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Allegro MicroSystems LLC A19302PUBATN-RPE 2-WIRE ABS DIRECTION AND SPEED S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A19302PUBATN-RPE	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	A19302PUBATN-RPE					1 - 10 - 100 - 1000 - 10000 $1.09	Get Quote
Allegro MicroSystems LLC A19302PUBATN-RPE-A 2-WIRE ABS DIRECTION AND SPEED S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	A19302PUBATN-RPE-A	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	A19302PUBATN-RPE-A					1 - 10 - 100 - 1000 - 10000 $1.2	Get Quote
Laird Connectivity Inc PT1951TNRPTNRP CASSY, A195, RTNM, RTNM - Bag (Alt: PT1951TNRPTNRP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PT1951TNRPTNRP	Bag			25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Laird Connectivity Inc PT1958NTNRP CASSY, A195, NM, RTNM - Bag (Alt: PT1958NTNRP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PT1958NTNRP	Bag			17	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Laird Connectivity Inc G195TNRPI MOUNT,MGM,3/4,A195,RTNM - Bag (Alt: G195TNRPI)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	G195TNRPI	Bag			5	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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TNRP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TH4B Abstract: No abstract text available Text: PHAST-3N STM-1/STS-3/STS-3c SDH/SONET Overhead Terminator with Telecom Bus Interface TXC-06103 DATA SHEET • • • • • • • • • • • • • • • • • Bit-serial SDH/SONET line interface - Pseudo-ECL interface with clock recovery and synthesis	Original	TXC-06103 64-byte TXC-06103-MB TH4B	PDF
Untitled Abstract: No abstract text available Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.	Original	M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72	PDF
NT5TU128M8DE Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6	Original	NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE	PDF
busy tone detector Abstract: ampop FX663 FX663D4 FX663P3 ampop rail Text: CML Semiconductor Products Call Progress Decoder FX663 D/663/3 January 1999 1.0 • Features Decodes Call Progress Tones Worldwide covering: • • • • 1.1 Single and Dual Tones Fax and Modem Answer/Originate Tones Special Information Tones Fast 'US Busy' Tone Detector	Original	FX663 D/663/3 58MHz 16-Pin FX663 busy tone detector ampop FX663D4 FX663P3 ampop rail	PDF
W971GG6JB Abstract: 8X12 DDR2-667 DDR2-800 0A80 Text: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	W971GG6JB W971GG6JB 8X12 DDR2-667 DDR2-800 0A80	PDF
k4b2g1646q Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA	PDF
IS46TR Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM" Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        	Original	IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"	PDF
Untitled Abstract: No abstract text available Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.	Original	M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64	PDF
Untitled Abstract: No abstract text available Text: 3D Glasses 8-bit Flash Type MCU HT45FH3T Revision: V1.10 Date: �� May 17, 2013 HT45FH3T 3D Glasses 8-bit Flash Type MCU Table of Contents Features. 6	Original	HT45FH3T	PDF
Untitled Abstract: No abstract text available Text: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: �� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM	Original	HT67F30/HT67F40/HT67F50/HT67F60	PDF
Untitled Abstract: No abstract text available Text: Ultrasonic Park Assist 8-bit Flash MCU HT45F39 Revision: V1.00 Date: �� October 30, 2013 HT45F39 Ultrasonic Park Assist 8-bit Flash MCU Table of Contents Features. 5	Original	HT45F39	PDF
Untitled Abstract: No abstract text available Text: Enhanced I/O Flash Type MCU with EEPROM HT68F20/HT68F30/HT68F40/HT68F50/HT68F60 HT68FU30/HT68FU40/HT68FU50/HT68FU60 Revision: 1.80 Date: January 9, 2013 Contents Table of Contents Technical Document .8	Original	HT68F20/HT68F30/HT68F40/HT68F50/HT68F60 HT68FU30/HT68FU40/HT68FU50/HT68FU60	PDF
Untitled Abstract: No abstract text available Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W632GU6KB	PDF
Untitled Abstract: No abstract text available Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W631GU6KB	PDF

Untitled Abstract: No abstract text available Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z	Original	M14D5121632A	PDF
M14D1G166 Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.	Original	M14D1G1664A M14D1G166 m14d1g M14D1G1664A m14d1g16 DDRII esmt	PDF
NT5CB64M16AP-CF Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )	Original	NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC	PDF
W631GG6KB-12 Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I	PDF
Untitled Abstract: No abstract text available Text: W9712G6KB 2M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	W9712G6KB	PDF
W971GG6KB Abstract: W971GG6KB-3 W971GG6KB-25 W971GG6KB25 Text: W971GG6KB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4	Original	W971GG6KB W971GG6KB-3 W971GG6KB-25 W971GG6KB25	PDF
W631GU8KB15K Abstract: No abstract text available Text: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W631GU8KB W631GU8KB15K	PDF
W632GG6KB Abstract: W632GG6KB15I Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5	Original	W632GG6KB W632GG6KB15I	PDF
W3J512M32G Abstract: M41K256M32 Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:	Original	W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32	PDF
Untitled Abstract: No abstract text available Text: W3J512M64K-XPBX W3J512M64K-XLBX ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600 Mb/s  Differential clock terminations included	Original	W3J512M64K-XPBX W3J512M64K-XLBX	PDF

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TNRP Search Results

TNRP Price and Stock

Allegro MicroSystems LLC A19302PUBATN-RPE

Allegro MicroSystems LLC A19302PUBATN-RPE-A

Laird Connectivity Inc PT1951TNRPTNRP

Laird Connectivity Inc PT1958NTNRP

Laird Connectivity Inc G195TNRPI

TNRP Datasheets Context Search

TH4B

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NT5TU128M8DE

busy tone detector

W971GG6JB

k4b2g1646q

IS46TR

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M14D1G166

NT5CB64M16AP-CF

W631GG6KB-12

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W971GG6KB

W631GU8KB15K

W632GG6KB

W3J512M32G

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