Untitled
Abstract: No abstract text available
Text: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA
|
Original
|
PDF
|
TLN1108
18mW/sr
100mA
100mA
|
Untitled
Abstract: No abstract text available
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
|
Original
|
PDF
|
TLN110
TPS703
|
TLN110
Abstract: TPS703
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
|
Original
|
PDF
|
TLN110
TPS703
|
Untitled
Abstract: No abstract text available
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead(Pb)-Free Remote−control Systems Opto−electronic Switches Unit: mm • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
|
Original
|
PDF
|
TLN110
TPS703
|
TCD2959BFG
Abstract: TCD1709DG TCD2964BFG TCD2713DG TCD2716DG tcd2563bfg TCD1708DG tcd2704dg-1 TCD2955BFG TCD2959
Text: Sensors/Image Pickup Devices Photosensors z 272 Image Sensors z 276 271 Photosensors Infrared LEDs and Visible LEDs for Sensor Light Sources Electrical/Optical Characteristics Ta = 25°C Part Number with Rank Part Number TLN108(F) TLN201(F) TLN105B(F) TLN110(F)
|
Original
|
PDF
|
O-18CAN
ET8E99-AS
TCD2959BFG
TCD1709DG
TCD2964BFG
TCD2713DG
TCD2716DG
tcd2563bfg
TCD1708DG
tcd2704dg-1
TCD2955BFG
TCD2959
|
TLN110
Abstract: TPS703
Text: TLN110 F TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Unit: mm Remote−control Systems Opto−electronic Switches • High radiant intensity: IE = 30mW / sr (typ.) • Excellent radiant−intensity linearity. Modulation by pulse operation
|
Original
|
PDF
|
TLN110
TPS703
|
TLN110
Abstract: TPS703 46C4
Text: TLN110 F GaAs赤外発光 東芝赤外LED TLN110(F) ○ 各種リモコン機器 ○ 光電スイッチ 単位: mm • 放射強度が大きい。: IE=30mW / sr(標準) • 放射強度の直線性が良くパルス動作、高周波による変調ができます。
|
Original
|
PDF
|
TLN110
TPS703
100Hz
100mA
10kHz
500Hz
200Hz
46C4
|
TOLD2000fDA
Abstract: TCD2703ADG TCD1709DG TCM8230 tyco igbt module 25A TOLD2000MDA TLSU225 TOLD2000 TLP250 MOSFET DRIVER application note TLYH180PF
Text: Optical Semiconductor Devices Visible Laser Diodes z 146 Visible LEDs z 147 Photo Sensors z 156 Photo Couplers & Photo Relays z 159 Fiber-Optic Devices TOSLINK z 186 Image Sensors z 190 145 Visible Laser Diodes Maximum Ratings (Tc = 25°C) Optical output
|
Original
|
PDF
|
40PIN
24PIN
03/3Q
35PIN
15PIN
TCM8210MD
TCM8230MD
24-pin
20-pin
TOLD2000fDA
TCD2703ADG
TCD1709DG
TCM8230
tyco igbt module 25A
TOLD2000MDA
TLSU225
TOLD2000
TLP250 MOSFET DRIVER application note
TLYH180PF
|
Untitled
Abstract: No abstract text available
Text: TPS610 F TOSHIBA Photo Transistor Silicon NPN Epitaxial Planar TPS610(F) Lead Free Product Photoelectric Counter Unit in mm Various Kinds Of Readers Position Detection • φ5mm epoxy resin package • High sensitivity: IL = 250µA(typ.) • Half value angle: θ1/2 = ±8° (typ.)
|
Original
|
PDF
|
TPS610
|
Toshiba phototransistor
Abstract: No abstract text available
Text: TPS611 F TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Lead(Pb)-Free Photoelectric Counter Various Kinds Of Readers Position Detection Unit in mm • φ5mm epoxy resin package(black) • High sensitivity: IL = 120 A(typ.) • Half value angle: θ1/2 = ±8°(typ.)
|
Original
|
PDF
|
TPS611
Toshiba phototransistor
|
Untitled
Abstract: No abstract text available
Text: TPS611 F TOSHIBA Photo Transistor Silicon NPN Epitaxial Planar TPS611(F) Lead Free Product Photoelectric Counter Unit in mm Various Kinds Of Readers Position Detection • φ5mm epoxy resin package(black) • High sensitivity: IL = 120µA(typ.) • Half value angle: θ1/2 = ±8°(typ.)
|
Original
|
PDF
|
TPS611
|
led 5050
Abstract: TLN100 p832 TLN1050 TLN1000 photo sensor TLN1108 TLN108 TLN110 TLN117
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ 光センサ S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / Contents 1. 品番索引 …………………………………………… 2
|
Original
|
PDF
|
BCJ0028G
BCJ0028F
led 5050
TLN100
p832
TLN1050
TLN1000
photo sensor
TLN1108
TLN108
TLN110
TLN117
|
TC4009BP
Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Text: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
|
Original
|
PDF
|
050106CH1
TLP1025
TLP1029
TLP1033A
TLP1034
TLP1201A
TLP1201A
TLP1204
TC4009BP
DNP319
tps607
TLP1230
TLP1200
GP1S093HCZ0F
SG2751
2SC1959
IS471FE
PT380F
|
SP900
Abstract: TLN110 TPS611 TOSHIBA PHOTOTRANSISTOR SILICON NPN
Text: TPS611 F TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS611(F) Photoelectric Counter Various Kinds Of Readers Position Detection Unit in mm • φ5mm epoxy resin package(black) • High sensitivity: IL = 120 A(typ.) • Half value angle: θ1/2 = ±8°(typ.)
