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    TIM12 Price and Stock

    Toshiba America Electronic Components TIM1213-8ULA

    MICROWAVE POWER GaAs FET 15V 5.7A 3-Pin 2-11C1B - Trays (Alt: TIM1213-8ULA)
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    Avnet Americas TIM1213-8ULA Tray 1
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    TIM1213-8ULA Tray 1
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    EBV Elektronik TIM1213-8ULA 26 Weeks 1
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    Knowles Corporation TIM120C

    Trimmer / Variable Capacitors
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    Mouser Electronics TIM120C
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    Toshiba America Electronic Components TIM1213-8L

    KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
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    Quest Components TIM1213-8L 5
    • 1 $553.5
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    TRENDnet TI-M12

    INDUSTRIAL MODBUS GATEWAY
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    NAC TI-M12 1
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    Toshiba America Electronic Components TIM1213-4

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    Velocity Electronics TIM1213-4 1
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    Find more TIM12 price and stock on Findchips.com

    TIM12 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM1213-10 Toshiba Internally Matched Power GaAs FET (X, Ku-Band) Original PDF
    TIM1213-10 Toshiba IC FET MISC 3(2-11C1B) Scan PDF
    TIM1213-10L Toshiba FET, Microwave Power GaAs FET Transistor, ID 11.5 A Scan PDF
    TIM1213-10L Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM1213-15 Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM1213-15 Toshiba IC FET MISC 3(2-11C1B) Scan PDF
    TIM1213-15L Toshiba TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF
    TIM1213-15L Toshiba FET, Microwave FET Transistor, ID 11.5 A Scan PDF
    TIM1213-15L Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM1213-18L Toshiba TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF
    TIM1213-2 Toshiba FET, Microwave Power GaAs FET Transistor, ID 2.6 A Original PDF
    TIM1213-2 Toshiba TIM1213 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power Original PDF
    TIM1213-2L Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM1213-2L Toshiba TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1213-30L Toshiba TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power Original PDF
    TIM1213-4 Toshiba Internally Matched Power GaAs FET (X,Ku-Band) Original PDF
    TIM1213-4 Toshiba TIM1213 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power Original PDF
    TIM1213-4L Toshiba FET, Microwave Power GaAs FET Transistor, ID 5.2 A Original PDF
    TIM1213-4UL Toshiba TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1213-5 Toshiba MICROWAVE POWER GaAs FET Original PDF

    TIM12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM1213

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET


    Original     		PDF TIM1213-10L TIM1213

    TIM1213-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-4 MW50220196 TIM1213-4

    TIM1213-10

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-10 M1213-10 2-11C1B) MW50260196 TIM1213-10

    TIM1213-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-8 2-11C1B) MW50240196 TIM1213-8

    TIM1213-10L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm „ HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz „ HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz „ BROAD BAND INTERNALLY MATCHED FET


    Original     		PDF TIM1213-10L TIM1213-10L

    TIM1213-5

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-5 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=37.0dBm at 12.7GHz to 13.2GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=7.0dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		PDF TIM1213-5 TIM1213-5

    TIM1213-8L

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz


    Original     		PDF TIM1213-8L 2-11C1A) MW50250196 TIM1213-8L

    TIM1213-30L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 12.7GHz to 13.2GHz „ LOW INTERMODULATION DISTORTION


    Original     		PDF TIM1213-30L -28dBc 7-AA03A) TIM1213-30L

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM1213-4L

    TIM1213-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-2 MW50210196 TIM1213-2

    TIM1213-4L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz „ HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1213-4L TIM1213-4L

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM1213-2L

    Untitled

    Abstract: No abstract text available
    Text: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1213-15L 2-11C1B) 213-15L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-4L TECHNICAL DATA FEATURES : • ■ HIGH GAIN LOW INTER M O D U LA TIO N DISTO R TIO N IM 3 = - 4 5 dBc at Po = 25 dBm, G idB = 7.5 dB at 12.7 GHz to 13.2 GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF TIM1213-4L TIM1213-4L

    TIM1213-15

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER GaAs FET MICROW AVE SEM ICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER 9 BROAD BAND INTERNALLY MATCHED PidB = 42. OdBm a t 12.7 to 13. 2GHz Q HIGH GAIN HERMETICALLY SEALED PACKAGE G idB = 6. OdB a t 12.7 to 13. 2GHz


    OCR Scan     		PDF -TIM1213-15- --TIM1213-15- TIM1213-15

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER P ,c ib ■ = 4 2 . O dBm a t HIGH GAIN G ida » 6. QdB a t 12.7 \ to « BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE 1 3 . 2 GHz


    OCR Scan     		PDF TIM1213-15

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1213-2 I213-2

    Untitled

    Abstract: No abstract text available
    Text: - TIM1213-15L FEA TU R ES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ IM 3 = - 4 5 d B c at Po = 30.0 dBm , G-idB = 6.0 dB at 12.7 GHz to 13.2 GHz Single C arrier Level ■ H IG H GAIN H IG H PO W ER ■ B R O A D B A ND IN T E R N A L L Y M A T C H E D


    OCR Scan     		PDF TIM1213-15L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10L Features • H igh po w e r - IM 3 = -45 d B c a t Po = 29 dB m , - S in g le c a rrie r level • H igh po w e r - P 1dB = 4 0 .5 d B m at 12.7 G H z to 13.2 G H z • H igh gain - G 1 b = 6 .0 dB at 12.7 G H z to 13.2 G H z


    OCR Scan     		PDF TIM1213-10L 2-11C1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1213-4 MW50220196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM1213-10L TECHNICAL DATA FEATURES : • HIG H POWER ■ HIGH GAIN IM 3 = - 45 dBc at Po = 29 dBm, G 1dB = 6.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF TIM1213-10L 2-11C1B) ------------TIM1213-10L-------------POWER

    MW5024

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1213-8 MW50240196 MW5024

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1213-4 MW50220196