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    TO-252 MOSFET N CHANNEL Search Results

    TO-252 MOSFET N CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-252 MOSFET N CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		PDF O-252 CJU02N60 O-252

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading


    Original     		PDF O-252 CJU01N60 O-252

    CHM25N15LPAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)


    Original     		PDF CHM25N15LPAGP O-252) 250uA CHM25N15LPAGP

    CHM05N65PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)


    Original     		PDF CHM05N65PAGP O-252) 250uA CHM05N65PAGP

    D2N60

    Abstract: U2N60
    Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60

    UF630L-TN3-R

    Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630-TA3-T UF630L-TA3-T QW-R502-049 UF630L-TN3-R UF630 UF630-TA3-T UF630-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching


    Original     		PDF UF4N20 O-252 UF4N20 OT-223 UF4N20L-TN3-R UF4N20G-TN3-R UF4N20L-AA3-R UF4N20G-AA3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching


    Original     		PDF UF4N20Z O-252 UF4N20Z OT-223 UF4N20ZL-TN3-R UF4N20ZG-TN3-R UF4N20ZL-AA3-R UF4N20ZG-AA3-R QW-R502-753

    UF630L-TN3-R

    Abstract: uf630 power mosfet UF630 UF630L-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630L-TA3-T UF630G-TA3-Tt QW-R502-049 UF630L-TN3-R uf630 power mosfet UF630 UF630L-TA3-T

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    UF3055

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF3055 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION 1 TO-252 As an N-channel enhancement mode power MOSFET, the UTC UF3055 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls


    Original     		PDF UF3055 O-252 UF3055 OT-223 UF3055L-AA3-R UF3055G-AA3-R UF3055L-TN3-R UF3055G-TN3-R

    ut3055

    Abstract: diode BA 158 mosfet BA 95 S
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION


    Original     		PDF UT3055 O-252 UT3055 O-251 UT3055-TM3-T UT3055L-TM3-T UT3055-TN3-R UT3055L-TN3-R UT3055-TN3-T UT3055L-TN3-T diode BA 158 mosfet BA 95 S

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.


    Original     		PDF O-252 O-252D OT-223 6N10G-AA3-R 6N10L-TN3-R 6N10G-TN3-R 6N10L-TND-R 6N10G-TND-R QW-R502-486

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251  FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  1 TO-252 SYMBOL


    Original     		PDF UT50N03 O-251 O-252 O-252D UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-T UT50N03G-TN3-T UT50N03L-TN3-R UT50N03G-TN3-R

    SSD5030N

    Abstract: AIDM-110 South Sea Semiconductor
    Text: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o


    Original     		PDF SSD5030N O-252 O-252 SSD5030N AIDM-110 South Sea Semiconductor

    n-channel 500v sot 23 Power MOSFET

    Abstract: TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ
    Text: TSM4ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM4ND50 O-220 O-252 TSM4ND50 n-channel 500v sot 23 Power MOSFET TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ

    168B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET „ 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL TO-251 2.Drain


    Original     		PDF UT50N03 O-252 O-251 UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TN3-T UT50N03G-TN3-T 168B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 „ DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche


    Original     		PDF 30N06 O-252 30N06 O-220 O-22at QW-R502-087

    TO-252 MOSFET

    Abstract: FDD6688 FDD6688S FDS6688S
    Text: tm FDD6688S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDD6688S FDD6688S O-252 O-252) TO-252 MOSFET FDD6688 FDS6688S

    TSM5ND50

    Abstract: A08 marking marking A08 MOSFET 400V TO-220 SOT-252 18BSC N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET mosfet "marking code 44" A08 MARKING CODE
    Text: TSM5ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM5ND50 O-220 O-252 TSM5ND50 A08 marking marking A08 MOSFET 400V TO-220 SOT-252 18BSC N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET mosfet "marking code 44" A08 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low


    Original     		PDF UTT6N10Z O-252 UTT6N10Z OT-223 UTT6N10ZG-AA3-R UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R

    Untitled

    Abstract: No abstract text available
    Text: FDD9409_F085 N-Channel PowerTrench MOSFET 40 V, 90 A, 3.2 mΩ D Features „ Typ RDS on = 2.3mΩ at VGS = 10V, ID = 80A D G „ Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A „ UIS Capability G S „ RoHS Compliant „ Qualified to AEC Q101 D-PAK TO-252 (TO-252)


    Original     		PDF FDD9409 O-252 O-252)

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		PDF UF640 O-252 O-263 UF640 O-220 O-220F O-220F2 QW-R502-066

    Untitled

    Abstract: No abstract text available
    Text: c p = G e n e r a l v S e m ic o n d u c t o r GFD30N03 N-Channel Enhancement-Mode MOSFET V d s 30V R ds <ON) 15rnQ I d 43A TO-252 DPAK) 0.170 (4.32) min. Dimensions in inches and (millimeters) (6.172) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body


    OCR Scan     		PDF GFD30N03 15rnQ O-252 O-252 MIL-STD-750, 011oz.