Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TK12E60U Search Results

    TK12E60U Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK12E60U Toshiba TK12E60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK12E60U,S1X(S Toshiba TK12E60U - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Original PDF
    TK12E60U,S1X(S Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220AB Original PDF

    TK12E60U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK12E60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12E60U Switching Regulator Applications Unit: mm 10± 0.3 2.74 13.9± 0.5 25°C) Rating Drain-source voltage VDSS 600 V Gate-source voltage VGSS r30 V (Note 1) ID 12 Pulse (t 1 ms)


    Original     		PDF TK12E60U 10trolled

    TK12E60U

    Abstract: No abstract text available
    Text: TK12E60U MOSFETs Silicon N-Channel MOS DTMOS TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.0 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF TK12E60U O-220 TK12E60U

    Untitled

    Abstract: No abstract text available
    Text: TK12E60U MOSFETs Silicon N-Channel MOS DTMOS TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF TK12E60U O-220

    Untitled

    Abstract: No abstract text available
    Text: TK12E60U MOSFETs Silicon N-Channel MOS DTMOS TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.0 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)


    Original     		PDF TK12E60U O-220

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    tk20e60u

    Abstract: TPCA*8030 5252 F solar TK13A65D 4614 inverter driver tcv7104 TB6830WBG 4614 mosfet TC7750FTG 5252 solar cell chip
    Text: 2010-5 SYSTEM CATALOG Semiconductors for Power Supplies h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g –2 Power Supply Circuit Types and Their Applications Power supply circuitry includes two blocks: an AC-DC block that converts an alternating current to a direct current, and a DC-DC


    Original     		PDF SCE0024C tk20e60u TPCA*8030 5252 F solar TK13A65D 4614 inverter driver tcv7104 TB6830WBG 4614 mosfet TC7750FTG 5252 solar cell chip