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    TIM5359-16 Price and Stock

    Toshiba America Electronic Components TIM535916SL

    MICROWAVE POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA TIM535916SL 4
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    Toshiba America Electronic Components TIM5359-16UL

    MICROWAVE POWER GaAs FET 15V 14A 3-Pin 2-16G1B (Alt: TIM5359-16UL)
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    EBV Elektronik TIM5359-16UL 26 Weeks 1
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    TIM5359-16 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM5359-16 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM5359-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-16EL Toshiba TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power Original PDF
    TIM5359-16L Toshiba Transistor Scan PDF
    TIM5359-16SL Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power Original PDF
    TIM5359-16UL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B Original PDF