TVV020
Abstract: transistor B A O 331 d 331 transistor 1080 ASI10659 406G
Text: TVV020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV020 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD 45° FEATURES: A D • Common Emitter • PG = 8.0 dB at 20 W/225 MHz • Omnigold Metalization System
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TVV020
TVV020
ASI10659
transistor B A O 331
d 331 transistor 1080
ASI10659
406G
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Untitled
Abstract: No abstract text available
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
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TVV030
Abstract: ASI10660
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Common Emitter • PG = 6.0 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
ASI10660
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TVV005
Abstract: ASI10654 TRANSISTOR A 225
Text: TVV005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV005 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System
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TVV005
TVV005
ASI10654
TRANSISTOR A 225
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RT6105
Abstract: RT6105X
Text: RT6105X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI RT6105X is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: D • Common Emitter • PG = 15 dB at 5.0 W/225 MHz • Omnigold Metalization System
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RT6105X
RT6105X
RT6105
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Untitled
Abstract: No abstract text available
Text: TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030
TVV030
ASI10660
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Untitled
Abstract: No abstract text available
Text: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System
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TVV014A
TVV014A
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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TVV010
Abstract: imd1
Text: TVV010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV010 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .380 4L STUD .112x45° A D B FEATURES: S • Common Emitter • PG = 10 dB at 10 W/225 MHz • Omnigold Metalization System
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TVV010
TVV010
112x45°
ASI10656
imd1
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TVV014A
Abstract: ASI10658
Text: TVV014A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014A is designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System
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TVV014A
TVV014A
ASI10658
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TVV100
Abstract: ASI10662
Text: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System
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TVV100
TVV100
ASI10662
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TVV007
Abstract: ASI10655
Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • 5:1 VWR capability • PG = 10 dB at 7.5 W/225 MHz
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TVV007
TVV007
ASI10655
ASI10655
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ASI10657
Abstract: TVV014
Text: TVV014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV014 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R FEATURES: D • Common Emitter • PG = 14 dB at 14 W/225 MHz • Omnigold Metalization System
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TVV014
TVV014
ASI10657
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SD1456
Abstract: No abstract text available
Text: SD1456 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1456 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System
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SD1456
SD1456
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Untitled
Abstract: No abstract text available
Text: TVV007 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV007 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 6L FLG A C 2x ØN FU LL R D FEATURES: • Common Emitter • PG = 10 dB at 7.5 W/225 MHz • Omnigold Metalization System
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TVV007
TVV007
ASI10655
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TVV030A
Abstract: IC 555 ASI10661
Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030A
TVV030A
IC 555
ASI10661
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Untitled
Abstract: No abstract text available
Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System
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TVV030A
TVV030A
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VTV1250
Abstract: 125W225
Text: VTV1250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 8L FLG DESCRIPTION: C D The ASI VTV1250 is Designed for Television Band III Applications up to 225 MHz. A B 1 2 G FULL R O F E .1 25 • Common Emitter • PG = 12 dB at 125 W/225 MHz • Omnigold Metalization System
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VTV1250
VTV1250
125W225
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2N6439
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
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2N6439
Abstract: UT25 coaxial VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
Collector-B400
2N6439
UT25 coaxial
VK200 ferrite choke
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2N6439
Abstract: vk200* FERROXCUBE
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
2N6439
vk200* FERROXCUBE
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2N6439
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439
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2N3402
Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3402
2n3404
2N3405
2N3403
2N3638
N3404
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2N2713
Abstract: 2N2714 2N2926 equivalent 2n2714 transistor 2N3404 2N2924 2N3391 equivalent 2N3392 equivalent NPN/2n2714 transistor 2N2712
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N2926 equivalent
2n2714 transistor
2N3404
2N3391 equivalent
2N3392 equivalent
NPN/2n2714 transistor
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