Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU02N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU01N60
O-252
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CHM25N15LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)
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CHM25N15LPAGP
O-252)
250uA
CHM25N15LPAGP
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CHM05N65PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)
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CHM05N65PAGP
O-252)
250uA
CHM05N65PAGP
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D2N60
Abstract: U2N60
Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJD2N60
PJU2N60
2002/95/EC
O-252
O-251
O-252
O-251
MIL-STD-750
D2N60
U2N60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
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d1740
Abstract: NP55N04SUG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK
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NP55N04SUG
NP55N04SUG
O-252
O-252)
d1740
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SS*2n60b
Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031
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O-252
O-252
FDD3706
FDD6512A
FDD6530A
RFD20N03SM
FDD6676
ISL9N306AD3ST
FDD6672A
FDD66
SS*2n60b
FDD5614P
FQD7P20
FDD6512A
SFR9224
FQD14N15
IRFR420A
MA8630
MOSFET TO-252
FDD6530A
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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ut3055
Abstract: diode BA 158 mosfet BA 95 S
Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source ORDERING INFORMATION
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UT3055
O-252
UT3055
O-251
UT3055-TM3-T
UT3055L-TM3-T
UT3055-TN3-R
UT3055L-TN3-R
UT3055-TN3-T
UT3055L-TN3-T
diode BA 158
mosfet BA 95 S
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SSD5030N
Abstract: AIDM-110 South Sea Semiconductor
Text: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o
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SSD5030N
O-252
O-252
SSD5030N
AIDM-110
South Sea Semiconductor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.
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O-252
O-252D
OT-223
6N10G-AA3-R
6N10L-TN3-R
6N10G-TN3-R
6N10L-TND-R
6N10G-TND-R
QW-R502-486
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D17322
Abstract: 2SK3993 2SK3993-ZK 2SK399
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK3993 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3993 TO-251 MP-3 2SK3993-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching
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2SK3993
2SK3993
O-251
2SK3993-ZK
O-252
O-251)
D17322
2SK3993-ZK
2SK399
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Untitled
Abstract: No abstract text available
Text: FDD9409_F085 N-Channel PowerTrench MOSFET 40 V, 90 A, 3.2 mΩ D Features Typ RDS on = 2.3mΩ at VGS = 10V, ID = 80A D G Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A UIS Capability G S RoHS Compliant Qualified to AEC Q101 D-PAK TO-252 (TO-252)
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FDD9409
O-252
O-252)
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n-channel 500v sot 23 Power MOSFET
Abstract: TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ
Text: TSM4ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM4ND50
O-220
O-252
TSM4ND50
n-channel 500v sot 23 Power MOSFET
TSM4ND50CP
N-Channel mosfet 400v to220
N-CHANNEL POWER MOSFET
SOT-252
MOSFET 500V 15A
MOSFET 400V TO-220
MOSFET 500V 3A
N-channel 500V mosfet
TSM4ND50CZ
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP36P06SLG
NP36P06SLG
O-252
O-252)
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D18008
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP36P06SLG
NP36P06SLG
O-252
O-252)
175ntrol
D18008
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UF630L-TN3-R
Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UF630L-TN3-R
UF630
UF630-TA3-T
UF630-TF3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF4N20
O-252
UF4N20
OT-223
UF4N20L-TN3-R
UF4N20G-TN3-R
UF4N20L-AA3-R
UF4N20G-AA3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching
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UF4N20Z
O-252
UF4N20Z
OT-223
UF4N20ZL-TN3-R
UF4N20ZG-TN3-R
UF4N20ZL-AA3-R
UF4N20ZG-AA3-R
QW-R502-753
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NP36P06SLG
Abstract: D18008 MOSFET 2301
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.
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NP36P06SLG
NP36P06SLG
O-252
O-252)
D18008
MOSFET 2301
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UF630L-TN3-R
Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
UF630L-TA3-T
UF630G-TA3-Tt
QW-R502-049
UF630L-TN3-R
uf630 power mosfet
UF630
UF630L-TA3-T
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apm4048d
Abstract: APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784
Text: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)=37mΩ (typ.) @ VGS= -10V (3) D1
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APM4048DU4
-40V/-6A,
O-252-4
O252-4
APM40ckness
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
apm4048d
APM4048D. datasheet
apm*4048D
APM4048
APM4048DU4
MOSFET N-CH 200V
2l TRANSISTOR SMD MARKING CODE
STD-020C
DSA0042784
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Untitled
Abstract: No abstract text available
Text: c p = G e n e r a l v S e m ic o n d u c t o r GFD30N03 N-Channel Enhancement-Mode MOSFET V d s 30V R ds <ON) 15rnQ I d 43A TO-252 DPAK) 0.170 (4.32) min. Dimensions in inches and (millimeters) (6.172) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body
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OCR Scan
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GFD30N03
15rnQ
O-252
O-252
MIL-STD-750,
011oz.
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