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    TK31J60W5 Search Results

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    TK31J60W5 Price and Stock

    Toshiba America Electronic Components TK31J60W5,S1VQ

    MOSFET N-CH 600V 30.8A TO3P
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    DigiKey TK31J60W5,S1VQ Tube 50 1
    • 1 $10.13
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    Mouser Electronics TK31J60W5,S1VQ
    • 1 $9.95
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    Toshiba America Electronic Components TK31J60W5S1VQ

    Trans MOSFET N 600V 30.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK31J60W5,S1VQ)
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    Avnet Americas TK31J60W5S1VQ Tube 20 Weeks 25
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    Toshiba America Electronic Components TK31J60W5S1VQO

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    Bristol Electronics TK31J60W5S1VQO 60
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    Quest Components TK31J60W5S1VQO 48
    • 1 $9.3024
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    Toshiba America Electronic Components TK31J60W5,S1VQ(O

    MOSFET
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    Chip1Stop TK31J60W5,S1VQ(O 185
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    Toshiba America Electronic Components TK31J60W5

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    Win Source Electronics TK31J60W5 13,000
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    TK31J60W5 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TK31J60W5 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK31J60W5 Toshiba Transistors - Mosfets Original PDF
    TK31J60W5,S1VQ Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V 30.8 TO-3P(N) Original PDF

    TK31J60W5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準)


    Original     		PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		PDF TK31J60W5

    Untitled

    Abstract: No abstract text available
    Text: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		PDF TK31J60W5

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120