Thyristor ys 130
Abstract: No abstract text available
Text: SKKT 280, SKKH 280 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 new Thyristor / Diode Modules SKKH 280 SKKT 280 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'%
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 18 Oct, 2004 Data Sheet Issue:- 2 IXYS Company Phase Control Thyristor Types N0606YS200 to N0606YS250 Old Type No.: N282SH20-22 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1
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N0606YS200
N0606YS250
N282SH20-22
N0606YS250
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N0606YS
Abstract: N0606YS250 N282SH N0606YS200 Thyristor 606 Thyristor ys 103 Westcode N thyristor Semiconductors Westcode thyristor
Text: WESTCODE An Date:- 18 Oct, 2004 Data Sheet Issue:- 2 IXYS Company Phase Control Thyristor Types N0606YS200 to N0606YS250 Old Type No.: N282SH20-22 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1
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N0606YS200
N0606YS250
N282SH20-22
N0606YS250
N0606YS
N282SH
Thyristor 606
Thyristor ys 103
Westcode N thyristor Semiconductors
Westcode thyristor
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Untitled
Abstract: No abstract text available
Text: YS Thyristor Modules Thyristor/Diode Modules MCC 312 MCD 312 ^TRMS ^TAVM V RRM VRSM VRRM v DSM ^D R M V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC 312-12io1 MCC 312-14io1 MCC 312-16io1 MCC 312-18io1 Test Conditions ^TAVM’ ^FAVM Tc = 85°C; 180°!sine
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312-12io1
312-14io1
312-16io1
312-18io1
flb22h
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GTO thyristor
Abstract: GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO
Text: , A B B S E M I C O N D U C TORS Asymmetric GTO Thyristors AG 001bß3ö 0000036 1 B A B B _ _ 3 6 E J>. Asymmetrische GTO Thyristoren Free-floating silicon High-dynamic voltage capability at turn-off Low on-state and switching losses Coaxial gate leads soldered
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Q000Q36
Vorm815
GTO thyristor
GTO ABB
ABB GTO CSG
THYRISTOR GTO
GTO thyristor ABB
abb ys thyristor
CSG-601
THYRISTOR DE PUISSANCE
601-25-A
ABB GTO
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Untitled
Abstract: No abstract text available
Text: 4bflb22b □OQlbb'l TS2 H I X Y DIXYS < < < ! I Thyristor Modules Thyristor/Diode Modules V mm Vo», V 500 700 900 1300 1500 1700 1900 400 600 000 1200 1400 1600 1600* MCC72 MCD72 iTAV= 2 x 85 A VRRM= 400-1800 v Type Version 1 B MCC72-064O1 MCC72-08ÌO1 MCC72-12Ì01
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4bflb22b
MCC72
MCD72
MCC72-064O1
MCC72-08Ã
MCC72-12Ã
MCC72-14Ã
MCC72-16Ã
MCC72-18io1
MCC72Â
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abb ys thyristor
Abstract: ABB thyristor modules ABB Thyristor YST Thyristor ys 150 Thyristor ys YSTT6-01 ABB thyristor ys ABB thyristor ystt6-01 Thyristor ABB ys 150 Thyristor ys 130
Text: A B B PRIVES □OlbSSS GOOOOlt. 1 54E D ABB Drives- MODULES - Thyristor modules MODULE - Thyristor-Module MODULES - Modules de thyristors ff Cat.No. Bestellnummer n°Cat. “ Type Typ Type It s m ItB M S ! Toaso ^TAV / ^ ra s a 10ms T vj max A A °C A °C
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YSTT2-03
201-XX
YSTT6-01
YSTT6-22
YS150202-XX
00V/fjis
000V/jxs
YSDD3-02
abb ys thyristor
ABB thyristor modules
ABB Thyristor YST
Thyristor ys 150
Thyristor ys
ABB thyristor ys
ABB thyristor ystt6-01
Thyristor ABB ys 150
Thyristor ys 130
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Untitled
Abstract: No abstract text available
Text: GATE TURN-OFF THYRISTOR SG1500 R,U,W 22 CH OPPER, INVER TE R A P P L I C A R I O N . Repetitive Peak Off-State Voltage Unit in mm : V d r m =1300, 1600, R.M.S On-State Current :It (RMS) = 55 0A Peak Turn-Off Current :l TGQM= 1500A 180 0V 2 - j* 3 .6 ± 0 .2
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SG1500
01OMAX
l000V/ns
SGI500R22
SG1500U22
SGI500W22
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JIS Z 1522
Abstract: jis z 1522 CT
Text: M ITEL DCR1673SZ Phase Control Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4650 - 3.3 DS4650 - 4.0 April 199 Features • Double Side Cooling. • High Surge Capability. • High Mean Current. • Fatigue Free. Key Parameters 2800V DRM 3600A
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DS4650
DCR1673SZ
5000A
500mA,
DCR1673SZ28
DCR1673SZ27
DCR1673SZ26
DCR1673SZ25
DCR1673SZ24
JIS Z 1522
jis z 1522 CT
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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semikron SKFT 150
Abstract: No abstract text available
Text: 3bE D : SEMIKRON INC • a i 3 bb?l Q Q Q 2 3 5G S M S E K G -ras-^ Vdrm V rrm Tv| = 125 °C Itrms (maximum values for continuous operation) 350 A 350 A Itav (sin. 180; Tease = 76°C; 50 Hz) 150 A 150 A V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT SKFH 150/08 DS
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SKFT150
fll3bb71
semikron SKFT 150
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thyristor TAG 20 600
Abstract: SM3GZ46 SM3G
Text: BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3 G,J Z46 AC POWER CONTROL A P P L I C A T I O N S . Unit in mm . Repetitive Peak Off-State Voltage : VpRM=400,600V . R.M.S On-State Current : 1t (RMS)=3A . High Commutation (dv/rit) . Isolation Type (V 1S0L=1500V, AC)
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SM3GZ46
SM3JZ46
thyristor TAG 20 600
SM3GZ46
SM3G
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SEMICONDUCTOR TECHNICAL DATA MCR264-4 thru MCR264-10 Thyristors Silicon Controlled Rectifiers SCRs 40 AMPERES RMS 200 thru 800 VOLTS . . . designed for back-to-back SCR output devices for solid state relays or applications requiring high surge operation.
