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    Block USA Inc. TIM500

    Isolation Transformer, 500 Va, 1 X 230V, 2 X 115V, 2.1 A Rohs Compliant: Yes |Block TIM500
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    Newark TIM500 Bulk 9 1
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    TIM50 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM5053-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5053-16L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5053-16SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5053-30L Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5053-35SL Toshiba Microwave Power GAAS Fet Scan PDF
    TIM5053-35SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM5053-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5053-4SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 36.5; G1dB (dB): 9.5; Ids (A) Typ.: 1.1; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 4.5; Package Type: 2-16G1B Original PDF
    TIM5053-8 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5053-8L Toshiba Transistor Scan PDF
    TIM5053-8SL Toshiba MICROWAVE POWER GaAs FET Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-8SL

    TIM5053-4SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level „ HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-4SL TIM5053-4SL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		PDF TIM5053-16SL 42uipment TIM5053-16SL 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-4SL P RELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.5dBm at 5.0GHz to 5.3GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		PDF TIM5053-4SL TIM5053-4SL 2-11D1B)

    TIM5053-4SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-4SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level n HIGH POWER P1dB=36.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.5dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-4SL TIM5053-4SL

    TIM5053-30L

    Abstract: No abstract text available
    Text: TOSHIBA TIM5053-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.0 GHz to 5.3 GHz


    Original     		PDF TIM5053-30L 2-16G1B) MW50640196 TIM5053-30L

    TIM5053-8SL

    Abstract: 53GHZ/512K/533FSB
    Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-8SL TIM5053-8SL 53GHZ/512K/533FSB

    TIM5053-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-35SL 35dBm TIM5053-35SL

    TIM5053-8SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level n HIGH POWER P1dB=39.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-8SL TIM5053-8SL

    TIM5053-16SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level n HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-16SL TIM5053-16SL

    TIM5053-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM5053-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G1dB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM5053-8 2-11D1B) MW50610196 TIM5053-8

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-16SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level „ HIGH POWER P1dB=42.5dBm at 5.0GHz to 5.3GHz „ HIGH GAIN G1dB=8.5dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-16SL

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEMICONDUCTOR TIM5053-35SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY IMS » -45dBo at Po » 35.tídBm rjadd a 38« a t S. 0 to 5. 3GHz ■ HIGH POWER ■ HIGH GAIN GldB s 9. OdB at 5.0 to 5.3GHz


    OCR Scan     		PDF TIM5053-35SL -45dBo 5053-35SI TIU5053-35SI

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-4 TECHNICAL DATA FEATURES: • HIGH POWER Pi dB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM5053-4 2-11D1B) TIM5053-4--------------------POWER

    Untitled

    Abstract: No abstract text available
    Text: TIM5053-8L FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 28 dBm, Single Carrier Level ■ HIGH POWER Pi dB = 39 dBm at 5.0 GHz to 5.3 GHz ■ HIGH GAIN GldB = 9 dB at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM5053-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16 Internally Matched Power GaAs FETs C-Band Features • H i g h power - P idB = 42.5 dBm at 5.0 GHz to 5.3 GHz • High gain - G-|dB = 8 dB at 5.0 GHz to 5.3 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM5053-16 2-16G1B) MW50620196 00224m

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P ide = 42.5 dBm at 5.0 GHz to 5.3 GHz


    OCR Scan     		PDF TIM5053-16L MW50630196 M5053-16L 372S0

    TIM5053-35SL

    Abstract: TIM5053-3SSL
    Text: TOSHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEM ICO NDUCTO R TIM5053- 35SL TECHNICAL DATA FEATURES : • LOW INTERM O DULATIO N DISTO RTIO N ■ HIGH EFFIC IEN C Y IMS » -4 5 d B o at Po » 35.ddB m ■qadd a 38« a t S. 0 to 5. 3GHz ■ HIGH G AIN ■ H IG H P O W E R


    OCR Scan     		PDF TIM5053-35SL -46dBo 15SHZ TIM5053-35SL TIM5053-3SSL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER G aAs FET M ICROWAVE S E M IC O N D U C T O R TIM5053-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION TJadd = 38% at 5. 0 to 5. 3GHz IM3 = -4 5 d B c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER


    OCR Scan     		PDF TIM5053-35SL 053-35SL 2-16G1B) TIM5053-35SL-------------POWER

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-16L TECHNICAL DATA FEATURES: HIGH GAIN G1dB = 8.0 dB at 5.0 GHz to 5.3 GHz BROAD BAND INTERNALLY MATCHED • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 31.5 dBm Single Carrier Level


    OCR Scan     		PDF TIM5053-16L 2-16G1B) ---------TIM5053-16L----------------POWER

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5053-8 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 39 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9 0 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM5053-8 2-11D1B)

    OC44

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 5.0 GHz to 5.3 GHz • High gain - G idB = 9.0 dB at 5.0 GHz to 5.3 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM5053-8 2-11D1B) at260 OC44

    TIM5053-4

    Abstract: No abstract text available
    Text: TIM5053-4 FEATURES: • HIGH POWER PldB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G-|dB = 9.5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS O u tp u t Power


    OCR Scan     		PDF TIM5053-4 2-11D1B) 2601C. TCH7250 TIM5053-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.0 G H z to 5 .3 G H z


    OCR Scan     		PDF TIM5053-16L 2-16G1B) MW50630196 TIM5053-161Power