ne gJ8
Abstract: NE j eS8
Text: PS/G Single Digit ESR / RoHS Compliant Series Q FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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100kHz
D0G477M7
ne gJ8
NE j eS8
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PSGD0E687M7
Abstract: ne gJ8 nec en8 nec es8 NEC Tokin ultra low esr NE K eJ8 nec gJ8
Text: PS/G Single Digit ESR / RoHS Compliant Series • FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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9653TCAVOL12E1006E0
PSGD0E687M7
ne gJ8
nec en8
nec es8
NEC Tokin ultra low esr
NE K eJ8
nec gJ8
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nec en8
Abstract: NE J eN8 NE K eJ8 ne v en8 ne ej8 ne gJ8 nec es8 nec gJ8 ne u en8 NEC Tokin ultra low esr
Text: PS/G Single Digit ESR / RoHS Compliant Series • FEATURE • Lead-free type. RoHS Compliant. • Extreme low ESR 7mhom and excellent noise absorption performance. • High capacitance and ultra low ESR based upon on our original Conductive Polymer technology.
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9653TCAVOL11E1002E1
nec en8
NE J eN8
NE K eJ8
ne v en8
ne ej8
ne gJ8
nec es8
nec gJ8
ne u en8
NEC Tokin ultra low esr
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nec en8
Abstract: ne gJ8 NE b eN8 NE K eJ8 NEC Tokin ultra low esr -20/nec en8 ne ej8 nec es8 date code marking NEC
Text: PS/G Single Digit ESR / RoHS Compliant Series í FEATURE b/HDGIUHH W\SH 5R+6 &RPSOLDQW b [WUHPH ORZ (65 PKRP DQG H[FHOOHQW QRLVH DEVRUSWLRQ SHUIRUPDQFH bHigh capacitance and ultra low ESR based upon on our original Conductive Polymer technology. b6DPH RXWHU GLPHQVLRQ DQ FRQYHQWLRQDO 36/ VHULHV
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PSGD0E477M7
PSGD0G477M7
9653TCAVOL13E1106E1
nec en8
ne gJ8
NE b eN8
NE K eJ8
NEC Tokin ultra low esr
-20/nec en8
ne ej8
nec es8
date code marking NEC
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irf710 datasheet
Abstract: IRF710 and its equivalent IRF710 TB334
Text: IRF710 Data Sheet June 1999 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRF710
O-220AB
irf710 datasheet
IRF710 and its equivalent
IRF710
TB334
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2N2324
Abstract: 2N2323 JANTX application 2N2323 2N2323 2n2329s 2N2326S 2N2323A 2N2326 JANTX 2N2326 transistor U4
Text: INCH-POUND MIL-PRF-19500/276H w/AMENDMENT 1 24 November 2009 SUPERSEDING MIL-PRF-19500/276H 22 March 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/276H
2N2323,
2N2324,
2N2326,
2N2328,
2N2329,
2N2323A,
2N2324A,
2N2326A,
2N2324
2N2323 JANTX
application 2N2323
2N2323
2n2329s
2N2326S
2N2323A
2N2326
JANTX 2N2326
transistor U4
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PDF
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Male Header
Abstract: Female Header 5MM PITCH PIN STRIP HEADER RIGHT ANGLE cuzn30 235L 093L sn1002
Text: A P Products GmbH 2,54 mm Pitch Headers Datasheets Male and Female Header 7/2008 A P Products GmbH Bäumlesweg 21 71093 Weil im Schönbuch Germany Tel: +49-7157-5348-0 Fax: +49-7157-5348-39 Web: www.ap-products.de E-mail: info@ap-products.de A P Products Ltd.
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D 4206 TRANSISTOR
Abstract: transformer step up step down transformer 2N1874A 1N457 1N540 2N1870A 2N1871A 2N1872A 2N1874A JAN
Text: INCH-POUND MIL-PRF-19500/198E 25 March 2008 SUPERSEDING MIL-PRF-19500/198D 4 September 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS, TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A, JAN Inactive for new design after 4 September 2007.
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MIL-PRF-19500/198E
MIL-PRF-19500/198D
2N1870A,
2N1871A,
2N1872A,
2N1874A,
MIL-PRF-19500.
