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    TL104 Search Results

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    TL104 Price and Stock

    Brady Worldwide Inc PTL-10-437

    LABEL, 0.25 IN H X 0.75 IN W
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    DigiKey PTL-10-437 Bulk 1
    • 1 $147.33
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    Master Electronics PTL-10-437 1
    • 1 $116.32
    • 10 $111.71
    • 100 $111.71
    • 1000 $111.71
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    Ohmite Mfg Co TL104K100R

    RES CHAS MNT 100 OHM 10% 158W
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    Newark TL104K100R Bulk 24
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    Master Electronics TL104K100R 4
    • 1 $46.58
    • 10 $45.88
    • 100 $31.47
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    Brady Worldwide Inc PTL-10-425

    LABEL, 0.25 IN H X 0.75 IN W
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    DigiKey PTL-10-425 Bulk 1
    • 1 $60.72
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    Newark PTL-10-425 SPOOL 1
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    Ohmite Mfg Co TL104K500R

    RES CHAS MNT 500 OHM 10% 158W
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    Master Electronics TL104K500R 1
    • 1 $46.58
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    • 100 $31.47
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    Brady Worldwide Inc PTL-10-427

    LABEL 0.75"HX0.25"W WHT 1=750PCS
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    DigiKey PTL-10-427 Bulk 1
    • 1 $61.6
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    Newark PTL-10-427 SPOOL 1
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    Find more TL104 price and stock on Findchips.com

    TL104 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TL104K100R Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 100 OHM 10% 158W Original PDF
    TL104K10R0 Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W Original PDF
    TL104K10R0C Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W Original PDF
    TL104K10R0CE Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W Original PDF
    TL104K2K20 Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 2.2K OHM 10% 158W Original PDF
    TL104K33R0 Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 33 OHM 10% 158W Original PDF
    TL104K500R Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 500 OHM 10% 158W Original PDF

    TL104 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL71

    Abstract: TL88 TL122
    Text: Modular Heat Sinkable Thick Film Power A B 0.20" 5.10 mm SPECIFICATIONS Material Resistive Element: Thick Film on Alumina Housing: Aluminum Insulators: Glass reinforced high temperature Valox Terminals: Tinned brass Electrical Power Range: 27 – 275 watts


    Original     		VDC/2500 Mohm/500V TL122 1-866-9-OHMITE TL71 TL88 TL122 PDF

    Untitled

    Abstract: No abstract text available
    Text: TL Series Heat Sinkable Thick Film Power Resistors A B 0.20" 5.10 mm C* 0.25" 6.3 mm Profile 1.01" 25.7 mm 0.98" 25 mm *For adjacent taps, C = 0.665" 16.9mm Ohm Range A (mm) Operating Dielectric B Voltage Withstanding (mm) VAC Voltage VAC 0.3 - 1 Meg 1.0 - 2 Meg


    Original     		TL104 TL122 1-866-9-OHMITE PDF

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147 PDF

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND PDF

    TL1 series

    Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07
    Text: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625


    Original     		TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 PDF

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    TL235

    Abstract: No abstract text available
    Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency


    Original     		PTVA030121EA PTVA030121EA H-36265-2 TL235 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PTFA091503EL PTFA091503EL 150-watt, H-33288-6 PDF

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1 PDF

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235 PDF

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PTFB212507SH PTFB212507SH 200-watt PDF

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239 PDF

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205 PDF

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 PDF

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 PDF

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152 PDF

    fet 4712

    Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT
    Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990


    Original     		PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT PDF

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original     		PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X PDF

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 PDF

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA PDF

    hy 1418

    Abstract: tl117 tl111
    Text: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150


    Original     		TL1-01 TL1-02 TL1-03 TL1-04 TL1-05 TL1-06 TL1-07 TL1-08 TL1-09 TL1-10 hy 1418 tl117 tl111 PDF

    VMMK-1225

    Abstract: lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B
    Text: VMMK-1225 Using the VMMK-1225 Wafer Scale Packaged Enhancement Mode PHEMT in a Low Noise Amplifier for the 10 to 13 GHz Frequency Range Application Note 5406 Introduction Circuit Topology The VMMK-1225 is a low noise 200 u gate width device using Avago Technologies industry leading Enhancement


    Original     		VMMK-1225 VMMK-1225 VMMK-1225. TL105 TL104 AV02-1511EN lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B PDF

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2 PDF