Untitled
Abstract: No abstract text available
Text: / SGS-THOMSON 7 ra«M S»iD(S STPR310 STPR320 ULTRA FAST RECOVERY RECTIFIER DIODES . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILiTY ■ HIGH AVALANCHE ENERGY CAPABILITY DESCRIPTION Low cost single chip rectifier suited for switchmode
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STPR310
STPR320
15hange
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Untitled
Abstract: No abstract text available
Text: STPR310 STPR320 SGS-THOMSON ¡y ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIM E ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY D E S C R IP T IO N Low cost single chip rectifier suited for switchmode
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STPR310
STPR320
7T2T237
STPR310/STPR320
lrj-25Â
Ti-125Â
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STPS3045CM
Abstract: No abstract text available
Text: f i z z SG S -TH O M SO N ^ 7 # *l m [l T ri!a ® « S STPS3045CM _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 2x15 A If (a v V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ . ■ ■ VERY SMALL CONDUCTION LOSSES
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STPS3045CM
0E-05
Ti-125
00b0434
STPS3045CM
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type
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QM30HA-H
E80276
E80271
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30S3
Abstract: CT03 M106 T151 SIP11 msje
Text: 1 D I 3 O O Z - 1 O O 3 0 0 A ✓< 7 - W Jfé T fü POWER TRANSISTOR MODULE * « •$$:§: : Features • ¡S R / E , ■',6 , 16 J :i High Voltage r 0 7 ij l) ' s ÿ ÿ ' f $■— K rt Including Free W heeling Diode • ASO A '7 £ l' Excellent Safe Operating Area
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19S24
95t/R89
Shl50
30S3
CT03
M106
T151
SIP11
msje
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transistor eb 2030
Abstract: 300V1 diode ti125
Text: M ITSUBISHI TRAN SISTO R M ODULES f ! QM300HA-HB ! H IG H P O W E R S W IT C H IN G U S E f IN SU LA TED T Y P E { i QM300HA-HB • Ic • V cex • h FE Collector current. Collector-emitter voltage. DC current gain.
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QM300HA-HB
E80276
E80271
300V1
transistor eb 2030
diode ti125
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type
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QM30CY-H
30CY-H
E80276
E80271
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QM10TE-HB
Abstract: bup transistor bvp DIODE QM10 QM10T
Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250
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QM10TE-HB
E80276
E80271
QM10TE-HB
bup transistor
bvp DIODE
QM10
QM10T
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