Untitled
Abstract: No abstract text available
Text: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT54GA60B
APT54GA60S
APT54GA60S
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IC 4027
Abstract: 35gp120b2d2 35GP120 APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
IC 4027
35gp120b2d2
35GP120
APT35GP120B
T0-247
70A 1200V IGBTS
35GP120B
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APT35GP120J
Abstract: 35GP120
Text: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120J
APT35GP120J
35GP120
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Untitled
Abstract: No abstract text available
Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching
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FGA25S125P
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Untitled
Abstract: No abstract text available
Text: FGA25S125P Shorted AnodeTM IGBT Features General Description • High soeed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This
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FGA25S125P
FGA25S125P
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FGA25S125P
Abstract: No abstract text available
Text: FGA25S125P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This
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FGA25S125P
FGA25S125P
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FGA25S125P
Abstract: No abstract text available
Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild ’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with
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FGA25S125P
FGA25S125P
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FOD8384
Abstract: No abstract text available
Text: FOD8384 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin Features Description • Reliable and High-Voltage Insulation with Greater The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/
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FOD8384
FOD8384
com/dwg/M0/M05B
dwg/PKG-M05AB
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APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
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APT35GP120B2D2
Abstract: 35GP120B2D2 35GP120B
Text: APT35GP120B2D2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2D2
APT35GP120B2D2
35GP120B2D2
35GP120B
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A 3120 optocoupler
Abstract: HCPL3120
Text: HCPL-3120/J312, HCNW3120 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The HCPL-3120 contains a GaAsP LED while the HCPLJ312 and the HCNW3120 contain an AlGaAs LED. The LED
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HCPL-3120/J312,
HCNW3120
HCPL-3120
HCNW3120
AV01-0622EN
AV02-0161EN
A 3120 optocoupler
HCPL3120
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darlington bd647
Abstract: TL 2262 lg bd645 tic 2260 BD649
Text: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt
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BD643,
BD645,
BD647,
BD649
O-22QAB
BD649
220AB
darlington bd647
TL 2262
lg bd645
tic 2260
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BD649
Abstract: BD647 TL 2262 BD64S 00m0
Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers
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BD643,
BD645,
BD647,
BD649
TQ-220AB
BD649
BD647
TL 2262
BD64S
00m0
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TL 2262
Abstract: TLXR510 T-5044-E
Text: 1 — — — 1 17E P TELEFUNKEN ELECTRONIC m Ö^GÜRfc. DDDH152 2 TLXR510. Extreme Bright Red LED 0 5 mm T 1% in untinted nondiffused package Color Type Technology Red TLXR 510. GaAIAs on GaAs Angle of half intensity ±<P 12° Applications: General indicating and lighting purposes
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DDDH152
TLXR510.
TL 2262
TLXR510
T-5044-E
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tl 2262 am
Abstract: L55c 6265N integrated circuit TL 2262 l8045
Text: LM6165/LM6265/LM6365 National Semiconductor LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM 6165 fam ily o f high-speed am plifiers exhibits an ex celle n t speed-pow er product in delivering 300 V /fxs and 725 MHz GBW stable for gains as low as + 25 w ith only
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LM6165/LM6265/LM6365
LM6165/LM6265/LM6365
/9152-1I
TL/H/9152-13
tl 2262 am
L55c
6265N
integrated circuit TL 2262
l8045
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FM receiver CIRCUIT DIAGRAM and specification
Abstract: BT 2258 IC 2262 AF FM radio CIRcuit DIAGRAM TL 2262 TL 2272 fm receiver toko varicon toko HU-22124 2262 af tl 2262 am
Text: Philips S em iconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T FEATURES QUICK REFERENCE DATA • Wide supply voltage range: 2.0 to 12V Conditions AM. f, = 1 MHz; m = 0.3; fm= 1 kHz; Vp = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified
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TEA5710;
TEA5710T
TEA5710
FM receiver CIRCUIT DIAGRAM and specification
BT 2258
IC 2262 AF
FM radio CIRcuit DIAGRAM
TL 2262
TL 2272
fm receiver toko
varicon toko HU-22124
2262 af
tl 2262 am
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ Low Power, Low Noise Precision FET Op Amp AD795 FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op Amp and Tl TLC 2201 Low Noise 2.5 JiV p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 0.6 fA /V H z at 1 kHz High DC Accuracy
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AD795
OPA-111,
OPA-121
AD796
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LS123
Abstract: TL 2262 an366 LS221
Text: LS221 mlA 531 National Semiconductor DM74LS221 Dual Non-Retriggerable One-Shot with Clear and Complementary Outputs General Description The DM74LS221 is a dual monostable multivibrator with Schmitt-trigger input. Each device has three inputs permit ting the choice of either leading-edge or trailing-edge trig
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LS221
DM74LS221
LS221
LS123
AN-366.
