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    Toshiba America Electronic Components TIM1112-8

    MICROWAVE POWER GaAs FET 15V 10.4A 3-Pin 2-11C1B (Alt: TIM1112-8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik TIM1112-8 26 Weeks 1
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    Toshiba America Electronic Components TIM1112-15L

    MICROWAVE POWER GaAs FET 15V 11.5A 3-Pin 2-11C1B (Alt: TIM1112-15L)
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    EBV Elektronik TIM1112-15L 26 Weeks 1
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    TIM11 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM1112-15L Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM1112-2 Toshiba FET, Microwave Power GaAs FET Transistor, ID 2.6 A Original PDF
    TIM1112-2 Toshiba TIM1112 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1112-2 Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM1112-4 Toshiba FET, Microwave Power GaAs FET Transistor, ID 5.2 A Original PDF
    TIM1112-4 Toshiba TIM1112 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1112-4 Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM1112-4UL Toshiba TIM1112 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1112-8 Toshiba FET, Microwave Power GaAs FET Transistor, ID 10.4 A Original PDF
    TIM1112-8 Toshiba TIM1112 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF

    TIM11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM1112-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-8 2-11C1B) MW50200196 TIM1112-8

    TIM1112-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-4 MW50190196 TIM1112-4

    TIM1112-15L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.0dBm at 11.7GHz to 12.7GHz n HIGH GAIN G1dB=6.0dB at 11.7GHz to 12.7GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM1112-15L TIM1112-15L

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM1112-2

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN G1dB=9.5dB at 11.7GHz to 12.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1112-4UL

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-2 FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 7.5dB at 11.7GHz to 12.7GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL


    Original     		PDF TIM1112-2 No1143

    TIM1112-2

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1112-2 TIM1112-2

    TIM1112-8

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1112-8 TIM1112-8

    TIM1112-4

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1112-4 TIM1112-4

    TIM1112-15L

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=42.0dBm at 11.7GHz to 12.7GHz „ HIGH GAIN G1dB=6.0dB at 11.7GHz to 12.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		PDF TIM1112-15L TIM1112-15L

    TIM1112-2

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-2 MW50180196 TIM1112-2

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1112-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 11.7GHz to 12.7GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		PDF TIM1112-4

    STM32F429N

    Abstract: STM32F429Ni
    Text: STM32F427xx STM32F429xx ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT Datasheet - production data Features &"'! • Core: ARM 32-bit Cortex®-M4 CPU with FPU,


    Original     		PDF STM32F427xx STM32F429xx 225DMIPS, Flash/256 32-bit 64-KB DocID024030 STM32F429N STM32F429Ni

    Untitled

    Abstract: No abstract text available
    Text: STM32F437xx STM32F439xx ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera&LCD-TFT Datasheet - production data Features &"'! • Core: ARM 32-bit Cortex®-M4 CPU with FPU,


    Original     		PDF STM32F437xx STM32F439xx 225DMIPS, Flash/256 32-bit 64-KB DocID024244

    Untitled

    Abstract: No abstract text available
    Text: STM32L15xx6/8/B-A Ultra-low-power 32-bit MCU ARM -based Cortex®-M3, 128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range


    Original     		PDF STM32L15xx6/8/B-A 32-bit 128KB C/105Â DocID024330

    stm32f205

    Abstract: STM32F207 STM32F2xx stm32f20 SMT32F stm32f10x errata PM0059 PM0062 AN2606 stm32 timer RM00033
    Text: AN2606 Application note STM32 microcontroller system memory boot mode Introduction The bootloader is stored in the internal boot ROM memory system memory of STM32 devices. It is programmed by ST during production. Its main task is to download the application program to the internal Flash memory through one of the available serial


    Original     		PDF AN2606 STM32TM STM32 stm32f205 STM32F207 STM32F2xx stm32f20 SMT32F stm32f10x errata PM0059 PM0062 AN2606 stm32 timer RM00033

    arm stm32 f103

    Abstract: stm32f103z STM32F103VG STM32F103VF STM32F103ZG stm32f103xg stm32 f103 100 pin STM32F103Rx LQFP100 LQFP144
    Text: STM32F103xF STM32F103xG XL-density performance line ARM-based 32-bit MCU with 768 KB to 1 MB Flash, USB, CAN, 17 timers, 3 ADCs, 13 communication interfaces Preliminary data Features FBGA • Core: ARM 32-bit Cortex -M3 CPU with MPU – 72 MHz maximum frequency,


    Original     		PDF STM32F103xF STM32F103xG 32-bit arm stm32 f103 stm32f103z STM32F103VG STM32F103VF STM32F103ZG stm32f103xg stm32 f103 100 pin STM32F103Rx LQFP100 LQFP144

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-4 MW50190196

    30yA

    Abstract: TIM1112-2
    Text: TOSHIBA MICROWAVE POWER GaAs FET M/CROtVAVE SEMICONDUCTOR TIM1112-2 TECHNICAL DATA FEATURES: • HIGH POWER PìdB = 33.5 dBm at 11.7 GHz to 12.7 GHz ■ HIGH GAIN GidB = 7.5 dB at 11.7 GHz to 12.7 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1112-2 30yA TIM1112-2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-8 2-11C1B) MW50200196 MW5O2O0196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-2 MW50180196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROW AVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1112-8 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 39.5 dBm at 11.7 GHz to 12.7 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 5.0 dB at 11.7 GHz to 12.7 GHz ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1112-8 2-11C1B) TIM1112-8--------------POWER

    TIM1112-4

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs F ET S E M IC O N D U C T O R TIM1112-4 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 36.5 dBm at 11.7 GHz to 12.7 GHz ■ HIGH GAIN GidB = 7.5 dB at 11.7 GHz to 12.7 GHz BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1112-4 TIM1112-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-8 2-11C1B) MW50200196