Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TL 187 TRANSISTOR Search Results

    TL 187 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TL 187 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor tl 187

    Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
    Text: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght


    Original
    PDF MIL-R-39016/12 transistor tl 187 TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL

    NTE192

    Abstract: NTE192A PNP transistor 263 NTE193A NTE193
    Text: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These


    Original
    PDF NTE192 NTE193 NTE192A NTE193A /NTE193 /NTE193A O92HS 1000cps NTE192 NTE192A PNP transistor 263 NTE193A NTE193

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original
    PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    Untitled

    Abstract: No abstract text available
    Text: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    Original
    PDF 10aucti, MTP4N80E

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original
    PDF IXBL60N360 IC110 100ms 60N360 H9-B11-27)

    HA17358 equivalent

    Abstract: M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769
    Text: Hitachi Standard Linear ICs DATA BOOK ADE-404-002A 2nd Edition 09/98 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of


    Original
    PDF ADE-404-002A HA17901FP-EL HA17358 equivalent M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769

    G-184

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting


    OCR Scan
    PDF 150ns, 10-PIN 14-PIN DG186/187/188 DG189/190/191 G-184

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan
    PDF Q62702-F1144 OT-143 900MHz marking 93A

    2SA661

    Abstract: RH-16 Produced by Perfect Crystal Device Technology
    Text: 2 s a 661 S /U D ^ P N P Il^ ^ /W & h ^ S t t W C T E S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR PCT PROCESS) O Unit in O D river ° High Stag© and V oltage A m plifier A m plifier A pplications A pplications -50 V CEO e>a t 5 0Q7 fff%. => IX 9 S W •' P c = 6 0 0 m W ( T a = 8 5 ' C )


    OCR Scan
    PDF 2sa661 600mW SSC1166 3SC1166 IJI1HH-16 RH-16 RH-16 2SA661 Produced by Perfect Crystal Device Technology

    FES100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre n c h ’ technology. The device features very


    OCR Scan
    PDF BUK9506-30 -T0220A FES100

    Untitled

    Abstract: No abstract text available
    Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear


    OCR Scan
    PDF BFY50-B BFY52 BFY50, BFY51 BFY52 BFY50 BFY51

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K7508-55 T r e n c h M O S transistor S t a n d a r d level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using


    OCR Scan
    PDF K7508-55

    Untitled

    Abstract: No abstract text available
    Text: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET


    OCR Scan
    PDF DG180-191 DG180 DG191 DG186/187/188 DG189/190/191

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using


    OCR Scan
    PDF BUK7608-55

    transistor tl 187

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace


    OCR Scan
    PDF BUK9608-55 transistor tl 187

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using


    OCR Scan
    PDF BUK7608-55

    Untitled

    Abstract: No abstract text available
    Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope suitable tor surtace


    OCR Scan
    PDF BUK9608-55 55elieved

    irf 3110

    Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
    Text: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,


    OCR Scan
    PDF IRF350 IRF351 IRF352 IRF350, irf 3110 IRF3503 IRf 334 IRf 92 0151 irf352 C055

    TL 187 TRANSISTOR PNP

    Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe
    Text: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o


    OCR Scan
    PDF BA6722 BA6722 TL 187 TRANSISTOR PNP BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe

    TL 188 TRANSISTOR PIN DIAGRAM

    Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
    Text: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a


    OCR Scan
    PDF SA5214 SA5214 SA5210, SA5211 SA5212 TL 188 TRANSISTOR PIN DIAGRAM PEAK DETECTOR System on a chip TRANSISTOR CODE SA5

    c 3198 transistor

    Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
    Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed


    OCR Scan
    PDF ----2N6384 2N6385 c 3198 transistor 2N6383 IC 6648 2N6648 sc 3198 transistor

    10N15L

    Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
    Text: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h


    OCR Scan
    PDF 21A-04 O-220AB 10N15L 10N12L mtp10n12 MTM10N15L p10n15l

    LM337H

    Abstract: LM337HVKSTEEL LM337HVK-STEEL LM337HV
    Text: LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators High Voltage General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega­ tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .


    OCR Scan
    PDF /LM337H LM137HV/LM337HV LM137HV LM137HV/LMum TL/H/9066-12 LM337H LM337HVKSTEEL LM337HVK-STEEL LM337HV

    LM337H

    Abstract: LM337HVKSTEEL LM337HVK-STEEL 7b347 VOLTAGE REGULATOR IC LM SERIES LM117
    Text: SflE ]> NATL SEMICOND LINEAR LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators (High Voltage) General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega­ tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .


    OCR Scan
    PDF LM137HV/LM337HV TL/H/9066-12 LM337H LM337HVKSTEEL LM337HVK-STEEL 7b347 VOLTAGE REGULATOR IC LM SERIES LM117