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Text: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a
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OCR Scan
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TLP580,
TLP58I
TLP580
TLP581
1200Vdc
750Vac
900Vdc
DIN40045
0D1747Ã
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TLP581
Abstract: TLP580 100KC E67349 VDE0730-2P
Text: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,
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OCR Scan
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PDF
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TLP580,
TLP58
TLP580
TLP581
1200Vdc
750Vac
900Vdc
DIN40045
100KC
E67349
VDE0730-2P
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