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    TN 0780 Search Results

    TN 0780 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AMB0780L4RJ Renesas Electronics Corporation Advanced Memory Buffer Low Power for FB-DIMM Modules Visit Renesas Electronics Corporation
    AMB0780L4RJ8 Renesas Electronics Corporation Advanced Memory Buffer Low Power for FB-DIMM Modules Visit Renesas Electronics Corporation
    HS30780081 Amphenol Communications Solutions Backplane connectors,cable backplane ,Paladin 4X8 Cable, 30 AWG, 25 GHz Visit Amphenol Communications Solutions
    10007607-801-36LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 36 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    10007607-802-06LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Right Angled header ,Through Hole, Row Polarized ,Double row , 6 Positions ,2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
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    TN 0780 Price and Stock

    Samtec Inc TFSD-40-28-F-07.80-T-NDS

    Rectangular Cable Assemblies .050" Tiger Eye Double Row Discrete Wire Cable Assembly, Terminal
    Free Sample
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    Mouser Electronics TFSD-40-28-F-07.80-T-NDS
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    Samtec Inc TFSD-25-28-G-07.80-T-NDS

    Rectangular Cable Assemblies .050" Tiger Eye Double Row Discrete Wire Cable Assembly, Terminal
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TFSD-25-28-G-07.80-T-NDS
    • 1 $56.78
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    TN 0780 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TsE 151

    Abstract: simplex 4010 0n90 120C PM5372 "PCB CONNECTOR"
    Text: TSE Transmission Switch Element Datasheet Released PM5372 TSE TRANSMISSION SWITCH ELEMENT DATASHEET Proprietary and Confidential Released Issue 7: November, 2001 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use Document ID: PMC-1991258, Issue 7


    Original     		PDF PM5372 PMC-1991258, 39x39 TsE 151 simplex 4010 0n90 120C PM5372 "PCB CONNECTOR"

    Untitled

    Abstract: No abstract text available
    Text: TSE Data Sheet Preliminary PM5372 TSE Transmission Switch Element Data Sheet Proprietary and Confidential Preliminary Issue 6: August, 2001 Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use Document ID: PMC-1991258, Issue 6


    Original     		PDF PM5372 PMC-1991258, PMC-1991258 PMC-1990713 39x39

    TsE 151

    Abstract: TN-51 equivalent 7K27
    Text: 1: 41 PM TSE Transmission Switch Element Datasheet Released be r, 20 07 10 :3 PM5372 nd ay ,1 6S ep te m TSE HS IN C on Su TRANSMISSION SWITCH ELEMENT Proprietary and Confidential Released Issue 7: November, 2001 Do wn l oa de d by I HS Pa r ts Ma na g


    Original     		PDF PMC-1991258, PM5372 SPECTRA-2488 39x39 TsE 151 TN-51 equivalent 7K27

    Untitled

    Abstract: No abstract text available
    Text: 1: 34 AM TSE Transmission Switch Element Datasheet Released ar y, 20 03 08 :3 PM5372 es da y, 07 Ja nu TSE in er In co n Tu TRANSMISSION SWITCH ELEMENT Proprietary and Confidential Released Issue 7: November, 2001 Do wn lo ad ed by Pa rtM in er I nc of


    Original     		PDF PM5372 PMC-1991258, 39x39

    MCP NOR FLASH SDRAM elpida

    Abstract: "content addressable memory" precharge Ramp b001 EHB0010A1MA Spansion ddr ELPIDA DDR User s99pl
    Text: DATA SHEET 64Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0010A1MA Description DDR SDRAM Specifications The EHB0010A1MA is a MCP Multi Chip Package ; TM 64M bits flash memory organized the Spansion (S99PL064J0039) and the Elpida 512M bits DDR SDRAM in one package.


