transistor tl 187
Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
Text: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght
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MIL-R-39016/12
transistor tl 187
TL 187
360-2002
TL 187 TRANSISTOR
TRANSISTOR 187
TRANSISTOR 187 datasheet
Series TL
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NTE192
Abstract: NTE192A PNP transistor 263 NTE193A NTE193
Text: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
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NTE192
NTE193
NTE192A
NTE193A
/NTE193
/NTE193A
O92HS
1000cps
NTE192
NTE192A
PNP transistor 263
NTE193A
NTE193
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2N6284 inverter schematic diagram
Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital
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SG388/D
2N6284 inverter schematic diagram
NTD18N06
MKP9V160
sine wave inverter tl494 circuit diagram
ECL IC NAND
adp3121
DARLINGTON TRANSISTOR ARRAY
ezairo
MC74HC4538
TIP142 6403 F
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Untitled
Abstract: No abstract text available
Text: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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10aucti,
MTP4N80E
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBL60N360
IC110
100ms
60N360
H9-B11-27)
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HA17358 equivalent
Abstract: M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769
Text: Hitachi Standard Linear ICs DATA BOOK ADE-404-002A 2nd Edition 09/98 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
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ADE-404-002A
HA17901FP-EL
HA17358 equivalent
M51977
IC ha17555
SG3524 application notes speed control
Automatic Voltage Regulator Circuit
transistor audio fp 1016
ha17555 ic
SG3524 application notes in push pull
HA17555FP
MB3769
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G-184
Abstract: No abstract text available
Text: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting
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150ns,
10-PIN
14-PIN
DG186/187/188
DG189/190/191
G-184
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marking 93A
Abstract: No abstract text available
Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type
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Q62702-F1144
OT-143
900MHz
marking 93A
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2SA661
Abstract: RH-16 Produced by Perfect Crystal Device Technology
Text: 2 s a 661 S /U D ^ P N P Il^ ^ /W & h ^ S t t W C T E S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR PCT PROCESS) O Unit in O D river ° High Stag© and V oltage A m plifier A m plifier A pplications A pplications -50 V CEO e>a t 5 0Q7 fff%. => IX 9 S W •' P c = 6 0 0 m W ( T a = 8 5 ' C )
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2sa661
600mW
SSC1166
3SC1166
IJI1HH-16
RH-16
RH-16
2SA661
Produced by Perfect Crystal Device Technology
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FES100
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre n c h ’ technology. The device features very
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BUK9506-30
-T0220A
FES100
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Untitled
Abstract: No abstract text available
Text: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear
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BFY50-B
BFY52
BFY50,
BFY51
BFY52
BFY50
BFY51
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K7508-55 T r e n c h M O S transistor S t a n d a r d level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using
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K7508-55
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Untitled
Abstract: No abstract text available
Text: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET
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DG180-191
DG180
DG191
DG186/187/188
DG189/190/191
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using
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BUK7608-55
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transistor tl 187
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace
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BUK9608-55
transistor tl 187
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using
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BUK7608-55
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope suitable tor surtace
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BUK9608-55
55elieved
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irf 3110
Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
Text: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,
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IRF350
IRF351
IRF352
IRF350,
irf 3110
IRF3503
IRf 334
IRf 92 0151
irf352
C055
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TL 187 TRANSISTOR PNP
Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe
Text: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o
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BA6722
BA6722
TL 187 TRANSISTOR PNP
BA672
TL 188 TRANSISTOR PNP
TL 188 TRANSISTOR PIN DIAGRAM
aafe
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TL 188 TRANSISTOR PIN DIAGRAM
Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
Text: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a
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SA5214
SA5214
SA5210,
SA5211
SA5212
TL 188 TRANSISTOR PIN DIAGRAM
PEAK DETECTOR
System on a chip
TRANSISTOR CODE SA5
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c 3198 transistor
Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed
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----2N6384
2N6385
c 3198 transistor
2N6383
IC 6648
2N6648
sc 3198 transistor
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10N15L
Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
Text: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h
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21A-04
O-220AB
10N15L
10N12L
mtp10n12
MTM10N15L
p10n15l
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LM337H
Abstract: LM337HVKSTEEL LM337HVK-STEEL LM337HV
Text: LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators High Voltage General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .
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/LM337H
LM137HV/LM337HV
LM137HV
LM137HV/LMum
TL/H/9066-12
LM337H
LM337HVKSTEEL
LM337HVK-STEEL
LM337HV
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LM337H
Abstract: LM337HVKSTEEL LM337HVK-STEEL 7b347 VOLTAGE REGULATOR IC LM SERIES LM117
Text: SflE ]> NATL SEMICOND LINEAR LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators (High Voltage) General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .
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LM137HV/LM337HV
TL/H/9066-12
LM337H
LM337HVKSTEEL
LM337HVK-STEEL
7b347
VOLTAGE REGULATOR IC LM SERIES
LM117
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