Untitled
Abstract: No abstract text available
Text: Preliminary v1.2 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package
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Can46
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0116 solar 4 pins
Abstract: RP1280
Text: Preliminary v1.1 RadTolerant RAD-PAK Field Programmable Gate Arrays Features Radiation Characteristics • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability – Can Improve TID 2-10x Over Standard Package
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CQFP 256 PIN actel
Abstract: RT1280A A1280A VKS rt1280 A1020B ACTEL A1280A A1020 transistor A1280A-CQ172C RT1460 actel 172 cqfp
Text: v3.1 RadTolerant FPGAs Features General Characteristics • • • • • • Tested Total Ionizing Dose TID Survivability Level No Single Event Latch-Up Below a Minimum LET (Linear Energy Transfer) Threshold of 80 MeV-cm2/mg for All RT (RadTolerant) Devices
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84-Pin,
132-Pin,
172-Pin,
196-Pin,
256-Pin
CQFP 256 PIN actel
RT1280A
A1280A VKS
rt1280
A1020B
ACTEL A1280A
A1020 transistor
A1280A-CQ172C
RT1460
actel 172 cqfp
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CQFP 256 PIN actel
Abstract: ACTEL A1280A
Text: v3.1 RadTolerant FPGAs Features General Characteristics • • • • • • Tested Total Ionizing Dose TID Survivability Level No Single Event Latch-Up Below a Minimum LET (Linear Energy Transfer) Threshold of 80 MeV-cm2/mg for All RT (RadTolerant) Devices
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84-Pin,
132-Pin,
172-Pin,
196-Pin,
256-Pin
CQFP 256 PIN actel
ACTEL A1280A
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actel 14100
Abstract: A1020B
Text: v3.0 RadTolerant FPGAs Fe a t ur es Gener al C har act er is t ics • 100% Resource Utilization with 100% Pin-Locking • Tested Total Ionizing Dose TID Survivability Level • Secure Programming Technology Prevents Reverse Engineering and Design Theft
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84-Pin,
132-Pin,
172-Pin,
196-Pin,
256-Pin
actel 14100
A1020B
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RT14100A
Abstract: rt1280 VKS FPGA CQFP 172 RT1280A CQFP 172 PIN 172-PIN A1280A VKS RT1460 VKS FPGA CQFP 106 A1020B
Text: v3.1 RadTolerant FPGAs Features General Characteristics • • • • • • Tested Total Ionizing Dose TID Survivability Level No Single Event Latch-Up Below a Minimum LET (Linear Energy Transfer) Threshold of 80 MeV-cm2/mg for All RT (RadTolerant) Devices
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84-Pin,
132-Pin,
172-Pin,
196-Pin,
256-Pin
RT14100A
rt1280
VKS FPGA CQFP 172
RT1280A
CQFP 172 PIN
172-PIN
A1280A VKS
RT1460
VKS FPGA CQFP 106
A1020B
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Untitled
Abstract: No abstract text available
Text: CY7C64225 USB-to-UART Bridge Controller USB-to-UART Bridge Controller • Full device operation from a single voltage supply of 3.3 V or 5 V Universal Serial Bus USB Integration ❐ Full-Speed USB peripheral compliant with USB2.0 specification ❐ USB-IF certified with TID 40001425
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CY7C64225
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Untitled
Abstract: No abstract text available
Text: CY7C64225 USB-to-UART Bridge Controller USB-to-UART Bridge Controller • Full device operation from a single voltage supply of 3.3 V or 5 V Universal Serial Bus USB Integration ❐ Full-Speed USB peripheral compliant with USB2.0 specification ❐ USB-IF certified with TID 40001425
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CY7C64225
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imo plc cable rs232
Abstract: RS232 TTL self powered transceiver rs232 driver receiver rx1 tx1 android CY7C64225
Text: CY7C64225 USB-to-UART Bridge Controller USB-to-UART Bridge Controller • Full device operation from a single voltage supply of 3.3 V or 5 V Universal Serial Bus USB Integration ❐ Full-Speed USB peripheral compliant with USB2.0 specification ❐ USB-IF certified with TID 40001425
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CY7C64225
28-pin
imo plc cable rs232
RS232 TTL self powered
transceiver rs232 driver receiver
rx1 tx1 android
CY7C64225
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Untitled
Abstract: No abstract text available
Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite
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STRH100N6
O-254AA
STRH100N6HY1
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MIL-STD-750E
Abstract: malaysia 3916 mosfet STRH100N6FSY01 STRH100N st diode marking code TO3
Text: STRH100N6 N-channel 60 V, 0.012 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened
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STRH100N6
O-254AA
STRH100N6FSY1y
MIL-STD-750E
malaysia 3916 mosfet
STRH100N6FSY01
STRH100N
st diode marking code TO3
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Untitled
Abstract: No abstract text available
Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA
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STRH100N6
O-254AA
STRH100N6HY1
DocID18353
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RT1280A
Abstract: actel a1020b A1425A 2284r RT14100A CQFP 172 PIN A1020B
