transistor 2N4248
Abstract: 2N4248 2n4249
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage
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2N4248
2N4249
2N4250
2N4250A
O-106
VCB-40V
2N4250A
100yA
transistor 2N4248
2N4248
2n4249
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transistor 2N4248
Abstract: 2N4250 2N4248 2n4249
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Col lector-Emitter Voltage Collector-Emftter Voltage
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2N4248
2N4249
2N4250
2N4250A
O-106
20MHz
100KQ
transistor 2N4248
2N4250
2N4248
2n4249
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NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP100/101/102
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TIP105/106/107
O-220
TIP100/101/102
TIP105
TIP106
TIP107
NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
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NPN Transistor 8A
Abstract: TIP102 Darlington transistor
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107
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TIP100/101/102
O-220
TIP105/106/107
TIP100
TIP101
TIP102
NPN Transistor 8A
TIP102 Darlington transistor
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MOTOROLA OPTOELECTRONIC ic pin diagram
Abstract: triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator
Text: Optoelectronic Devices In Brief . . . Motorola’s families of optoelectronic components encompass red and infrared GaAs emitters and silicon detectors that are well matched for a variety of applications. Optoisolators Motorola’s “Global” 6–Pin Dual In–line Package DIP
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MOC2A60-5
MOC2A60-10
02/Style
01/Style
MOTOROLA OPTOELECTRONIC ic pin diagram
triac driver opto moc3021
opto d207
MCT2E soic
D217 OPTO
IC 4N25 triac
730A-04
a4n33
opto triac moc3010
MOC3041 opto isolator
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TIP105
Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.
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TIP105/106/107
TIP100/101/102
TIP105
TIP106
TIP107
TIP105
TIP107
A 107 transistor
TIP106
transistor TIP105
transistor 107 A
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POWER TRANSISTOR TO-220 CASE TIP100
Abstract: RESISTORs full line TIP102 Darlington transistor
Text: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP100/101/102
TIP105/106/107
O-220
TIP100
TIP101
TIP102
POWER TRANSISTOR TO-220 CASE TIP100
RESISTORs full line
TIP102 Darlington transistor
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Untitled
Abstract: No abstract text available
Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
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2SD1788
Abstract: ITO-220 TP4L10
Text: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1788 Case : ITO-220 TP4L10 Unit : mm ± 4A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SD1788
ITO-220
TP4L10)
100mm
150mm
2SD1788
ITO-220
TP4L10
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TLP100
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107
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OCR Scan
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TIP100/101/102
TIP105/106/107
TIP100
TIP101
TIP102
TLP100
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102
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OCR Scan
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TIP105/106/107
TIP100/101/102
TIP105
TIP106
TIP107
TIP107
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102
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OCR Scan
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TIP105/106/107
TIP106
TIP107
TIP105
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101/102
TIP101
TIP102
TIP100
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TIP105
Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
TIP-106
TIP107
TIP106
transistor TIP105
NPN Transistor VCEO 80V 100V DARLINGTON
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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B 773 transistor
Abstract: ED1702N ED1702 TRANSISTOR ED-1702 ED1702L ED1702M ED1702 ed1802 transistor ed1702 ED1702 PHILIPS transistor
Text: Philips Semiconductors Product specification NPN general purpose transistor ED1702 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 25 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • General purpose switching and amplification.
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ED1702
ED1802.
100AMETER
ED1702K
ED1702L
ED1702M
ED1702N
ED17020
ED1702P
ED1702Q
B 773 transistor
ED1702 TRANSISTOR
ED-1702
ED1702
ed1802
transistor ed1702
ED1702 PHILIPS transistor
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transistor ac 132
Abstract: ED1802M 2813J J JB transistor ed1802 Transistor 774 774 to-92 transistor ed1802 ED-1702
Text: Philips Semiconductors Product specification PNP general purpose transistor ED1802 FEATURES PINNING • Low current max. 500 mA PIN • Low voltage (max. 25 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector • General purpose switching and amplification.
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ED1802
ED1702.
ED1802K
ED1802L
ED1802M
ED1802N
ED18020
ED1802P
ED1802Q
transistor ac 132
2813J
J JB transistor
ed1802
Transistor 774
774 to-92
transistor ed1802
ED-1702
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TIP 107
Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
T0-220
TIP100/101/102
TIP105
TIP106
TIP106
TIP107
-80mA
TIP105/106/107
TIP 107
transistor tip 107
transistor t0-220
TO 106 transistor base collector emitter
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transistor CR NPN
Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
Text: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current
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SC-74A)
2SC2411K)
2SA1036K)
transistor CR NPN
transistor cr marking
FMY6
412 pnp transistor
pnp transistor marking code 412
pnp transistor code 412
transistor CR pnp
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors b b 5 3 ^ 3 1 DDE6TES 756 APX Product specification BLV13 VHF power transistor M AUER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at T ^ = 25 °C in a common emitter test circuit. FEATURES • Gold metallization ensures excellent reliability.
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BLV13
bbS3131
MCD211
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mcd206
Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead
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BLV13
OT123
PINNING-SOT123
MCD210
MBA451
MCD211
mcd206
philips Trimmer 60 pf
BLV13
MCD211
C106W
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Philips fr 153 30
Abstract: BFQ135
Text: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum
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OT172A2
Philips fr 153 30
BFQ135
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Tip 107 C
Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
TIP100/101/102
TIP107
TIP105/106/107
Tip 107 C
transistor tip 107
e 616
E616
IP107
tip 105
tip 107
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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OCR Scan
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TIP100/101/102
TIP105
TIP106
TIP107
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