TMS 3880
Abstract: No abstract text available
Text: FLANGED IMMERSION HEATERS FOR PROCESS WATER TMS Series B MADE IN USA ߜ Long Life Heating Elements with Stainless Steel 8% Nickel Sheath ߜ For Very Weak Solutions or Industrial Process Water ߜ Zinc Coated Steel Flange ߜ 6 to 72 kW ߜ 240 and 480 V, 1 and 3 Phase
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Original
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Inch-150
TMI-1236HE3/*
TMI-1248HE3/*
TMI-1260HE3/*
TMI-1272HE3/*
TM-3065/240/3P,
TM6125/240/3P,
TMS 3880
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PDF
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smd diode code PJ 1466
Abstract: IC 741 OPAMP DATASHEET a in4 733 SMD SOT23 transistor MARK 1e Diode smd code PJ 1466 datasheet opamp 741 pj 2309 smd diode irlm2502 semiconductors cross index ACS750
Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.3, November 2009 ispPAC Power Manager II Family Handbook Table of Contents November 2009 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 . 1-1
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Original
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HB1007
HB1007
ispPAC-POWR1220AT8
ispPAC-POWR1014/A
ispPAC-POWR607.
ispPAC-POWR607
ispPAC-POWR1014/A
smd diode code PJ 1466
IC 741 OPAMP DATASHEET
a in4 733
SMD SOT23 transistor MARK 1e
Diode smd code PJ 1466
datasheet opamp 741
pj 2309 smd diode
irlm2502
semiconductors cross index
ACS750
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PDF
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3M Touch Systems
Abstract: No abstract text available
Text: CY7C1163KV18, CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports
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CY7C1163KV18,
CY7C1165KV18
18-Mbit
CY7C1163KV18
550-MHz
3M Touch Systems
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1319KV18/CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth
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CY7C1319KV18/CY7C1321KV18
18-Mbit
CY7C1319KV18
333-MHz
CY7C1321KV18
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1163KV18/CY7C1165KV18 18-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • Separate independent read and write data ports
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Original
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CY7C1163KV18/CY7C1165KV18
18-Mbit
550-MHz
CY7C1165KV18
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1148KV18/CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.0 cycles:
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CY7C1148KV18/CY7C1150KV18
18-Mbit
450-MHz
CY7C1148KV18
CY7C1150KV18
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PDF
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3M Touch Systems
Abstract: No abstract text available
Text: CY7C1168KV18, CY7C1170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.5 cycles:
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CY7C1168KV18,
CY7C1170KV18
18-Mbit
CY7C1168KV18
550-MHz
3M Touch Systems
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1392KV18 CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 18-Mbit density 2 M x 8, 1 M × 18 CY7C1392KV18 – 2 M × 8 ■ 333-MHz clock for high bandwidth
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CY7C1392KV18
CY7C1393KV18
18-Mbit
CY7C1392KV18
333-MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1168KV18/CY7C1170KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.5 cycles:
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CY7C1168KV18/CY7C1170KV18
18-Mbit
550-MHz
CY7C1168KV18
CY7C1170KV18
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1392KV18 CY7C1393KV18 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture 18-Mbit DDR II SIO SRAM Two-Word Burst Architecture Features Configurations • 18-Mbit density 2 M x 8, 1 M × 18 CY7C1392KV18 – 2 M × 8 ■ 333-MHz clock for high bandwidth
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Original
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CY7C1392KV18
CY7C1393KV18
18-Mbit
333-MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1319KV18, CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth
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CY7C1319KV18,
CY7C1321KV18
18-Mbit
CY7C1319KV18
333-MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1319KV18, CY7C1321KV18 18-Mbit DDR II SRAM Four-Word Burst Architecture 18-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 18-Mbit density 1 M x 18, 512 K × 36 CY7C1319KV18 – 1 M × 18 ■ 333-MHz clock for high bandwidth
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CY7C1319KV18,
CY7C1321KV18
18-Mbit
CY7C1319KV18
333-MHz
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PDF
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smd Pj 2479
Abstract: pj 2309 diode pj 2309 smd diode smd zener diode color code ISPPACPOWER1208 cny17 03 FDS6679 "pin-compatible" Cross Reference sot23 HB1007 SMD PJ 3236
Text: ispPAC Power Manager II Family Handbook HB1007 Version 01.1, June 2008 ispPAC Power Manager II Family Handbook Table of Contents June 2008 Handbook HB1007 Section I. ispPAC Power Manager II Family Data Sheets ispPAC-POWR1220AT8 Data Sheet . 1-1
