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    Dycotec Materials Ltd DM-TIM-15045-SY-30

    NON-SILICONE GEL/PUTTY 4.5 W/MK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DM-TIM-15045-SY-30 Bulk 51 1
    • 1 $55.73
    • 10 $50.1
    • 100 $38.24
    • 1000 $38.24
    • 10000 $38.24
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    Dycotec Materials Ltd DM-TIM-15055-SYP-10

    NON-SILICONE GEL/PUTTY 5.5 W/MK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DM-TIM-15055-SYP-10 Bulk 50 1
    • 1 $53.99
    • 10 $28.48
    • 100 $19.17
    • 1000 $19.17
    • 10000 $19.17
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    Dycotec Materials Ltd DM-TIM-15065-SYP-10

    NON-SILICONE GEL/PUTTY 6.5 W/MK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DM-TIM-15065-SYP-10 Bulk 49 1
    • 1 $46.14
    • 10 $29.43
    • 100 $19.17
    • 1000 $19.17
    • 10000 $19.17
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    Dycotec Materials Ltd DM-TIM-15045-SYP-10

    NON-SILICONE GEL/PUTTY 4.5 W/MK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DM-TIM-15045-SYP-10 Bulk 48 1
    • 1 $45.89
    • 10 $28.43
    • 100 $18.27
    • 1000 $18.27
    • 10000 $18.27
    		Buy Now

    Dycotec Materials Ltd DM-TIM-15025-SY-30

    NON-SILICONE GEL/PUTTY 2.5 W/MK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DM-TIM-15025-SY-30 Bulk 46 1
    • 1 $45.16
    • 10 $35.95
    • 100 $23.34
    • 1000 $23.34
    • 10000 $23.34
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    Find more TIM1 price and stock on Findchips.com

    TIM1 Datasheets (166)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM1011-10 Toshiba Internally Matched Power GaAs FET (X, Ku-Band) Original PDF
    TIM1011-10 Toshiba TIM1011 - TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power Original PDF
    TIM1011-10 Toshiba Microwave Power GaAs FET Scan PDF
    TIM1011-10L Toshiba FET, Microwave Power GaAs FET Transistor, ID 11.5 A Original PDF
    TIM1011-10L Toshiba TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power Original PDF
    TIM1011-15 Toshiba Internally Matched Power GaAs FET (X, Ku-Band) Original PDF
    TIM1011-15 Toshiba TRANS JFET 15V 5500MA 3(2-11C1B) Scan PDF
    TIM1011-15L Toshiba FET, Microwave Power GaAs FET Transistor, ID 11.5 A Original PDF
    TIM1011-15L Toshiba P1dB=42.0dBm at 10.7GHz to 11.7GHz Original PDF
    TIM1011-2 Toshiba FET, Microwave Power GaAs FET Transistor, ID 2.6 A Original PDF
    TIM1011-2 Toshiba TIM1011 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power Original PDF
    TIM1011-2L Toshiba FET, Microwave Power GaAs FET Transistor, ID 2.6 A Original PDF
    TIM1011-2L Toshiba TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-9D1B, 3 PIN, FET RF Power Original PDF
    TIM1011-2UL Toshiba TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1011-4 Toshiba Internally Matched Power GaAs FET (X, Ku-Band) Original PDF
    TIM1011-4 Toshiba TIM1011 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power Original PDF
    TIM1011-4L Toshiba FET, Microwave Power GaAs FET Transistor, ID 5.2 A Original PDF
    TIM1011-4L Toshiba TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1011-4UL Toshiba TIM1011 - TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power Original PDF
    TIM1011-5 Toshiba Internally Matched Power GaAs FET (X, Ku-Band) Original PDF
    ...

    TIM1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM1213

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET


    Original     		PDF TIM1213-10L TIM1213

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1314-9L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


    Original     		PDF TIM1314-9L 75GHz -25dBc 33dBm

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1011-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=9.0 dB at 10.7 GHz to 11.7 GHz


    Original     		PDF TIM1011-8UL

    TIM1414-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1414-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1414-4 MW50280196 TIM1414-4

    TIM1112-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-8 2-11C1B) MW50200196 TIM1112-8

    TIM1213-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-4 MW50220196 TIM1213-4

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM1414-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 14.0GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 14.0GHz to 14.5GHz n LOW INTERMODULATION DISTORTION


    Original     		PDF TIM1414-18L -25dBc 36dBm 25GHz

    TIM1213-10

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-10 M1213-10 2-11C1B) MW50260196 TIM1213-10

    TIM1112-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM1112-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1112-4 MW50190196 TIM1112-4

    TIM1213-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original     		PDF TIM1213-8 2-11C1B) MW50240196 TIM1213-8

    TIM1011-4L

    Abstract: No abstract text available
    Text: TOSHIBA TIM1011-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 10.7 GHz to 11.7 GHz


    Original     		PDF TIM1011-4L MW50100196 TIM1011-4L

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


    OCR Scan     		PDF TIM1414-4LA-371 TIM1414-4LA-371

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1414-4 MW50280196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm


    OCR Scan     		PDF TIM1414-7-252 IGS---72pA

    5252 F ic

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0


    OCR Scan     		PDF TIM1414-5-252 -72jjA 5252 F ic

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1011-5 MW50110196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


    OCR Scan     		PDF TIM1011-15L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-4 MW50190196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids


    OCR Scan     		PDF TIM1414-15-252 145mA 2-11C1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-8L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 10.7 GHz to 11.7 GHz


    OCR Scan     		PDF TIM1011-8L 011-8L MW50130196

    Untitled

    Abstract: No abstract text available
    Text: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM1213-15L 2-11C1B) 213-15L

    TS 4142

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1414-2 MW50270196 TS 4142

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4A Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G 1dB = 6.5 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		PDF TIM1414-4A MW50290196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0


    OCR Scan     		PDF TIM1414-7-252