VEB Keramische Werke
Abstract: keramische Werke Hermsdorf hermsdorf ker 221 ABB TKC ker 221 din 40685 Scans-048 VEB M ik ro e le k tro n ik Werke Hermsdorf "keramische werke"
Text: VEB KERAMISCHE WERKE HERMSDORF — HERMSDORF/THÜRINGEN VEB KERAMISCHE WERKE HERMSDORF - H E R M S D O R F / THÜR 7 T IKWH1 DIN-Kondensatoren Miniatur-Kondensatoren Spezialtypen Trimmer H o c h l e i st u n g s - K o n d e n s a t o r e n KATALOG HFKo . D ra h tw o rt: Kaw eha H e rm sd o rfth ü r.
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VEB Keramische Werke
keramische Werke Hermsdorf
hermsdorf
ker 221
ABB TKC
ker 221 din 40685
Scans-048
VEB M ik ro e le k tro n ik
Werke Hermsdorf
"keramische werke"
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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siemens rs 3060 cj
Abstract: TRIODE RS 1016 siemens rs 3300 cj Siemens RS1006 siemens rs 3010 siemens rs 3005 rs 1006 b siemens tube RS1064C siemens rs 3040 cl siemens rs 3150 cj
Text: SIEM ENS Datenbuch 1976/77 Generatorröhren SIEMENS Generatorröhren und Zubehör Datenbuch 1976/77 Generatorröhren werden seit vielen Jahren in HF-Generatoranlagen einge setzt, die in der Industrie die verschie denartigsten Aufgaben zu erfüllen haben.
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3000er-Serie,
siemens rs 3060 cj
TRIODE RS 1016
siemens rs 3300 cj
Siemens RS1006
siemens rs 3010
siemens rs 3005
rs 1006 b siemens tube
RS1064C
siemens rs 3040 cl
siemens rs 3150 cj
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K40C
Abstract: HFA70N
Text: NTfKNA*. y-i* ,T M International Iö R Rectifier HEXFRED |p £ Y @ T c P o rt V RRM Num ber * J C P * f pkg- VF * @ I FM I r @ V r WM M a x ‘ 1 RRM M a x . t „ V (A) (C) (A ) (/j A ) (A) P * ' pkg. (nS) (°C /W ) N otes Fax on Dem and Num ber Case
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HFA80N
HFA70N
HFA120M
HFA160M
HFA200M
HFA100M
D-61-8
D-61-8-SM
O-249AA
D-61-8-SL
K40C
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Untitled
Abstract: No abstract text available
Text: PD-2.460 International ^R ectifier HFA70NK60C Ultrafast, Soft Recovëry Diode HEXFRED" BASE COMM 3N CATHODE Features VR = 600V c5 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 520nC 2 ¡3
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HFA70NK60C
520nC
80A/ps
Liguria49
4ASS452
002na0
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Tektronix 7603
Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Text: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO
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CB-19
Tektronix 7603
109T2
43p transistor
Tektronix
108T2
t2109
AL 108 transistor
7603
sonde de temperature
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RS1026
Abstract: RS1064C SRS 4451 siemens datenbuch "WF Berlin" srs 360 RS1002A yl 1050 tetrode siemens rs 1007 RS1046 RS1072C
Text: S IE M E N S Datenbuch 1980/81 gsgekühlt • for t • wassergekü ühlt * verdamp ühlt • siedekor nsgekühlt *stra i r e r i ü h " • K i • ssergeku ühlt * verdamp ühlt * sied ikon nsgekühlt *stra gs skühlt • for t * wassergekü :ühlt • verde p
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2322151
Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Text: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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bbS3T31
BLF221B
MSB009-
MBA379
URA310
2322151
M8807
philips 2222 115 13102
BLF221B
URA310
philips resistor 2322
BLF221
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21-1 TGL 24815
Abstract: EBD TGL 24687 TGL 24815 25602 tgl 24685 27231 TGL 24687 Koweg 200157 ddr veb
Text: electronic Steckverbinder F e rtig u n g s b e trie b fü r R undsteckverbinder: VEB Elektronische Bauelem ente, Dorfhain, 8211 Dorfhain, Talstraße 7 K a ta lo g Nr. 3.1. A u s g a b e 1971 H e rs te llu n g : A b t. W e rb u n g und Messen, T eltow Technischer In h a lt: VEB Elektronische B a u e le m en te D o rfh a in
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siemens rs1002A
Abstract: RS1002A YL-1050 RS1072C siemens rs 1002A Q81-X1410 kg391 siemens triode yl1010 siemens datenbuch
Text: SIEMENS Datenbuch 1976/77 I Senderöhren In h a lts v e rz e ic h n is A u s w a h lta b e lle Ä q u iv a le n te R ö h re n ty p e n S y m b o lv e rz e ic h n is E rlä u te ru n g e n zu d en te c h n is c h e n D a te n D a te n b lä tte r RS 5 23 bis RS 1082 C
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service-mitteilungen
Abstract: servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" Scans-048 Leipzig diode sg 5 ts tonband b 100
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N D FU N K U N D FERNSEHEN iR im r i j r a d i o - t e / e v ls lo n AUSGABE: | SEPTEMBER f t / SEITE 1 - 8 H P H P 14*4Ä>43,/V fe M it dem " Y U N 0 S T 401 " w ird e in w e ite r e r tra n sp o r ta b le r Fernsehem pfänger
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2SC4666
Abstract: No abstract text available
Text: TO SH IBA 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. nFE = ouu ~ _ nT Tig* _1.n 1_njPE • • • 2.1 ±0.1 1_ High Voltage High Collector Current
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2SC4666
150mA
2SC4666
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P1y transistor
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.
