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    TO-106 TRANSISTOR Search Results

    TO-106 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    TO-106 TRANSISTOR Price and Stock

    Honeywell Sensing and Control HOA1180-106

    HOA Series Reflective Sensor, Transistor Output
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com HOA1180-106 61
    • 1 $74.98
    • 10 $74.98
    • 100 $17.44
    • 1000 $15
    • 10000 $15
    		Buy Now

    TO-106 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor case To 106

    Abstract: TO-106 to106 VTT9002H
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H transistor case To 106 TO-106 to106 VTT9002H

    Untitled

    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002H, 9003H O-106 O-106 VTT9002H VTT9003H

    VTT9102h

    Abstract: No abstract text available
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H VTT9102h

    transistor case To 106

    Abstract: TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor
    Text: .040" NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102, O-106 O-106 VTT9102 VTT9103 transistor case To 106 TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor

    transistor case To 106

    Abstract: case to106 to106 VTT9102H VTT9103H
    Text: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9102H, 9103H O-106 O-106 VTT9102H VTT9103H transistor case To 106 case to106 to106 VTT9102H VTT9103H

    transistor case To 106

    Abstract: case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor
    Text: .040" NPN Phototransistors VTT9002, 9003 Clear Epoxy TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.


    Original     		PDF VTT9002, O-106 O-106 VTT9002 VTT9003 transistor case To 106 case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor

    80386dx memory interfacing

    Abstract: energy meter circuit diagram inverter power 12v dc to 220 dc circuit diagram mosfet triggering circuit for inverter 84M109 inverter power 12v dc to 220 dc what is pull up resistor 80386DX DS1993 DS2405
    Text: APPLICATION NOTE 106 Application Note 106 Complex MicroLANs I. GENERAL CONSIDERATIONS A. Topology The MicroLANTM is a feeder network using a single data line plus ground reference for digital communication. It provides digital information at very low cost to computers and their networks. A MicroLAN Figure 1 can be


    Original     		PDF RS232 80386dx memory interfacing energy meter circuit diagram inverter power 12v dc to 220 dc circuit diagram mosfet triggering circuit for inverter 84M109 inverter power 12v dc to 220 dc what is pull up resistor 80386DX DS1993 DS2405

    Untitled

    Abstract: No abstract text available
    Text: Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω PGA-106-75+ 0.05 to 1.5 GHz The Big Deal • High IP3 and IP2 • Flat Gain / Excellent Return Loss • Low Noise Figure SOT-89 PACKAGE Product Overview PGA-106-75+ RoHS compliant is an advanced wideband amplifier fabricated using E-PHEMT technology


    Original     		PDF PGA-106-75+ OT-89

    TIP105

    Abstract: TIP106 TIP107
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS


    Original     		PDF TIP105/106/107 O-220C TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107

    TIP102

    Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS


    Original     		PDF TIP100/101/102 O-220C TIP105/106/107 TIP100 TIP101 TIP102 TIP102 TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn

    Untitled

    Abstract: No abstract text available
    Text: Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω PGA-106-75+ 0.05 to 1.5 GHz The Big Deal • High IP3 and IP2 • Flat Gain / Excellent Return Loss • Low Noise Figure SOT-89 PACKAGE Product Overview PGA-106-75+ RoHS compliant is an advanced wideband amplifier fabricated using E-PHEMT technology


    Original     		PDF PGA-106-75+ OT-89

    TCBT-14

    Abstract: PGA-106-75 Agilent RF amplifier SOT-89
    Text: Flat Gain, High Dynamic Range Monolithic Amplifier 75Ω PGA-106-75+ 0.05 to 1.5 GHz The Big Deal • High IP3 and IP2 • Flat Gain / Excellent Return Loss • Low Noise Figure SOT-89 PACKAGE Product Overview PGA-106-75+ RoHS compliant is an advanced wideband amplifier fabricated using E-PHEMT technology


    Original     		PDF PGA-106-75+ OT-89 TCBT-14 PGA-106-75 Agilent RF amplifier SOT-89

    TIP105 Darlington transistor

    Abstract: TIP105 TIP106 TIP107 TIP107 central
    Text: Darlington Power Transistors PNP TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


    Original     		PDF TIP105/106/107 O-220 O-220, MIL-STD-202, TIP105 TIP106 TIP107 TIP105 Darlington transistor TIP105 TIP106 TIP107 TIP107 central

    ferrite n27

    Abstract: bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters
    Text: AN1628/D Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE TUNNELING EFFECT When the electrical field approaches 106 V/cm in Silicon, a significant current begins to flow by means of the band to


    Original     		PDF AN1628/D ferrite n27 bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters

    sot-23 rks

    Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
    Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF OT-23 Q62702-F1346 900MHz Dec-13-1996 sot-23 rks marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration

    Untitled

    Abstract: No abstract text available
    Text: LJ na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N5771 PN5910 U.S.A. JEDEC TO-92 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5910 JEDEC TO-106 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage


    Original     		PDF 2N5771 PN5910 2N5910 O-106 100yA 100uA 100nA 100mA

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    2SC817

    Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
    Text: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200


    OCR Scan     		PDF 2N5127 O-106 2N5130 2N5131 2N5132 2N5179 O-72G 2SC817 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2SC1789 2SC838

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


    OCR Scan     		PDF O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60

    Untitled

    Abstract: No abstract text available
    Text: TO-237 Plastic Package Transistors NPN 106


    OCR Scan     		PDF O-237

    2N3563

    Abstract: BF163 se5020 Fairchild 2N2857 fairchild to-106 2N3880 BF159 PE5025 2N5130 BF167
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL NPN RF-IF AMPLIFIER AND OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY (Cont'd) Item DEVICE NO. PG @ f [GMA] (OSC POWER) dB Min MHz C0b @f MHz Pd ta 25°C mW 3.5 (Typ) 60 310 TO-106 0.8 (Typ) 3.0 (Typ) 40 310 TO-106 [C ce]


    OCR Scan     		PDF BF159 O-106 BF163 PE5025 FTR118 BF167 PE5030B BF222 2N3563 se5020 Fairchild 2N2857 fairchild to-106 2N3880 2N5130

    MEL12

    Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
    Text: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A


    OCR Scan     		PDF CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11

    AF106

    Abstract: AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106
    Text: 5SC D • 023SbQS GGQHG47 S H S I E G ; PNP Germanium RF Transistor T '- lf- O l ' A F 106 SIEMENS A K T I E N G E S E L L S C H A F T 04047 D for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72


    OCR Scan     		PDF 023SbOS GGGHG47 AF106 AKTIEN6ESELLSCHAF25C AF106 AF108 oms 450 tlf 4 120 siemens 100MHZ 200MHZ transistor pnp 30V 1A 1W 2sc 103 transistor Germanium mesa tlf 106

    2N3055 RCA

    Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N3055 RCA RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410