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    TK12A60 Search Results

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    TK12A60 Price and Stock

    Toshiba America Electronic Components TK12A60D(STA4,Q,M)

    MOSFET N-CH 600V 12A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A60D(STA4,Q,M) Tube 88 1
    • 1 $3.59
    • 10 $3.59
    • 100 $3.59
    • 1000 $1.24645
    • 10000 $1.22
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    Mouser Electronics TK12A60D(STA4,Q,M) 119
    • 1 $3.26
    • 10 $3.2
    • 100 $1.68
    • 1000 $1.22
    • 10000 $1.22
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    Newark TK12A60D(STA4,Q,M) Bulk 2,409 1
    • 1 $0.917
    • 10 $0.917
    • 100 $0.917
    • 1000 $0.917
    • 10000 $0.84
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    EBV Elektronik TK12A60D(STA4,Q,M) 19 Weeks 50
    • 1 -
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    Toshiba America Electronic Components TK12A60W,S4VX

    MOSFET N-CH 600V 11.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A60W,S4VX Tube 79 1
    • 1 $4.76
    • 10 $4.76
    • 100 $4.76
    • 1000 $1.7875
    • 10000 $1.7875
    		Buy Now
    Mouser Electronics TK12A60W,S4VX 111
    • 1 $4.45
    • 10 $3.63
    • 100 $2.31
    • 1000 $1.78
    • 10000 $1.78
    		Buy Now
    Bristol Electronics TK12A60W,S4VX 450 1
    • 1 $6.3336
    • 10 $4.1168
    • 100 $2.7443
    • 1000 $2.5968
    • 10000 $2.5968
    		Buy Now
    Quest Components TK12A60W,S4VX 360
    • 1 $8.4825
    • 10 $8.4825
    • 100 $3.9585
    • 1000 $3.6758
    • 10000 $3.6758
    		Buy Now

    Toshiba America Electronic Components TK12A60U(Q,M)

    MOSFET N-CH 600V 12A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A60U(Q,M) Tube
    • 1 -
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    • 100 -
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    		Buy Now

    Toshiba America Electronic Components TK12A60D(STA4QM)

    Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS - Bulk (Alt: 72AK4438)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK12A60D(STA4QM) Bulk 16 Weeks, 3 Days 1
    • 1 $3.03
    • 10 $2.52
    • 100 $1.99
    • 1000 $1.44
    • 10000 $1.44
    		Buy Now
    TK12A60D(STA4QM) Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.45424
    • 1000 $1.3176
    • 10000 $1.3176
    		Buy Now

    Toshiba America Electronic Components TK12A60WS4VX

    Trans MOSFET N 600V 11.5A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK12A60W,S4VX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK12A60WS4VX Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $2.1307
    • 1000 $1.9305
    • 10000 $1.9305
    		Buy Now
    Find more TK12A60 price and stock on Findchips.com

    TK12A60 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK12A60D Toshiba Transistors - Mosfets Original PDF
    TK12A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK12A60D(Q) Toshiba TK12A60D - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK12A60D(STA4,Q,M) Toshiba TK12A60D - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK12A60U Toshiba Japanese - Transistors - Mosfets Original PDF
    TK12A60U Toshiba Transistors - Mosfets Original PDF
    TK12A60U(Q,M) Toshiba TK12A60U - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK12A60U(STA4,Q,M) Toshiba TK12A60U - X35 PB-F POWER MOSFET TRANSISTOR TO-220SIS MOQ=50 V=600 PD=3 Original PDF
    TK12A60W Toshiba TK12A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK12A60W Toshiba Transistors - Mosfets Original PDF
    TK12A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK12A60W,S4VX Toshiba TK12A60 - Power MOSFET - Nch 500V VDSS 700V Original PDF

    TK12A60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A60U

    Abstract: K12A k12a60
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U K12A k12a60 PDF

    K12A60D

    Abstract: TK12A60D
    Text: TK12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D PDF

    K12A60U

    Abstract: k12a60 TK12A60U VDS208
    Text: TK12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 TK12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208 PDF

    k12a60

    Abstract: k12a60d
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Text: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF

    K12A60D

    Abstract: TK12A60D k12a60
    Text: TK12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)


    Original     		TK12A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 TK12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60W MOSFET シリコンNチャネルMOS形 DTMOS TK12A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.265 Ω (標準) (2)


    Original     		TK12A60W O-220SIS PDF

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U transistor K12A PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK12A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK12A60W O-220SIS PDF

    k12a60

    Abstract: TK12A60U K12A60U
    Text: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 TK12A60U K12A60U PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    TB6819

    Abstract: to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16
    Text: 09tf-B-4 AC-DCコンバータ用CCM方式PFC制御IC TB6818FG G Continuous-Conduction Mode type Power Factor Correction PFCトランス音鳴り防止を実現 特 長 ブロック図 ● 動作電圧範囲： 8.4 V（Min）~ 26 V（Max） ● 起動電圧：10.0 V（Typ.）


    Original     		09tf-B-4 TB6818FG TB6819FG TB6820FG SSOP16/DIP16 SSOP16 TK12A60D TK13A60D TK12A60U TB6819 to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF