TIP147F
Abstract: TIP146F TIP145F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP146F
TIP145F
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TIP145F
Abstract: TIP146F TIP147F TIP140 TIP141 TIP142 tip142 equivalent
Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
TIP147F
TIP140
TIP141
TIP142
tip142 equivalent
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TIP147F
Abstract: TIP146F TIP145F
Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP146F
TIP145F
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145-F
Abstract: TIP145F 141F 147F TIP140F TIP141F TIP142F TIP146F TIP147F
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications
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ISO/TS16949
TIP140F,
TIP145F,
TIP140F
TIP145F
TIP141F
TIP146F
TIP142F
TIP147F
C-120
145-F
TIP145F
141F
147F
TIP140F
TIP141F
TIP142F
TIP146F
TIP147F
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS
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TIP140F/141F/142F
TIP145F/146F/147F
TIP140T
TIP141T
TIP142T
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TIP142F
Abstract: NPN Transistor VCEO 80V 100V TIP140 TIP140F TIP141 TIP141F TIP142
Text: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor
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TIP140F/141F/142F
TIP145F/146F/147F
TIP140F
TIP141F
TIP142F
TIP142F
NPN Transistor VCEO 80V 100V
TIP140
TIP140F
TIP141
TIP141F
TIP142
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Transistor Cross Reference
Abstract: No abstract text available
Text: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor
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TIP140F/141F/142F
TIP145F/146F/147F
TIP140F
TIP141F
TIP142F
TIP140F
Transistor Cross Reference
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TIP145F
Abstract: 141F 147F TIP140F TIP141F TIP142F TIP146F TIP147F
Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications
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TIP140F,
TIP145F,
TIP140F
TIP145F
TIP141F
TIP146F
C-120
TIP140F
050503E
TIP145F
141F
147F
TIP141F
TIP142F
TIP146F
TIP147F
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Untitled
Abstract: No abstract text available
Text: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor
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TIP140F/141F/142F
TIP145F/146F/147F
TIP140F
TIP141F
TIP142F
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TIP147F
Abstract: TIP146F TIP145F
Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
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TIP145F
Abstract: TIP146F TIP147F 147F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS
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Original
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
TIP147F
147F
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Untitled
Abstract: No abstract text available
Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
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141F
Abstract: TIP147F tip npn TIP145F TIP146F 147F TIP142F 145-F
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS TIP 140F, TIP 141F, TIP142F TIP145F, TIP146F, TIP147F TO- 3P Plastic Package B C E Power Darlingtons for Linear and Switching Applications
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TIP142F
TIP145F,
TIP146F,
TIP147F
C-120
TIP140F
147FRev150901
141F
TIP147F
tip npn
TIP145F
TIP146F
147F
TIP142F
145-F
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TIP145F
Abstract: TIP146F TIP147F
Text: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor
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Original
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TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP145F
TIP146F
TIP147F
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147F
Abstract: 141F TIP145F TIP146F TIP140F TIP141F TIP142F TIP147F
Text: Transys Electronics L I M I T E D SILICON PLANAR DARLINGTON POWER TRANSISTORS TIP140F, 141F, 142F NPN TIP145F, 146F, 147F PNP TO- 3P Fully Isolated Plastic Package B C E For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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TIP140F,
TIP145F,
TIP140F
TIP145F
TIP141F
TIP146F
TIP142F
TIP147F
147F
141F
TIP145F
TIP146F
TIP140F
TIP141F
TIP142F
TIP147F
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fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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tip 147 TRANSISTOR
Abstract: TIP147F TIP146F TIP145F
Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic
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PDF
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TIP145F/146F/147F
/141F
/142F
45F/146F/147
tip 147 TRANSISTOR
TIP147F
TIP146F
TIP145F
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN h FE = 1000 @ V c e = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Com plement to TIP140F/141 F/142F ABSOLUTE MAXIMUM RATINGS
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PDF
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TIP145F/146F/147F
TIP140F/141
F/142F
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TIP1477
Abstract: TLP147 k 3531 transistor TIP145F TIP146F TIP147F transistor K 3531 TIP147T pnp darlington to-220 10a
Text: SAMSU NG SEM ICONDUCTOR INC 14E D B.Tab'llME GG077SG 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAltf' MIN hFE=1000 @ V c e = — 4 V , lc = -5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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7UH112
aG077SG
TIP145F/146F/147F
TIP140F/141F/142F
TIP145F
TIP146F
TIP147F
TIP1477
TLP147
k 3531 transistor
TIP145F
TIP146F
TIP147F
transistor K 3531
TIP147T
pnp darlington to-220 10a
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BU426AF
Abstract: T03P BU908F 2SA1301F 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426F BU508AF
Text: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD
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2SA1301F
2SA13O2F0
2SB817F
2SC3280F
TIP146F
TIP147F
TIP2955F
TIP2955HVF
TIP3055F
TIP3055HVF
BU426AF
T03P
BU908F
2SD1047F
2SD1426F
BU426F
BU508AF
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2sb817f
Abstract: 2SA1301F 2SA1302F 2SC3280F 2SC3281F 2SD1047F 2SD1426F 2SD1554F BU426AF BU426F
Text: TO-3P Fully Isolated Plastic Package Transistors MIN. DIM A 17.75 B 5.2 3.8 C D 0 1.9 14.50 E F 33.25 C 20.75 H 11.50 K 1.0 L 18.75 M 0.40 N 3.15 P 5.21 il MAX. 18.25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1,30 21.65 0.60 3.45 5.72 PIN 1. 2. 3. CONFIGURATION
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TIP145F
TIP146F
TIP147F
TIP2955F
TIP2955HVF
TIP3055F
TIP3055HVF
2sb817f
2SA1301F
2SA1302F
2SC3280F
2SC3281F
2SD1047F
2SD1426F
2SD1554F
BU426AF
BU426F
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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TO-3P
Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Text: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)
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T0-220
KSD1413
KSB1023
KSD1589
KSB1098
KSD1417
KSB1022
TIP140F
TIP145F
TO-3P
TIP140
TIP145
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