Text: v 3. 0 RadTolerant Field Programmable Gate Arrays Features General Characteristics • Tested Total Ionizing Dose TID Survivability Level • No Single Event Latch-up Below a Minimum LET Threshold of 80 MeV-cm2/mg for All RT Devices • Packages: 84-Pin, 132-Pin, 172-Pin, 196-Pin, and 256-Pin
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84-Pin,
132-Pin,
172-Pin,
196-Pin,
256-Pin
RT1280A
actel a1020b
A1425A
2284r
RT14100A
CQFP 172 PIN
A1020B
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Untitled
Abstract: No abstract text available
Text: STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS on Qg 60 V 80 A 12 mΩ 134.4 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite
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PDF
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STRH100N6
O-254AA
STRH100N6HY1
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Untitled
Abstract: No abstract text available
Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA
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STRH100N6
O-254AA
STRH100N6HY1
DocID18353
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am-008
Abstract: MIL-STD-750E STRH100N6H
Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA
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PDF
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STRH100N6
O-254AA
STRH100N6HY1
STRH100N6HYG
DocID18353
am-008
MIL-STD-750E
STRH100N6H
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abstract for battery level indicator
Abstract: MAX1737 AN3841 APP3841
Text: Maxim > App Notes > BATTERY MANAGEMENT Keywords: charger, lithium-ion, Ii+, battery Jun 23, 2006 APPLICATION NOTE 3841 Improving Accuracy of the MAX1737 Lithium-Ion Battery Charger Abstract: This application note describes how to improve full-scale current-sense and charge-termination
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MAX1737
249mA
com/an3841
MAX1737:
AN3841,
APP3841,
Appnote3841,
abstract for battery level indicator
AN3841
APP3841
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HCL ME 1014
Abstract: No abstract text available
Text: Æ 9c t e ! P re lim in a ry RadTolerant RAD-PAK Field Programmable Gate Arrays F e a tu re s R a d ia tio n C h a r a c te r is t ic s • RAD-PAK® Package Technology from Space Electronics, Inc. • Improved Total Ionizing Dose TID Survivability - Can Improve TID 2-10x Over Standard Package
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RP14100A,
A14100A
HCL ME 1014
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Untitled
Abstract: No abstract text available
Text: RadTolerant Field Programmable Gate Arrays Features • Programming Technology Prevents Reverse Engineering and Design Theft General Characteristics • • TestedTotal Ionizing Dose TID Survivability Level • Packages: 132-Pin, 172-Pin, 196-Pin, and 256-Pin Ceramic
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132-Pin,
172-Pin,
196-Pin,
256-Pin
CQ256,
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2609 al
Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
Text: POUEREX INC TID D • TS^MbSl ODDlflfiO 5 m Thyristor Assemblies-Water Cooled Assembly Module Type PTL6T620_ 15 _ 20 _30 PTL6T625_ 25 _30 _40 PTL7T720 _ 35 _ 45 _ 55 PTL7T7S0_55 _ 65 _ 75 PTL9T9G0_ 08 — — 10 _12
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PTL6T620_
PTL6T625_
PTL7T720
PTKATA20_
2609 al
KT 708
459 MARKING sot89
powerex ks
powerex kt
THYRISTOR br 403
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Untitled
Abstract: No abstract text available
Text: Æ ic te ! RadTolerant Field Programmable Gate Arrays - m Features • Programming Technology Prevents Reverse Engineering and Design Theft General Characteristics • • TestedTotal Ionizing Dose TID Survivability Level • Packages: 132-Pin, 172-Pin, 196-Pin, and 256-Pin Ceramic
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132-Pin,
172-Pin,
196-Pin,
256-Pin
CQ172
CQ196
CQ256
CCS08and
CQ256,
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Untitled
Abstract: No abstract text available
Text: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package
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CQ172
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R1127
Abstract: 28R1127-500
Text: IMPEDANCE Z Frequency 25 MHz Nominal (REF) 40 Minimum i- E I I t 100 MHz 300 MHz 110 88 265 Q O Q Q n Q Z vs. FREQUENCY (REF. ONLY) D 1 SEE DETAIL A S EC TID N A-A UNCONTROLLED DOCUMENT FREQUENCY (M H z) AGILENT E4991A knpadanoaflMaMal Analyzer HP 16O02A Tart Fixture. REF #3843
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28R1127-500
E4991A
16O02A
28R1127â
R1127
R1127
28R1127-500
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RT1280A-CQ172E
Abstract: RT1280A-CQ172 RT1280A
Text: RadTolerant Field Programmable Gate Arrays F e a tu re s • Secure Programming Technology Engineering and Design Theft G e n e r a l C h a r a c te r is t ic s Prevents Reverse • Permanently Programmed for Instantaneous Operation on Power-Up • Tested Total Ionizing Dose TID Survivability Level
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132-Pin,
172-Pin,
196-Pin,
256-Pin
RT14100A,
A14100A
RT1280A-CQ172E
RT1280A-CQ172
RT1280A
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