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Catalog Datasheet	MFG & Type	Document Tags	PDF
TL817 Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in	Original	PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805	PDF
C909 Abstract: tL920 TL823 TL817 PTFB241402F Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in	Original	PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817	PDF
TL817 Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in	Original	PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945	PDF
TL872 Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840 Text: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.	OCR Scan		PDF