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    TK16G60W5 Price and Stock

    Toshiba America Electronic Components TK16G60W5,RVQ

    PB-F POWER MOSFET TRANSISTOR DPA
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    DigiKey TK16G60W5,RVQ Cut Tape 298 1
    • 1 $3.4
    • 10 $2.346
    • 100 $3.4
    • 1000 $1.4425
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    TK16G60W5,RVQ Digi-Reel 298 1
    • 1 $3.4
    • 10 $2.346
    • 100 $3.4
    • 1000 $1.4425
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    TK16G60W5,RVQ Reel 1,000
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    Mouser Electronics TK16G60W5,RVQ
    • 1 $3.3
    • 10 $2.35
    • 100 $1.72
    • 1000 $1.44
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    Toshiba America Electronic Components TK16G60W5

    MOSFET N-Channel Enhancement Mode 600V 3-Pin D2PAK - Tape and Reel (Alt: TK16G60W5,RVQ)
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    Avnet Americas TK16G60W5 Reel 20 Weeks 1,000
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    Toshiba America Electronic Components TK16G60W5,RVQ(S

    Mosfet, N-Ch, 600V, 15.8A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK16G60W5,RVQ(S
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    Newark TK16G60W5,RVQ(S Cut Tape 2,145 1
    • 1 $1.82
    • 10 $1.82
    • 100 $1.67
    • 1000 $1.54
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    EBV Elektronik TK16G60W5,RVQ(S 23 Weeks 1,000
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    TK16G60W5 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK16G60W5 Toshiba Transistors - Mosfets Original PDF
    TK16G60W5 Toshiba Japanese - Transistors - Mosfets Original PDF

    TK16G60W5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		PDF TK16G60W5

    Untitled

    Abstract: No abstract text available
    Text: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		PDF TK16G60W5

    Untitled

    Abstract: No abstract text available
    Text: TK16G60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK16G60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い: trr = 100 ns (標準) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.18 Ω (標準)


    Original     		PDF TK16G60W5