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    Toshiba America Electronic Components TIM8596-2

    MICROWAVE POWER GaAs FET 15V 2.6A 3-Pin 2-9D1B (Alt: TIM8596-2)
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    EBV Elektronik TIM8596-2 26 Weeks 1
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    Toshiba America Electronic Components TIM8596-8

    MICROWAVE POWER GaAs FET 15V 10.4A 3-Pin 2-11C1B (Alt: TIM8596-8)
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    EBV Elektronik TIM8596-8 26 Weeks 1
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    Toshiba America Electronic Components TIM8596-4

    MICROWAVE POWER GaAs FET 15V 5.2A 3-Pin 2-9D1B (Alt: TIM8596-4)
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    EBV Elektronik TIM8596-4 26 Weeks 1
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    Toshiba America Electronic Components TIM8596-15

    MICROWAVE POWER GaAs FET 15V 11.5A 3-Pin 2-11C1B (Alt: TIM8596-15)
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    EBV Elektronik TIM8596-15 26 Weeks 1
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    TIM85 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM8596-15 Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM8596-15 Toshiba TIM8596 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF
    TIM8596-2 Toshiba Microwave Power GaAs FET Original PDF
    TIM8596-2 Toshiba TIM8596 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM8596-2 Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM8596-4 Toshiba Microwave Power GaAs FET Original PDF
    TIM8596-4 Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM8596-8 Toshiba Microwave Power GaAs FET Original PDF
    TIM8596-8 Toshiba MICROWAVE POWER GaAs FET Scan PDF

    TIM85 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM8596-2

    TIM8596-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM8596-4 MW51180196 TIM8596-4

    TIM8596-4

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8596-4 TIM8596-4

    TIM8596-8

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8596-8 TIM8596-8

    TIM8596-15

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-15 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.0dBm at 8.5GHz to 9.6GHz n HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		PDF TIM8596-15 2-11C1B) TIM8596-15

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM8596-4

    TIM8596-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8596-2 TIM8596-2

    TIM8596-2

    Abstract: toshiba fet
    Text: TOSHIBA TIM8596-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM8596-2 MW51120196 TIM8596-2 toshiba fet

    TIM8596-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM8596-8 2-11C1B) MW51190196 TIM8596-8

    TIM8596-15

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM8596-15 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 8.5GHz to 9.6GHz „ HERMETICALLY SEALED PACKAGE „ HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM8596-15 TIM8596-15

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-4

    C01117

    Abstract: TIM8596-8
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8596-8 TECHNICAL DATA • B H H B B n H B D B B H B B H FEATURES: ■ HIGH POWER PldB = 39-5 dBm at 8,5 GHz to 9.6 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6.0 dB at 8.5 GHz to 9.6 GHz


    OCR Scan     		PDF TIM8596-8 C01117 2-11C1B) -TIM8596-8- TIM8596-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-8 2-11C1B) MW51190196 1EH725D

    TIM8596-2

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8596-2 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz ■ BROAD BAND IN T E R N A LLY MATCHED ■ HIGH GAIN G idB = 7.5 dB at 8.5 GHz to 9.6 GHz ■ H ERM ETICALLY SE A LED PACKAGE


    OCR Scan     		PDF TIM8596-2 -TIM8596-2- TIM8596-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-2 MW51120196 002271b TIM8596-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-4 MW51180196 G0S272G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-8 CharM8596-8 2-11C1B) MW51190196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM8596-2 MW51120196 TIM8596-2

    TIM8596-4

    Abstract: A2325
    Text: TOSHIBA MICROWAVE POWER GaAs F ET MICROWAVE SEMICONDUCTOR TIM8596-4 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 36.5 dBm at 8.5 GHz to 9.6 GHz ■ HIGH GAIN GldB = 7.5 dB at 8.5 GHz to 9.6 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM8596-4 -TIM8596-4- TIM8596-4 A2325