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Abstract: No abstract text available
Text: SKR 22,4 Qu bond Absolute Maximum Ratings Symbol Conditions Unit VRRM Tj = 25 °C, IR = 2 mA 1600 V IF AV Tc = 80 °C, Tj = 150 °C 630 A 446500 A2s Tj = 25 °C 10500 A Tj = 150 °C 9450 A 150 °C 2 it Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180° Tjmax
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Abstract: No abstract text available
Text: SKR 22,4 Qu bond Absolute Maximum Ratings Symbol Conditions VRRM IF AV 2 Values Unit Tj = 25 °C, IR = 2 mA 1600 V Tc = 80 °C, Tj = 150 °C 630 A 446500 A2s Tj = 25 °C 10500 A Tj = 150 °C 9450 A 150 °C it Tj = 150 °C, 10 ms, sin 180° IFSM 10 ms sin 180°
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Text: SKUT 85/16 T V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Abstract: No abstract text available
Text: SKUT 85/12 V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Abstract: No abstract text available
Text: SKUT 85/16 V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Abstract: No abstract text available
Text: SKUT 85/16 V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Text: SKUT 85/16 T V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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53rrent
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Abstract: No abstract text available
Text: SKUT 85/12 V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Abstract: No abstract text available
Text: SKUT 85/12 T V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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Untitled
Abstract: No abstract text available
Text: SKUT 85/12 T V2 Absolute Maximum Ratings Symbol Conditions Values Unit Ts = 25 °C 94 A Ts = 85 °C 50 A Tj = 25 °C 1150 A Tj = 130 °C 1050 A Tj = 25 °C 6613 A²s Tj = 130 °C 5000 A²s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPONT 5 Three phase antiparallel
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125OC
Abstract: 408A
Text: AEGIS SEMICONDUTORES LTDA. A1F:130.XXHY VOLTAGE RATINGS Part Number VRRM , VR – V rep. peak reverse voltage Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 125 OC TJ = -40 to 0 C TJ = 25 to 125OC A1F:130.02HY 200 200 300 A1F:130.04HY
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125OC
O-209AB
125OC
408A
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Abstract: No abstract text available
Text: SEMiX603GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX603GAL066HDs
SEMiX603GAL066HDs
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Abstract: No abstract text available
Text: SEMiX603GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX603GAR066HDs
SEMiX603GAR066HDs
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A5F 12
Abstract: 125OC
Text: AEGIS SEMICONDUTORES LTDA. A5F:1000.XXHY VOLTAGE RATINGS VRRM , VR V rep. peak reverse voltage Part Number Max. VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 0 to 125OC TJ = -40 to 0 C TJ = 25 to 125OC A5F:1000.02HY 200 200 300 A5F:1000.04HY 400 400
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125OC
A5F 12
125OC
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125OC
Abstract: A5F 12
Text: AEGIS SEMICONDUTORES LTDA. A5F:240.XXHY VOLTAGE RATINGS VRRM , VR – V rep. peak reverse voltage Part Number Max. VRSM , VR – (V) Max. nonrep. peak reverse voltage TJ = 0 to 125 OC TJ = -40 to 0 C TJ = 25 to 125 OC A5F:240.02HY 200 200 300 A5F:240.04HY
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O-200AA
125OC
A5F 12
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a5n 600 14h
Abstract: 125OC 60002H
Text: AEGIS SEMICONDUTORES LTDA. A5N:670.XXH VOLTAGE RATINGS Part Number VRRM , VR V Max. rep. peak reverse voltage O VRSM , VR (V) Max. nonrep. peak reverse voltage O O TJ = 0 to 125 C TJ = -40 to 0 C TJ = 25 to 125 C A5N:600.02H 200 200 300 A5N:600.04H 400 400
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300ms
O-200AC
a5n 600 14h
125OC
60002H
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarVHVTM HiPerFET Power MOSFET IXFB40N110P VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS PLUS264TM (IXFB)
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IXFB40N110P
300ns
PLUS264TM
338B2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000
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IXFL44N100P
300ns
44N100P
9-20-07-C
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ixgh24n120c3h1
Abstract: IC100
Text: Preliminary Technical Information IXGH24N120C3H1 GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES
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IXGH24N120C3H1
10-50kHz
IC100
110ns
24N120C3H1
01-15-08-C
ixgh24n120c3h1
IC100
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGH24N120C3H1 High speed PT IGBTs for 10-50kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES
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IXGH24N120C3H1
10-50kHz
IC100
110ns
O-247AD
24N120C3H1
01-15-08-C
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IXFH4N100Q
Abstract: IXFR4N100Q
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM
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ISOPLUS247TM
4N100Q
200ns
IXFH4N100Q
728B1
123B1
728B1
065B1
IXFR4N100Q
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200N30PB
Abstract: IXGH100N30B3 200n3 200n30
Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGH100N30B3
200N30PB
7-05-08-D
IXGH100N30B3
200n3
200n30
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200N30PB
Abstract: 200n30
Text: Preliminary Technical Information GenX3TM 300V IGBT VCES = IC110 = VCE sat ≤ tfi(typ) = IXGH100N30B3 Medium speed low Vsat PT IGBTs for 10-50 kHz switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXGH100N30B3
100Turn-off
200N30PB
7-05-08-D
200n30
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IXFR4N100Q
Abstract: IXFH4N100 ll1000
Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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ISOPLUS247TM
4N100Q
200ns
IXFH4N100
IXFR4N100Q
ll1000
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