D 4206 TRANSISTOR
transformer step up
step down transformer
2N1874A
1N457
1N540
2N1870A
2N1871A
2N1872A
2N1874A JAN
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 July 2000. INCH-POUND MIL-PRF-19500/198C 27 April 2000 SUPERSEDING MIL-PRF-19500/198B 16 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTORS
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MIL-PRF-19500/198C
MIL-PRF-19500/198B
2N1870A,
2N1871A,
2N1872A
2N1874A
MIL-PRF-19500.
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Untitled
Abstract: No abstract text available
Text: SIEMENS Intelligent Sixfold Low-Side Switch TLE 4226 G Bipolar-IC Features • • • • • • • • • • • Quad 50 mA outputs Dual 500 mA outputs Operating range Vs = 5 V ± 5 % Output stages with power limiting Open-collector outputs Shorted load protected within operating range
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067000-A9118
P-DSO-24-3
3Sb05
IE001153
fl235b05
flE35
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tl 4226 G
Abstract: No abstract text available
Text: 3.3V CMOS 20-BIT TRANSPARENT LATCHES IDT74ALVCH16841 IDT74ALVCH162841 IDT74ALVC16841 ADVANCE INFORMATION FEATURES: DESCRIPTION: • Common features: The ALVCH16841 20-bit transparent transparent D-type latches are built using advanced dual metal CMOS technol
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20-BIT
IDT74ALVCH16841
IDT74ALVCH162841
IDT74ALVC16841
ALVCH16841
20-bit
10-bit
ALVCH16x841
tl 4226 G
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PDF
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tl 4226 G
Abstract: PL021
Text: National Semiconductor DM74197 Presettable Binary Counters General Description The ’ 197 ripple counter contains divide-by-two and divideby-eight sections which can be combined to form a modulo16 binary counter. State changes are initiated by the tailing
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DM74197
modulo16
TL/F/9784-2
TL/F/9784-3
tl 4226 G
PL021
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2N7080
Abstract: No abstract text available
Text: 2N7080 C T SiEconix JJm in c o rp o ra te d P-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS (V) rDS(ON) (Cl) •d (A) -20 0 0.500 -9 .5 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1
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2N7080
-254A
2N7080
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tl 4226 G
Abstract: No abstract text available
Text: ^National l Semiconductor U 54F/74F280 9-Bit Parity Generator/Checker General Description Features The ’F280 is a high-speed parity g e n e ra to r/ch e cke r th a t ac- • G uaranteed 4000V m inim um ESD prote ction c e pts nine bits o f input d ata and d e te cts w he th e r an even or
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54F/74F280
tl 4226 G
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DM8131N
Abstract: DM7131 DM7131J J16A N16A
Text: DM7131/DM8131 National Semiconductor Corporation DM7131/DM8131 6-Bit Unified Bus Comparator General Description Features The DM7131/DM8131 compares two binary words of twoto-six bits in length and indicates matching bit-for-bit of the two words. Inputs for one word are 54/74 series-compatible
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DM7131/DM8131
DM71/8131
DM8131N
DM7131
DM7131J
J16A
N16A
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lm 4192
Abstract: No abstract text available
Text: ,7 TERMINAL STRIPS STANDARD BINDING POST STRIPS MATERIAL SPECIFICATIONS FOR ALL BINDING POST STRIPS FIBERGLASS:Reinforced Polyester NEMA Grade GPO-3 rated fo r300° F. 155°C . GEE:Glass Epoxy, MIL P-18177 tem p., 300° F. Max. typeG-10 PBE: Paper base electrical. FED. LP-513
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P-18177
typeG-10
LP-513
26x169
29x44
44x64
44x84
44x169
lm 4192
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NJM455BM
Abstract: NJM4559 4559 S JM4559 NJM4 4558 NJM4558 NJM4558L NJM4559D NJM4559L
Text: NJM4558/4559 NJM741cDA*g| 5£PNP h 7 > y X ^ l ; f i , L ¡tjiSifig iflHls&T', m W & V A t i W t t f m '- 'T - ’i . r j i ' i ' - { y ’t l t , i f c l t ifiJtsffl i I T S I T ' T , NJM4559 Ü , NJM4558 O T & J i & T 'i S C J a » ¡ f è ' f t t f f c * > '< £ * 2 f g g <
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NJM741cDA
54-PNP
NJM4559
NJM4558
NJM4S58D
NJM4559D
NJM455BM
NJM4559M
NJM4559V
NJM4558L
4559 S
JM4559
NJM4
4558
NJM4559L
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PDF
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DM8131N
Abstract: DM8131 DM7131 DM7131J J16A N16A
Text: DM7131/DM8131 National Semiconductor Corporation DM7131/D M 8131 6-Bit Unified Bus Comparator General Description Features The DM7131/DM8131 compares two binary words of twoto-six bits in length and indicates matching bit-for-bit of the two words. Inputs for one word are 54/74 series-compatible
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DM7131/DM8131
DM71/8131
DM8131N
DM8131
DM7131
DM7131J
J16A
N16A
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PDF
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DM8131
Abstract: No abstract text available
Text: DM7131/DM8131 National Semiconductor Corporation DM7131/D M 8131 6-Bit Unified Bus Comparator General Description Features The DM7131/DM8131 compares two binary words of twoto-six bits in length and indicates matching bit-for-bit of the two words. Inputs for one word are 54/74 series-compatible
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DM7131/DM8131
DM71/8131
DM8131
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PDF
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mic 4227
Abstract: T8614
Text: ÛUALLTY SEMICONDUCTOR INC 41E D QSFCT861/2/3/4T, • 74bbflD3 0 0 G 0 7 S G 1 ■ 2 S I 2861/2/3/4T T ~ 5 2 r 3 & ~ l3 Q S 54/74F C T 861T High Speed CMOS Bus Interface Q qs54 /74 fc t 862 t SiïîiïiESïSSïï 9 & 10-bit Transceivers Q S 54/74F C T 864T
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74bbflD3
QSFCT861/2/3/4T,
2861/2/3/4T
10-bit
54/74F
2862T
2863T
mic 4227
T8614
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PDF
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICON» LOGIC blE J> bSüllEE 0G 74clt.l O'ìa INSCI CO <0 <0 80 National mm Semiconductor 74AC399»54ACT/74ACT399 Quad 2-Port Register General Description Features The 'AC/ACT399 is the logical equivalent of a quad 2-input multiplexer feeding into four edge-triggered flip-flops. A
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74AC399
54ACT/74ACT399
AC/ACT399
ACT/ACT399
74ACT
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DD313
Abstract: PS 4206 75-IT 2N2Q 2U06 2K2029 TRANSISTOR D1651 2N2027 2N2029 d0313
Text: UUU MIL SPECS □□□□125 DD313S2 S MILS M iL - S - 19500/2030 it 14 m Ì967 SUPfcRSEDlM MIL”S-19500/203C 3 March 1370 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTORS, REVERSE BLOCKING, SILICON, TYPES 2N2024, 2N2Q25, 2N2Q27, 2N2029, 2N203Q,
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DD313S2
MIL-S-19500/2Q3C
2NZ024,
2N2Q25,
2N2027,
2N2029,
2N203Q,
l9500.
TQ-209AC)
DD0012S
DD313
PS 4206
75-IT
2N2Q
2U06
2K2029
TRANSISTOR D1651
2N2027
2N2029
d0313
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PDF
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2N5807
Abstract: 2N5806 thyristor TAG 20 600 2N5809 2N5808 KS 300 A TRIODE thyristors 2N58 thyristor tag 83 thyristor circuit 1970 lm 4221 ii
Text: M IL-S-19500/U6 20 Augngt 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRIODE THYRISTOR BI-DIRECTIONAL ,SILICON, TYPES 2N58CS THROUGH 2N5S'09 This specification Is mandatory for use by all D epart ments and Agencies of the Department of Defense. I.
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MIL-S-19500/
MIL-S-19500
2N5807
2N5806
thyristor TAG 20 600
2N5809
2N5808
KS 300 A TRIODE thyristors
2N58
thyristor tag 83
thyristor circuit 1970
lm 4221 ii
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PDF
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8d26
Abstract: No abstract text available
Text: bq4832Y o U N IT R O D E RTC Module with 32Kx8 NVSRAM Features General Description ► Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a non volatile 262,144-bit SRAM organ ized as 32,768 words by 8 bits with
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bq4832Y
32Kx8
144-bit
32-pin
8d26
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