    Original     		PDF 512Mb EHB0010A1MA EHB0010A1MA S99PL064J0039) 151-ball 266Mbps M01E0107 E0950E30 MCP NOR FLASH SDRAM elpida "content addressable memory" precharge Ramp b001 Spansion ddr ELPIDA DDR User s99pl

    Spansion ddr

    Abstract: MCP NOR FLASH SDRAM elpida s99pl EHB0020A1MA ELPIDA DDR User
    Text: PRELIMINARY DATA SHEET 32Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0020A1MA Description DDR SDRAM Specifications The EHB0020A1MA is a MCP Multi Chip Package ; TM 32M bits flash memory organized the Spansion (S99PL032J0029) and the Elpida 512M bits DDR SDRAM in one package.


    Original     		PDF 512Mb EHB0020A1MA EHB0020A1MA S99PL032J0029) 151-ball 266Mbps M01E0107 E1017E20 Spansion ddr MCP NOR FLASH SDRAM elpida s99pl ELPIDA DDR User

    Untitled

    Abstract: No abstract text available
    Text: UCC25710 98-W LLC Resonant Half-Bridge 4-String LED Driver Design Review Application Report Literature Number: SLUA601 August 2011 Application Report SLUA601– August 2011 UCC25710 98-W LLC Resonant Half-Bridge 4-String LED Driver Design Review Texas Instruments


    Original     		PDF UCC25710 SLUA601 SLUA601â

    fsk modulation and demodulation

    Abstract: ASK DEMODULATOR circuit 433 SFE10.7MV 315 mhz crystal MURATA LQ Wideband FM demodulator
    Text: 7+ 315/433MHz FSK/FM/ASK Single-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator Low current consumption in active mode and very low standby current


    Original     		PDF 315/433MHz LQFP32 TH71101 fsk modulation and demodulation ASK DEMODULATOR circuit 433 SFE10.7MV 315 mhz crystal MURATA LQ Wideband FM demodulator

    Untitled

    Abstract: No abstract text available
    Text: 7+ 868/915MHz FSK/FM/ASK Single-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator Low current consumption in active mode and very low standby current


    Original     		PDF 868/915MHz LQFP32 TH71111

    fsk modulation and demodulation

    Abstract: murata 868 mhz filter
    Text: 7+ 868/915MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator


    Original     		PDF 868/915MHz LQFP32 TH71112 fsk modulation and demodulation murata 868 mhz filter

    bc 107 colpitts oscillator

    Abstract: ,double down conversion superheterodyne receiver Wideband FM demodulator 433 315 MHz RF PCB Receiver designing 2Mhz colpitts oscillator
    Text: 7+ 315/433MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator


    Original     		PDF 315/433MHz LQFP32 TH71102 bc 107 colpitts oscillator ,double down conversion superheterodyne receiver Wideband FM demodulator 433 315 MHz RF PCB Receiver designing 2Mhz colpitts oscillator

    HC-49SMD

    Abstract: smd transistor N2 1p H*49S transistor BC rx BC115 smd transistor nd 2e PLL FSK DEMODULATOR ,double down conversion superheterodyne receiver transistor 24 lq smd transistor
    Text: 7+ 315/433MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator


    Original     		PDF 315/433MHz LQFP44 TH7110 HC-49SMD smd transistor N2 1p H*49S transistor BC rx BC115 smd transistor nd 2e PLL FSK DEMODULATOR ,double down conversion superheterodyne receiver transistor 24 lq smd transistor

    smd transistor N2 1p

    Abstract: transistor BC rx std 7614 FBC 30 A bc 107 colpitts oscillator fsk modulation and demodulation TH701
    Text: 7+ 868/915MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator


    Original     		PDF 868/915MHz LQFP44 TH7111 smd transistor N2 1p transistor BC rx std 7614 FBC 30 A bc 107 colpitts oscillator fsk modulation and demodulation TH701

    FPT-48P-M19

    Abstract: No abstract text available
    Text: PRELIMINARY MARKETING REOUIREMENTS DOCUMENT AE0.31E MirrorFlashTM MEMORY CMOS 64M 4M x 16 BIT MBM29LP650U(H/L)M-90/11 • FEATURES • 0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standards


    Original     		PDF MBM29LP650U M-90/11 48-pin 63-ball MBM29LP650UM FBGA63. FPT-48P-M19

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-2E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball F0203

    Untitled

    Abstract: No abstract text available
    Text: MBM29DS163TE10 MBM29DS163BE10 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.


