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    TK18A30D Search Results

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    TK18A30D Price and Stock

    Toshiba America Electronic Components TK18A30D,S5X

    PB-F POWER MOSFET TRANSISTOR TO-
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    DigiKey TK18A30D,S5X Tube 78 1
    • 1 $2
    • 10 $2
    • 100 $2
    • 1000 $0.73703
    • 10000 $0.72375
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    Mouser Electronics TK18A30D,S5X 179
    • 1 $1.93
    • 10 $1.48
    • 100 $1.11
    • 1000 $0.744
    • 10000 $0.723
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    Toshiba America Electronic Components TK18A30D

    MOSFET N-Channel Enhancement Mode 300V 3-Pin TO-220SIS - Rail/Tube (Alt: TK18A30D,S5X)
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    Avnet Americas TK18A30D Tube 32 Weeks 50
    • 1 -
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    • 100 $0.86271
    • 1000 $0.75849
    • 10000 $0.74112
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    Toshiba America Electronic Components TK18A30D,S5X(M

    Transistor: N-MOSFET; unipolar; 300V; 18A; 45W; SC67
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    TME TK18A30D,S5X(M 1
    • 1 $1.71
    • 10 $1.37
    • 100 $1.22
    • 1000 $1.22
    • 10000 $1.22
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    EBV Elektronik TK18A30D,S5X(M 19 Weeks 50
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    TK18A30D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK18A30D Toshiba Transistors - Mosfets Original PDF
    TK18A30D Toshiba Japanese - Transistors - Mosfets Original PDF

    TK18A30D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK18A30D O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK18A30D MOSFET シリコンNチャネルMOS形 π-MOS TK18A30D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.1 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 300 V)


    Original     		PDF TK18A30D O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK18A30D O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK18A30D MOSFETs Silicon N-Channel MOS π-MOS TK18A30D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.1 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK18A30D O-220SIS

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF