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    TK9A90E Search Results

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    TK9A90E Price and Stock

    Toshiba America Electronic Components TK9A90E,S4X

    MOSFET N-CH 900V 9A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK9A90E,S4X Tube 55 1
    • 1 $2.85
    • 10 $2.85
    • 100 $2.85
    • 1000 $0.95074
    • 10000 $0.89375
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    Mouser Electronics TK9A90E,S4X 213
    • 1 $2.61
    • 10 $1.83
    • 100 $1.32
    • 1000 $0.893
    • 10000 $0.893
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    Toshiba America Electronic Components TK9A90E

    Trans MOSFET N-CH 900V 9A 3-Pin TO-220SIS - Rail/Tube (Alt: TK9A90E,S4X)
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    Avnet Americas TK9A90E Tube 16 Weeks 50
    • 1 -
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    • 100 $1.06535
    • 1000 $0.93665
    • 10000 $0.9152
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    Toshiba America Electronic Components TK9A90E,S4X(S

    Mosfet, N-Ch, 900V, 9A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK9A90E, S4X(S
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    Newark TK9A90E,S4X(S Bulk 695 1
    • 1 $2.38
    • 10 $2.06
    • 100 $1.69
    • 1000 $1.43
    • 10000 $1.16
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    EBV Elektronik TK9A90E,S4X(S 19 Weeks 50
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    TK9A90E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK9A90E,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO220SIS Original PDF

    TK9A90E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9A90E O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9A90E O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK9A90E MOSFETs Silicon N-Channel MOS π-MOS TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)


    Original     		PDF TK9A90E O-220SIS

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		PDF SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W