TL817
Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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PTFB241402F
PTFB241402F
H-37248-4
TL817
TL934
TL804
TL802
TL902
TL941
TL928
tl945
TL84
TL805
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C909
Abstract: tL920 TL823 TL817 PTFB241402F
Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in
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PTFB241402F
PTFB241402F
H-37248-4
C909
tL920
TL823
TL817
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TL817
Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in
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PDF
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PTFB241402F
PTFB241402F
H-37248-4
TL817
TL801
TL804
TL802
c901 transistor
transistor c904
TL944
TL902
transistor c905
tl945
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TL872
Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840
Text: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.
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