|
Original
|
PDF
|
TPS611
SP900
TLN110
TOSHIBA PHOTOTRANSISTOR SILICON NPN
|
|
|
"Smoke Sensor"
Abstract: TLN110 TPS703
Text: TLN110 TOSHIBA TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH • • High radiant intensity : Ig = 30mW / sr TYP. Excellent linearity of radiant intensity and modulation by pulse
|
OCR Scan
|
PDF
|
TLN110
TPS703
100Hz
200Hz
1000c
200mW/sr
300mA,
100//S
"Smoke Sensor"
TLN110
|
TLP806
Abstract: TLP802 tlp850 TLP805 TLP852 TLRA280 photo transistor application TPS833 TLP816 TLP907
Text: 5 . Classification Guide for Photo Sensor Packages •E m itter and D etecto r Type w ith To-18 Lens i3 m m Resin #>m m Resin To-18 Flat iffim Appearance .ifn H E ifpjffef • ' /J P * ' / 'jifo, TLN110 TLN 115A TLN 205 TLN 221 TLN 222 TLN 223 TLN 224 TLN 227
|
OCR Scan
|
PDF
|
To-18
TLN110
TLN101A
TLN108
TLN201
TLN102
TLN103A
TLN208
TLN119
TLP806
TLP802
tlp850
TLP805
TLP852
TLRA280
photo transistor application
TPS833
TLP816
TLP907
|
Untitled
Abstract: No abstract text available
Text: GaAs Infrared E m itter TLN110 A pplications • Remote Control System • Smoke Sensor oo + I • Optical Switch Features • High Radiant Intensity : lE= 30mW / sr TYP. 0-5 ± 0 .1 • Capable of Pulse Operation • Recommended for Use with the TPS703 in Remote
|
OCR Scan
|
PDF
|
TLN110
TPS703
98-4LEDS
|
TLP805
Abstract: TLP806 TLP834 TLRA280
Text: lü.General Index TYPE No. TLN101A TLN102 TLN103A TLN104 TLN104 LB TLN105B TLN107A TLN108 TLN110 TLN113 TLN115A TLN117 TLN119 TLN201 TLN203 TLN205 TLN208 TLN210 TLN211 TLN212 TLN221 TLN222 TLN223 TLN224 TLN225 TLN226 TLN227 TLP507A TLP800A TLP801A TLP802
|
OCR Scan
|
PDF
|
TLN101A
TLN102
TLN103A
TLN104
TLN105B
TLN107A
TLN108
TLN110
TLN113
TLP805
TLP806
TLP834
TLRA280
|
TLN110
Abstract: TPS703
Text: TLN110 TO SH IBA TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 INFRARED LED FOR REMOTE-CONTROL SYSTEMS Unit : mm REMOTE-CONTROL SYSTEMS resin build-up • High radiant intensity : Ie = 30mW / sr typ.) • Excellent radiant-intensity linearity. Modulation by pulse
|
OCR Scan
|
PDF
|
TLN110
30mW/sr
TPS703
TLN110
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TLN110 TOSHIBA INFRARED LED Ti • n m 'm GaAs INFRARED EMITTER 11 n m m Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH • High radiant intensity ; Ig - 30mW / sr TYP. • Excellent linearity of radiant intensity and modulation by pulse
|
OCR Scan
|
PDF
|
TLN110
TPS703
|
Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS611 A pplications • Photo Sensor • Photoelectric Counter • Various Kinds of Readers • Position Detection • Remote Controls Features • 05mm Epoxy Resin Package • High Sensitivity: lL= 120pA Typ. • Half Value Angle: 01/2= ± 8° (Typ.)
|
OCR Scan
|
PDF
|
TPS611
120pA
TLN110
TLN205
98-4LEDS
|
TLN110
Abstract: TLN205 TPS611
Text: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 Unit in mm FOR PHOTO SENSOR PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • • • • • <f>5mm epoxy resin package black High sensitivity :I l = 12(V*A(TYP.)
|
OCR Scan
|
PDF
|
TPS611
TLN110
TLN205
TLN110
TPS611
IL-99
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • 05mm epoxy resin package black • High sensitivity • H alf value angle : d±= ± 8° (TYP.)
|
OCR Scan
|
PDF
|
TPS611
TPS61
TLN110
TLN205
|
Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS610 A pplications • PhotoSensor • Photoelectric Counter • Various Kinds of Readers * Position Detection • Remote Controls Features • 05mm Epoxy Resin Package » High Sensitivity: lL= 250|iA Typ. • Half Value Angle: QVi = ± 8° (Typ.)
|
OCR Scan
|
PDF
|
TPS610
TLN110
TLN205
98-4LED
|