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Original
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HB1007
HB1007
ispPAC-POWR1220AT8
ispPAC-POWR1014/A
ispPAC-POWR607
LA-ispPAC-POWR1014/A
AN6078,
smd Pj 2479
pj 2309 diode
pj 2309 smd diode
smd zener diode color code
ISPPACPOWER1208
cny17 03
FDS6679 "pin-compatible"
Cross Reference sot23
SMD PJ 3236
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PDF
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2894043
Abstract: 3M Touch Systems
Text: CY7C1148KV18, CY7C1150KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 18-Mbit density (1 M x 18, 512 K × 36) With Read Cycle Latency of 2.0 cycles:
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Original
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CY7C1148KV18,
CY7C1150KV18
18-Mbit
CY7C1148KV18
450-MHz
2894043
3M Touch Systems
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PDF
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marking codes all16
Abstract: 1au41 298029
Text: Intel WB1501 High-Density SDH/SONET STM-1/STS-3 Framing Processor Datasheet Order Number: 274015-002 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
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WB1501
5/99-064R2,
5/99-066R1,
5/00-126R2,
5/00-129R1,
marking codes all16
1au41
298029
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PDF
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24C024
Abstract: WB1510 298029 RD237
Text: Intel WB1510 SDH/SONET 2 x STM-4/STS-12 or STM-1/STS-3 Framer Datasheet Order Number: 274042-003 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS
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Original
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WB1510
STM-4/STS-12
5/99-064R2,
5/99-066R1,
5/00-126R2,
5/00-129R1,
24C024
WB1510
298029
RD237
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PDF
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WB1500
Abstract: 298029
Text: Intel WB1500 SDH/SONET Superscalable STM-16/STS-48 Framer Datasheet Order Number: 274011-002 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS
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Original
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WB1500
STM-16/STS-48
5/99-064R2,
5/99-066R1,
5/00-126R2,
5/00-129R1,
WB1500
298029
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PDF
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MV64460
Abstract: HC74 G4 C438 capacitor SDA 5450 c48 31F4 R731 ABB C564 transistor C546 C587 MR 4710
Text: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750GX ADDRESS BUS 4 POWERPC 750GX DATA BUS 5 POWERPC 750GX CONTROL, JTAG 6 POWERPC 750GX POWER
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750GX
38P1931
38P1931
MV64460
HC74 G4
C438 capacitor
SDA 5450 c48
31F4
R731
ABB C564
transistor C546
C587
MR 4710
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PDF
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MV64460
Abstract: 31F4 TP014 TEA 2025 equivalent I384 header10x2 transistor c548 413 mr 6710 30B2 diode af4 c448 100 12p
Text: CR-1 : @BUCKEYE_PROJ_LIB.BUCKEYE2 SCH_1 :PAGE1 8 6 7 5 4 3 2 1 TABLE OF CONTENTS PAGE - CONTENTS 1 TABLE OF CONTENTS, POWER SUPPLY LIST 2 BLOCK DIAGRAM 3 POWERPC 750FX ADDRESS BUS 4 POWERPC 750FX DATA BUS 5 POWERPC 750FX CONTROL, JTAG 6 POWERPC 750FX POWER
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750FX
38P1904
38P1904
MV64460
31F4
TP014
TEA 2025 equivalent
I384
header10x2
transistor c548 413
mr 6710
30B2 diode
af4 c448 100 12p
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS320C6412 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS219F April 2003 − Revised April 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C6412
SPRS219F
SPRS219E
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS320C6412 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS219F April 2003 − Revised April 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C6412
SPRS219F
SPRS219E
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS320C6412 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS219F April 2003 − Revised April 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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Original
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TMS320C6412
SPRS219F
SPRS219E
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS320C6412 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS219G April 2003 − Revised October 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C6412
SPRS219G
SPRS219F
SPRS219G
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PDF
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dd260
Abstract: No abstract text available
Text: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Type Vrrm VrSM = Vrrm + 100 V Ifsm / i 2dt 10 ms, tv] max 10 ms, Wjmax A kA2s Ifrmsm A V Ifavm/Ic A/°C RthCK t'.'j max °C/W °c VfTO rT Rthjc tv,= tv, max ‘v,=
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OCR Scan
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4600s=
80ld02Cl
600/TOO
34G32
dd260
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PDF
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