    Original     		PDF MBM29DS163TE10 MBM29DS163BE10 F0303

    FPT-48P-M19

    Abstract: FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is


    Original     		PDF DS05-20891-4E MBM29DS163TE/BE10 MBM29DS163TE/BE 48-pin 48-ball F0303 FPT-48P-M19 FPT-48P-M20

    Untitled

    Abstract: No abstract text available
    Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,


    Original     		PDF F0303

    Marking code vacc

    Abstract: FPT-48P-M19 FPT-48P-M20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in


    Original     		PDF DS05-20892-3E MBM29PDD322TE/BE 32M-bit, 48-pin 63-ball MBM29PDD322TE/BE F0206 Marking code vacc FPT-48P-M19 FPT-48P-M20

    h3 0925

    Abstract: 0925 h3 uc 8343 TV THOMPSON 29 DF 170 G AM29116 AM29116A AM29L116A Thompson TV circuit diagram USHA YJ 1100 6
    Text: / O O ts- / r~ Am29116A/Am29L116A/Am29116 H ig h -P e rfo rm a n c e 16-B it Bipolar M icrop ro cesso rs > 3 DISTINCTIVE CHARACTERISTICS Powerful Field Insertion/Extraction and Bit-Manipulation Instructions Optimized for High-Performance Controllers Excellent solution fo r applications requiring speed


    OCR Scan     		PDF Am29116A/Am29L116A/Am29116 16-Bit Am29116 100-ns time/10-MHz Am29116A Am29L116A AIS-WCP-15M-10/86-0 h3 0925 0925 h3 uc 8343 TV THOMPSON 29 DF 170 G Thompson TV circuit diagram USHA YJ 1100 6

    Untitled

    Abstract: No abstract text available
    Text: 10 3 \ + ( ~ ' 1 A CKT DIM, ' A" DIM." B ' C-+00 .4 5 SCKT S IZE IZE -.018 IX / (2.54) . too 1X21 IX 2 (2.54> . 100 ( 5 . 0 8 ) . 200 1X22 IX 3 ( 5 . 0 8 ) ,200 ( 7 . 6 2 ) . 300 1X23 IX 4 ( 7 . 6 2 ) , 300 (10, 16 ) ,400 EX24 IX 5 ( 1 0 ,1 6 ) .400 ( 1 2 ,7 0 )


    OCR Scan     		PDF SD-90120-001

    lm 7803

    Abstract: bsim3 bsim3 model bsim3 circuit model
    Text: RF-Distortion in Deep-Submicron CMOS Technologies R. van Langevelde, L.F. Tiemeijer, R.J. Havens, M.J. Knitel, R.F.M. Roes, P.H. Woerlee and D.B.M. Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands Phone: +31-40-2743926; Fax: +31-40-2743390; E-mail: ronald.van.langevelde@philips.com


    OCR Scan     		PDF 810-IEDM lm 7803 bsim3 bsim3 model bsim3 circuit model

    igfet

    Abstract: lm 7803 BSIM 3v3 ED-44 ED44 IEDM1993 bsim3v3
    Text: Accurate Drain Conductance Modeling for Distortion Analysis in MOSFETs R. van Langevelde and F.M. Klaassen Electronic Devices Group Eindhoven University of Technology Eindhoven, The Netherlands A bstract Present compact circuit-level MOSFET models fail to


    OCR Scan     		PDF ED-43, Vb-53 314-IEDM igfet lm 7803 BSIM 3v3 ED-44 ED44 IEDM1993 bsim3v3

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M3494 CMOS 1 6 X 8 CROSSPOINT WITH CONTROL MEMORY • LOW ON RESISTANCE typ. 60 £2 at V dd = 10 V ■ INTERNAL CO NTROL LATCHES ■ ANALOG SIGNAL SWING CAPABILITY EQUAL TO POWER SUPPLY VOLTAGE APPLIED ■ LESS THAN 1 % TO TAL DISTORT. AT 0 dBm


    OCR Scan     		PDF M3494 M3494 M34S4 H3494