TO-251
Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Text: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14
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O-251
O-251
O-251,
TO-251
TO-251 weight
TO-251 fairchild
TO-251 Package
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BY 255 diode
Abstract: DIODE BY 255 rectifier diode do-201 diode do-201
Text: BY 251.BY 255 Type Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage IF = - A IR = - A IRR = - A Axial lead diode Standard silicon rectifier diodes BY 251.BY 255 Forward Current: 3 A Reverse Voltage: 200 to 1300 V
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DO-201
MIL-STD-750
BY 255 diode
DIODE BY 255
rectifier diode do-201
diode do-201
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F0007
Abstract: AC12 F0004 R0300 f0003a abb ptc 100 temperature sensor
Text: Data sheet Measuring and monitoring relays CM-MSS 4 , CM-MSS (5) Thermistor motor protection relays 2CDC 251 047 F0004 2CDC 251 077 F0007 The devices CM-MSS (4) and (5) are used to monitor the overload of motors by the wiring temperature. The motors have to be fitted with PTC sensors.
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F0004
F0007
F0007
AC12
F0004
R0300
f0003a
abb ptc 100 temperature sensor
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tfk 325
Abstract: No abstract text available
Text: TFK 251 32 RKK Product information Conductor Stranded, annealed copper, tinned, flexible, class 5 according to IEC 60228. Three parallel cores to form a flat conductor. Insulation PVC, black and gray Jacket PVC, gray, square cross section Operating voltage
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Co251
Weight/100m
tfk 325
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IXTU1N80P
Abstract: T1N80 1N80P
Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C
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O-263
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
O-251
O-220
IXTU1N80P
T1N80
1N80P
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1N80P
Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
Text: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
O-263
O-251
O-220
1N80P
T1N80
IXTU1N80P
IXTA1N80P
IXTA1N80
IXTP1N80P
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Untitled
Abstract: No abstract text available
Text: Fixed Coaxial Attenuators Model 251 High Power, N Connectors dc to 6.0 GHz 200 Watts Convection Cooled, Bi-directional RoHS POWER RATING: 200 watts average Bi-directional to 25°C ambient temperature, derated linearly to 20 watts @ 125°C ambient. 10 kilowatt peak (5 sec pulse width;
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MIL-STD-348
MIL-C-39012
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Untitled
Abstract: No abstract text available
Text: Fixed Coaxial Attenuators Model 251 High Power Fixed Coaxial Attenuator dc to 6.0 GHz 200 Watts RoHS Convection Cooled, Bidirectional POWER RATING: 200 watts average Bidirectional to 25°C ambient temperature, derated linearly to 20 watts @ 125°C ambient. 10 kilowatt peak (5 sec pulse width;
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MIL-DTL-3933.
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTU5N50P
IXTY5N50P
IXTA5N50P
IXTP5N50P
O-251
O-252
O-220
O-251
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IXTA5N50P
Abstract: IXTP5N50P IXTU5N50P
Text: IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTU5N50P
IXTY5N50P
IXTA5N50P
IXTP5N50P
O-251
O-252
O-263
O-220AB
O-251
O-220
IXTP5N50P
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ABB inverter motor fault code
Abstract: ABB time delay device for undervoltage release ABB inverter motor fault S0014
Text: Data sheet Grid feeding monitoring for generating plants connected to distribution systems CM-UFD.M33 2CDC 251 002 S0014 The CM-UFD.M33 is a multifunctional grid feeding monitoring relay. It trips the section switch which is connected between the distributed generation
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S0014
10-minutes
ABB inverter motor fault code
ABB time delay device for undervoltage release
ABB inverter motor fault
S0014
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTU05N100
IXTY05N100
750mA
O-251
05N100M
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTU12N06T IXTY12N06T = 60V = 12A Ω ≤ 85mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTU12N06T
IXTY12N06T
O-251
O-252
12N06T
3-08-A
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = RDS on 1000V 750mA 17 N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M
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IXTU05N100
IXTY05N100
750mA
O-251
100ms
05N100
3-14-A
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ABB inverter motor fault code
Abstract: ABB time delay device for undervoltage release D0200
Text: Data sheet Grid feeding monitoring according to CEI 0-21 CM-UFD.M22 2CDC 251 005 V0013 The CM-UFD.M22 is a multifunctional grid feeding monitoring relay. It provides different monitoring functions in accordance with CEI 0-21 to detect over- and undervoltage 10-minutes average value,
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V0013
10-minutes
ABB inverter motor fault code
ABB time delay device for undervoltage release
D0200
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IXTY12N06T
Abstract: IXTU12N06T 12n06 12N06T
Text: Preliminary Technical Information IXTU12N06T IXTY12N06T TrenchMVTM Power MOSFET VDSS ID25 = 60V = 12A Ω ≤ 85mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ
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IXTU12N06T
IXTY12N06T
O-251
O-252
12N06T
3-08-A
IXTY12N06T
IXTU12N06T
12n06
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IXTY05N100
Abstract: IXTU05N10 IXTU 1000V IXTU05N
Text: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000
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IXTU05N100
IXTY05N100
750mA
O-251
05N100M
IXTY05N100
IXTU05N10
IXTU 1000V
IXTU05N
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Untitled
Abstract: No abstract text available
Text: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSMD12P10
KSMU12P10
O-252
O-251
-100V,
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ABB make RED 670
Abstract: abb earth leakage relay en iec 60721-3-3 S3L14 insulation monitoring relay F0209 AC12 GB14048 R0100 R0200
Text: Data sheet Insulation monitoring relay CM-IWS.2 For unearthed AC systems up to Un = 400 V AC The CM-IWS.2 serves to monitor insulation resistance in accordance with IEC 61557-8 in unearthed IT AC systems with a voltage up to 400 V AC. 2CDC 251 079 S0009
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S0009
ABB make RED 670
abb earth leakage relay
en iec 60721-3-3
S3L14
insulation monitoring relay
F0209
AC12
GB14048
R0100
R0200
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Untitled
Abstract: No abstract text available
Text: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 1 1 2 TO-251 (IPAK) 40 V 3 1 • Linear current limitation
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VNB14NV04,
VND14NV04
VND14NV04-1,
VNS14NV04
VNB14NV04
VND14NV04-1
O-252
O-251
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IXTP01N100D
Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)
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IXTY01N100D
IXTU01N100D
IXTP01N100D
O-252
O-251
O-220)
TY01N100D
100ms
IXTP01N100D
01N100D
TO-251 weight
IXTU01N100D
IXTY01N100D
IXTP01N100
depletion mode mosfet n-channel 1000V
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)
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IXTY01N100D
IXTU01N100D
IXTP01N100D
O-252
O-251
100ms
01N100D
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Untitled
Abstract: No abstract text available
Text: 251 3D exploded -Click on image to show toolbar. Use to Play/Pause Animation. -Left click and drag on image to move 3D model. L 5.63 W 3.25 H 1.50 PART NO. 5-1 DESCRIPTION (Included) ACCSESSORIES (Optional) TOP 25 1025 6005 BOTTOM Battery Cover #4X3/8” Self tapping (4)
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ssories/CircuitBoard/drawings/359-459-cbg
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Untitled
Abstract: No abstract text available
Text: - 7 ^ / ' c 2 3 D 251 NR 53E D EUPEC • 3m]32i7 aaocnio to? ■ upec D 251 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Vrrm Spitzensperrspannung Effektiver Ifrmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values
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OCR Scan
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D448N.
T-91-20
D1509N.
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