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    MS-026

    Abstract: MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512L18P MT55L512V18P
    Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED ZBT SRAM 8Mb ZBT SRAM MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • • • •


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    PDF MT55L512L18P, MT55L512V18P, MT55L256L32P, MT55L256V32P, MT55L256L36P, MT55L256V36P 100-Pin 119-Pin 165-pin MT55L512L18P MS-026 MT55L256L32P MT55L256L36P MT55L256V32P MT55L256V36P MT55L512V18P

    MT55L256L18P1T-10A

    Abstract: MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal
    Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED ZBT SRAM 4Mb ZBT SRAM MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •


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    PDF MT55L256L18P1, MT55L256V18P1, MT55L128L32P1, MT55L128V32P1, MT55L128L36P1, MT55L128V36P1 August/7/00 119-pin 165-pin MT55L256L18P1 MT55L256L18P1T-10A MS-026 MT55L128L32P1 MT55L128L36P1 MT55L128V32P1 MT55L128V36P1 MT55L256L18P1T-10 MT55L256V18P1 84 FBGA thermal

    MT58L64L36P

    Abstract: MS-026 MT58L128L18P MT58L128V18P MT58L64L32P MT58L64V32P MT58L64V36P
    Text: NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM 2Mb SYNCBURST SRAM MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, SingleCycle Deselect FEATURES


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    PDF MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P June/21/00 x32/36 165-Pin March/3/00 MT58L64L36P MS-026 MT58L128L18P MT58L128V18P MT58L64L32P MT58L64V32P MT58L64V36P

    Untitled

    Abstract: No abstract text available
    Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.


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    PDF 119-pin MT55L512L18F

    Untitled

    Abstract: No abstract text available
    Text: 1Mb: 64K x 18, 32K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 1Mb SYNCBURST SRAM MT58L64L18D, MT58L32L32D, MT58L32L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


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    PDF MT58L64L18D, MT58L32L32D, MT58L32L36D MT58L64L18D

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


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    PDF MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F July/18/00 119-Pin 165-pin June/13/00

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation


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    PDF MT54V512H18E 512Kx18) MT54V512H18E

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE


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    PDF MT54V512H18A 165-Pin MT54V512H18A

    zbt sram 1994

    Abstract: No abstract text available
    Text: SRAM ADDENDUM Attention: Micron has discontinued its 119-pin BGA SRAM package. While we are currently working to update these data sheets, please note that this data sheet still shows the discontinued package. For further information please call 208-368-3900.


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    PDF 119-pin MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 MT55L256L18F1 zbt sram 1994

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • •


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    PDF MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F MT55L512L18F

    Untitled

    Abstract: No abstract text available
    Text: 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Ball FBGA Fast cycle times: 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation


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    PDF MT57V256H36P 165-Ball MT57V256H36P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •


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    PDF August/7/00 165-pin MT55L256L18F1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation


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    PDF MT57V256H36P

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


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    PDF 100-pin 165-pin 119-pin July/18/00 June/13/00 MT58L512L18F

    4c 8184

    Abstract: BGA 2J marking code 18-SE
    Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •


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    PDF Apr/6/00 Jan/18/00 119-pin Nov/11/99 MT55L1MY18F 4c 8184 BGA 2J marking code 18-SE

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE


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    PDF MT54V512H18A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED ZBT SRAM 36Mb ZBT SRAM MT55L2MY18P, MT55V2MV18P, MT55L1MY32P, MT55V1MV32P, MT55L1MY36P, MT55V1MV36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • High frequency and 100 percent bus utilization


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    PDF MT55L2MY18P 165-ball

    BW35

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


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    PDF MT57W1MH36J BW35

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect


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    PDF Apr/6/00 Jan/18/00 Nov/11/99 MT58L1MY18P MT58L1MY18P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 2 MEG X 8, 1 MEG X 18, 512K X 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-WORD BURST MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • • • • • • • • • • • • • • • • • • DLL circuitry for accurate output data placement


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    PDF MT57W1MH18C

    Untitled

    Abstract: No abstract text available
    Text: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD


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    PDF 100-pin 165-pin 119-Pin MT58L512L18F

    MT58L128L32

    Abstract: No abstract text available
    Text: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-PIN TQFP1 • Fast clock and OE# access times


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    PDF 165-pin 100-pin 119-Pin MT58L256L18P1 MT58L128L32

    Untitled

    Abstract: No abstract text available
    Text: 2Mb: 128K x 18, 64K x 32/36 3.3V I/O, PIPELINED ZBT SRAM 2Mb ZBT SRAM MT55L128L18P1, MT55L64L32P1, MT55L64L36P1 3.3V VDD, 3.3V I/O FEATURES • • • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization


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    PDF June/21/00 x32/36 165-Pin May/23/00 MT55L128L18P1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation


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    PDF 512Kx18) MT54V512H18E