Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO-220AB OPTION E3045 PACKAGE Search Results

    TO-220AB OPTION E3045 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TK3R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TK2R4E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00244 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO-220AB OPTION E3045 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-220AB Option E3045 Package Siemens Package Outlines Original PDF

    TO-220AB OPTION E3045 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET • • • • BTS110 N channel Enhancem ent mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation Type ^DS


    OCR Scan     		PDF BTS110 -220AB C67078-A5008-A2 C67078-A5008-A3 GPT05338 E3045 C67078-A5008-A4