabricated in a 14-pin hermetically sealed butterfly package that incorporates
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14-pin
1792-SMF-043-10-50-FA:
50kHz
seismic sensor
DWDM ITU Frequency Chart
TS 3891
GR-468
cw laser for broadband
diode 3428
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ORTEL bias tee
Abstract: No abstract text available
Text: DATASHEET| JUNE 21, 2008 1792 ECCW Narrow Linewidth CW External Cavity Laser Diode The 1792 ECCW series external cavity laser is a cost effective solution for a coherent laser source. The laser is fabricated in a 14-pin hermetically sealed butterfly package that incorporates a bias tee
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14-pin
GR-468
1792-SMF-043-10-50-FA:
50kHz
ORTEL bias tee
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CD laser pickup assembly
Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Text: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output
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635nm
650nm
780nm
120mA
CD laser pickup assembly
laser diode symbol schematic
ir3c09
DVD pickup assembly
DVD laser pickup assembly
DVD optical pick-up assembly
schematic diagram tv sharp
IR3C08
RVK POWER FACTOR CONTROLLER
780nm 500mW Laser Diode for dvd
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LB7678
Abstract: opnext Hitachi DSA0045
Text: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator
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LB7678
14-pin
LB7678
LB767
FOD-DS-00075
opnext
Hitachi DSA0045
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940-975
Abstract: coolant DIN912 EB98-J
Text: Actively Cooled Diode Laser Stack 25 ¼ 100 W cw, Both Axes Collimated SPL EBxx Preliminary Data Features Applications • Both axes collimated linear stack, actively cooled, for cw operation • Highly reliable strained layer InGa Al As/GaAs material with MTTF life time > 10000 h
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DIN912
GWOY6035
940-975
coolant
EB98-J
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opnext l
Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Text: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)
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LE7602-LAC,
LE7602-LAxxxC
LE7602-LAC
FOD-DS-00073
LE7602-LAC
opnext l
LE7602-LA350C
LE7602-LA180C
Hitachi DSA0045
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laser wavelength locker
Abstract: tee photonics
Text: PRELIMINARY DATASHEET| JUNE 13, 2007 ECCW Narrow Linewidth CW External Cavity Laser Diode The ECCW series external cavity laser is a cost effective solution for a coherent laser source. The laser is fabricated in a 14-pin hermetically sealed butterfly package that incorporates a bias tee circuit, an
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14-pin
GR-468
ECCW-SMF-430-10-B-FA:
laser wavelength locker
tee photonics
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EMCORE ECCW
Abstract: cavity laser coherent
Text: DRAFT DATA SHEET| NOVEMBER 1, 2006 ECCW Narrow Linewidth CW External Cavity Laser Diode The ECCW series external cavity laser is a cost effective solution for a coherent laser source. The laser is fabricated in a 14-pin hermetically sealed butterfly package that incorporates a bias tee circuit, an
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14-pin
ECCW-100-430-10-C-FA:
EMCORE ECCW
cavity laser coherent
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: RLD-78MP10 RLD-78PP10 RLD-78NP10 AIGaAs double-hetero visible laser diodes These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. Dim ensions U n its : mm
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RLD-78MP10
RLD-78PP10
RLD-78NP10
RLD-78MA
RLD-78PA
DD1GM27
RLD-78MP10,
RLD-78PP10,
RLD-78NP10
G01042Ã
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RLD-78M35
Abstract: No abstract text available
Text: AIGaAs double-hetero visible laser diodes RLD-78M35 RLD-78P35 RLD-78N35 These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. These diodes were especially developed for products
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RLD-78M35
RLD-78P35
RLD-78N35
RLD-78MA
RLD-78PA
RLD-78M
RLD-78M35,
RLD-78P35,
720kHz
RLD-78M35
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2sk125
Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
Text: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)
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1T32A
1T33A
1T33C
1T362
1T363
1T364
1T359
1T360
1T32A:
1T33A:
2sk125
SLD300
photo magneto electric
1T32
SLD203
ic dm 311
SGM2006M
"CD pickup"
1T339
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Untitled
Abstract: No abstract text available
Text: OD-S524 Series Pigtail Cords for SMT Modules NEC's new surface-mount, low-cost laser diode module and photo diode module called SMT module are designed for use in fiber optic communications applications such as ATM, FITL and SONET. OD-S524 series can be detached from SMT module for enhanced flexibility.
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OD-S524
OD-S524-SCG-MM,
OD-S524-SC-MM
OD-S524-FCPC-SM,
OD-S524-FCPC-MM
OD-S524-ST-SM,
OD-S524-ST-MM
OD-S524
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RTJ DIODE
Abstract: No abstract text available
Text: SONY SLD323XT High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD323XT is a high power, gain-guided laser diode produced by MOCVD method*’. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
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SLD323XT
SLD300
SLD323XT
RTJ DIODE
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Untitled
Abstract: No abstract text available
Text: - LDÌ. Laser Diode Incorporated 2 Olsen Avenue, Edison, N ew Jersey 0 8820 USA Voice: 7 3 2 -5 4 9 -9 0 0 1 , Fax: 7 3 2 -9 0 6 -1 5 5 9 Internet: www.laserdiode.com E-mail: sales@laserdiode.com PINAMP Optical Receiver Modules 52 M b /s, 155 M b /s, 6 2 2 M b /s
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M6651
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M6651OP/FP LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a sem iconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying
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M6651OP/FP
M66510
120mA
L4403R
M6651
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66512P/FP LASER-DIODE DRIVER DESCRIPTION The M66512 is a semiconductor laser-diode driver for driving a specific type* of semiconductor laser, in which the anode of a semiconductor laser diode is connected in stem structure to the cathode of a monitoring photodiode.
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M66512P/FP
M66512
10Mbit/s
50ns/div)
25Mbit/s
20ns/div)
40Mbit/s
10ns/div)
20Mbit/s
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Rsens and RREF
Abstract: No abstract text available
Text: . VM8001 LASER POWER AMPLIFIER PRELIMINARY FEATURES • High-Performance Integrated Circuit for Laser Diode Drive and Power Monitoring • Single +5-Volt Supply • Voltage-Controlled Read and Write Currents from 10 to 100 mA • 4 ns Rise and Fall Write Current Pulses With Only 3%
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VM8001
20-Lead
Rsens and RREF
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