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ZTX1056A
P1y transistor
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smm0204
Abstract: No abstract text available
Text: VISHAY METAL FILM, CYLINDRICAL SMM0204 - MS1 Features • stable m etal film on high q uality ceram ic • low TC and tig h t tolerances • excellent sta bility at different environm ental conditions • force fitted steel caps,tin plated on nickel b arrie r
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SMM0204
10OOh
1000h
332KQ
140400/IEC
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2SA571
Abstract: 2SC89 TRANSISTOR 318a 154B 352A EP-205
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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100MHz
100MHz)
2SA571
2SC89
TRANSISTOR 318a
154B
352A
EP-205
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ccont
Abstract: TK11900M DB3-F026
Text: m 1. m 2. £ « * tt ÌÉ m m 3 . ti 4 . ffi 5. * 6 . ft 7. § 8 . 'S 9. m ± 5È % » & ta % & « i o . t: 1 1 . 7 > n es s V 9 m 1 2 . Â » JÈ « & tf» W 1 3 . jm - t m * 14. 1 5. 16. 17. tü « ft SE |»a&SA*JK9&vx2rffi í © fifi 1 H & ft lg | T
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DB3-F026
OT-23L)
JDB3-F026
90-1301C,
ccont
TK11900M
DB3-F026
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient
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MJE18002D2/D
MJE18002D2
MJE18002D2
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dl 0265
Abstract: tbl 6/6000 RECTIFIER GI rs tube wia36 philips tubes
Text: PHILIPS TRIODE for use in television transmitters, A.M. or P.M. transmitters or industrial H.F. generators TRIODE pour utilisation dans émetteurs de télévision, émetteurs A.M. ou F.M., ou générateurs H.F. industriels TRIODE zur Verwendung in Fernsehsendern, AM-oder FM-Sendern, oder in HF-Industriegeneratoren
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Untitled
Abstract: No abstract text available
Text: e u DEC Technische Information / Technical Information !Ü£££. FZ 2400 R 17 KF6 B2 Hfvb vorläufige Daten preliminary data H ö ch stzu lässig e W erte Elektrische Eigenschaften / M axim um rated values /Electrical properties K o lle k to r-E m itte r-S p e rrs p a n n u n g
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FZ246B
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information applikation
Abstract: information applikation mikroelektronik mikroelektronik applikation mikroelektronik information applikation mikroelektronik heft applikation heft ADZ12 Transistoren DDR mikroelektronik DDR mikroelektronik Heft 12
Text: m o f r ^ t ^ e l E l - c t e n a n i l - t Information Applikation C 570 D C 571 D Schnelle 8- und 10 BitA n a lo g -D ig ita lW a n d le r m t m io ik ^ t s io lB ^ t t s n a n il- c Information Applikation HEFT : 38 C 5 ? 0 D + C 5 7 1 D — Schnelle 8- und 10 B it —
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LT 220D
Abstract: IS2472 Kombinat VEB A 902 A220D VEB Kombinat service-mitteilungen 10V72 servicemitteilungen stern R 160 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Text: SERVICE-MITTEILUNGEN SEITE FEBRUAR mwmIr a d i o television | 1976 CM VEB IN DU STRIEVERTRIEB RU N D FU N K UND FE RN SE H EN - 1 - 8 M itte ilu n g au s dem VEB KOMBINAT STERN-RADIO BERLIN / STAMMBETRIEB "STERN RECORDER" R 160 m it L e u c h td io d e z u r B a tt e r i e s p a n n u n g s k o n tro lle
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10V72
LT 220D
IS2472
Kombinat VEB A 902
A220D
VEB Kombinat
service-mitteilungen
10V72
servicemitteilungen
stern R 160
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
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service-mitteilungen
Abstract: servicemitteilungen Tesla Service Mitteilungen Scans-048 Mitteilungen din 45-500 SF225 MP20A R1173
Text: SIRVICI-MITTEI LUNGEN r a d i o -television n V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N AUSGABE: SEITE MAI Radeberg 74 i s t d ie B ezeich n u ng des neuen H eim em pfängers, den d e r VEB R o b o tro n E l e k t r o n i k R adeberg i n diesem J a h r a u f den M arkt b r i n g t . Das G e rä t
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transistor l1w
Abstract: LAG552 ma 117d mitsumi dc motor as speed governor LAG552-2 mitsumi dc motor mitsumi dc motor r-14
Text: MI TSi mr ELECTRONICS CORP 75 \* Ä J 1 ,/mt: DêT fc.SSDa7S D O O l l b ? fi | ï-52-13-25 yttfflM/DC Motor Speed Control Monolithic 1C LAG552-2 LAG552 is a motor speed control IC operated with a low voltage of Vcc=1.8V min., and by using LAG552, higly accurate electronic
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LAG552
LAG552,
LAG552-2
3900ppm/
100/mA
transistor l1w
ma 117d
mitsumi dc motor as speed governor
LAG552-2
mitsumi dc motor
mitsumi dc motor r-14
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2N6306
Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching
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2N6306
2N6307,
2N6308
2NS306
2N6307
--2N6306,
2N6308
2N6306
2N6307
zn63
2N6307 Motorola
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