a11u
Abstract: taser circuit 42-PIN DD1752
Text: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.
|
OCR Scan
|
PDF
|
MSM51V16160_
576-Word
16-Bit
MSM51V16160
cycles/64ms
a11u
taser circuit
42-PIN
DD1752
|
MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSC23436-xxBS12/DS12 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23436-xxBS12/D S12 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access M em ory M odule composed of eight 16-Mb DRAM s in SOJ M SM 5117400 packages and four 4-Mb
|
OCR Scan
|
PDF
|
MSC23436-xxBS12/DS12
304-Word
36-Bit
MSC23436-xxBS12/DS12
16-Mb
MSM5117400)
MSM514100B)
72-pin
MSM5117400
|
msm7520
Abstract: No abstract text available
Text: G EN ERA L DESCRIPTION The MSM7602 is an im proved version of the MSM7520 w ith the same basic configuration. The MSM7602 uses a 19.2 M Hz clock frequency to m eet PHS, the 3 V pow er supply 2.7 V to 5.5 V , and com pact packaging. Also, this device adds the how ling detecter control pins and m ain cleek
|
OCR Scan
|
PDF
|
MSM7602
MSM7520
MSM7520/7620
MSM7602
MSM7602-001
/002GS-K
|
Untitled
Abstract: No abstract text available
Text: O K I electronic components OLP124 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD124 is a high-output GaAs infrared light emission mindiode sealed with a transparent resin in a TO-18 metal case. Its light emission wave is peaks at 940 nm. Because of its sharp directivity,
|
OCR Scan
|
PDF
|
OLP124
OLD124
OLD12410Â
b7E4240
OLD124
ti72424D
|