TL 2262
an366
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Untitled
Abstract: No abstract text available
Text: 2-INPUT VIDEO SUPERIMPOSER NJM2262 NJM 2262 is a 2input video superimposer, inculuding video switch circuit that consist of four Y signal circuit and one C signal circuit. Its impose voltage is set up white level and black level but You can fix its impose voltage.
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NJM2262
300mW
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MIL-C-11015
Abstract: No abstract text available
Text: A - o MIL-C-11015& 39014 M olded Case Construction GENERAL SPECIFICATIONS S tand-off Version A vailable in Radial Leaded CKR Type Voltage Range: 5 0 ,1 0 0 , 200 VDC Hot Solder Dipped Leads in CKR Type C apacitance Range: 10 pF to 3.3 ¡x F Radial and Axial Leaded
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MIL-C-11015&
MIL-C-11015/18
CKR12
CKR14
CKR15
CKR16-
M39014/--
M39014/01-1594
CKR05BX104MS)
orderM39014/011594
MIL-C-11015
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AD796
Abstract: 7915 pin configuration AD795 AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin
Text: ANALOG DEVICES INC 51E » A N A LO G D E V IC E S OaibfiOO 0Q3bl32 b4b • ANA Low Power, Low Noise Precision FET Op Amp AD795 □ FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op A m p and Tl TLC 2201 Low Noise 2.5 JiV p -p m ax, 0.1 Hz to 10 Hz
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003fc
AD795
OPA-111,
OPA-121
AD796
7915 pin configuration
AD795K
AD79S
AD795B
AD795BH
AD795AH
Q81, 1K, 3500 ppm
2265 8pin
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tl 2262 am
Abstract: TL 2272 R DIODE Ch6h TL 2262 2272 t4 tl 2262 am data ADC0646 ADC0844 ADC0848 NSL5027
Text: ADC0844/ADC0848 NATL SEMICOND LINEAR 5ÖE D • bSDllSM G 0 7 3 cìScì 3D7 « N S C S S3 National i-si-io-ce mm Semiconductor ADC0844/ADC0848 8-Bit juP Compatible A/D Converters with Multiplexer Options General Description Features The ADC0844 and ADC0848 are CMOS 8-bit successive
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b5Q1154
ADC0844/ADC0848
ADC0844
ADC0848
D073R75
ADC0844BCN
ADC0844CCN
ADC0848BCN
ADC0848CCN
ADC0844BCJ
tl 2262 am
TL 2272 R
DIODE Ch6h
TL 2262
2272 t4
tl 2262 am data
ADC0646
NSL5027
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Untitled
Abstract: No abstract text available
Text: MOSEL-VITELIC bSE D MOSEL- VITELIC • ^ 3 5 3 3 ^ 1 Q Q 0 5 Q 74 lit. ■ M O V I V53C8512JV53C9512 HIGH PERFORMANCE, LOW POWER 512K x 8 AND 512K x9B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, Irac 50 ns 60 ns
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V53C8512JV53C9512
50/50L
60/60L
70/70L
110ns
8512/V53C9512
8512L/V53C
9512L
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PLD Programming Information
Abstract: No abstract text available
Text: TIBPAL22V10-7C HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS014D- D3520, AUGUST 1990 - REVISED NOVEMBER 1995 NT PA C K AG E T O P V IE W • Second-Generation PLD Architecture • High-Performance Operation: fmax (External Feedback). . . 80 MHz
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TIBPAL22V10-7C
SRPS014D-
D3520,
Programming25
10-BIT
PLD Programming Information
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