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MCR264-4
MCR264-10
MCR264-6
MCR264-8
MCR264-4
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SG1500GXH22
Abstract: m3300
Text: SG150 MFXF,GXH 22 C HOPPER, GATE TURN-OFF THYRISTOR I N V ER TE R A Y P L I C A T I O N Unit in mm . Repetitive Peak Off-State Voltage : V d r M=3300, 4 500V . R.M.S On-State Current : It (RMS)=600A . Peak Turn-Off Current : It GQM= 1500A . Critical Rate of Rise of On-State Current
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SG150
00V/fjs
SGI500FXF22
SG1500GXH22
SG1500
m3300
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TT 2206 replacement
Abstract: tisp61512 Thyristor ys 170
Text: TISP61511D, TISP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS JULY 1995- REVISED FEBRUARY 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION Dual Voltage-Programmable Protectors. - Wide 0 to -80 V Programming Range - Low 5 mA max. Triggering Current
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TISP61511D,
TISP61512P
T-001089
RLM88/I3124
TR-NWT-001089
61511D
81512P
TR-NWT-001D89
TT 2206 replacement
tisp61512
Thyristor ys 170
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CR2AM-10
Abstract: CR2AM CR2AM10 160i t 1601 thyristor 2A280 CR2AM1 mITSUBISHI FANS
Text: MITSUBISHI THYRISTOR CR2AM LOW PO W ER , GENERAL USE LEAD-MOUNTED TY PE D E S C R IP T IO N O U T L IN E D R A W IN G Dimension : mm Mitsubishi type C R 2 A M -1 ~ 1 2 are all diffused junction type thyristors for use in low power control and rectification.
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Thyristor ys 150 105
Abstract: M5 DIODE Thyristor ys 150
Text: 5 ; » • 9f T ‘ ?k SCR Inverters International I%2R Rectifier Thyristor/Diode, Fast Doubler Circuii Positive Control INT-A-Pak 1RKH FI02-12 1200 105 105 90 2400 :5oo 20 and 25 0.085 2 14 I 7 87097 IRKH F102-06 600 105 105 90 2400 2500 20 and 25 0 085
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FI02-12
F102-06
1RKHF102-08
FI32-04
F152-04
HF152-08
JRKHF72-06H
F82-04H
HF82-08H.
00V/ps
Thyristor ys 150 105
M5 DIODE
Thyristor ys 150
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abb ys thyristor
Abstract: Thyristor ABB ys 150 ABB thyristor ys
Text: 4bE D • 4bflb22b OOGlEM'i û « I X Y I X Y S CORP □IXYS *T Data Sheet No.911001A November 1991 Three-Phase Diode Rectifier Bridge with Thyristor VUC25 FEATURES: • Fast Recovery Diodes to Reduce EMI • Separate Thyristor for "Soft Start" • Isolated Direct Copper Bond Base Plate
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4bflb22b
11001A
E72873M)
VUC25
abb ys thyristor
Thyristor ABB ys 150
ABB thyristor ys
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Application Note 23
Abstract: SG1200EX23
Text: GATE TURN-OFF THYRISTOR SG1200 R,U,W,EX 23 CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage : VDRM= 1 300,1600,1800,2500V . R.M.S On-State Current : lT(RMS)=400A . Peak Turn-Off Current : ItGQH=1200A . Critical Rate of Rise of On-State Current
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SG1200
50A/ys
SGI200R23
SG1200U23
SG1200W2
SG1200EX23
Application Note 23
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NEC 5p6
Abstract: 5P6J 5P4J
Text: SEC / DATA SHEET / THYRISTORS ELECTRON DEVICE _ _ 5P4J,5P6J 5 A SMALL MOLD THYRISTOR D E SC R IPTIO N The 5P4J and 5P6J are P gate ali diffused mold type Thyristor granted 5 Amps On-state Average Current T c = 9 5 °C , w ith rated voltages up to 6 0 0 volts.
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Untitled
Abstract: No abstract text available
Text: GATE TURN-OFF THYRISTOR SG2500 FXF,GXH 21 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit in mm . Repetitive Peak Off-State Voltage VDRM=3300,4500V . Repetitive Peak Reverse Voltage V d RM=3000,4000V . R.M.S On-State Current It (RMS)=8°0A . Peak Turn-Off Current
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SG2500
00A//Js
SG2500FXF21
SG2500GXH21
SG2500FXF21
SG2500GXH21
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Untitled
Abstract: No abstract text available
Text: •Avalanche Diodes T a = 2 5 'C Absolute M axim um Ratings Vnt IZSM Type No. H ‘ IV ) instantaneous 40 IR IH1H 1 F lft is iA ( >* A) t^ A ) No. 130 RY 23 ^00 RY 24 400 " Instantaneous max max 1 Ps 5 60 to 70 135 to 180 4u to+ i 50 (V) 227 300 10 50
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rgk20
Abstract: No abstract text available
Text: GATE TURN-OFF THYRISTOR SG500 FXF,GXH 21 TENTATIVE DATA CHOPPER, INVERTER APPLICATION Unit 2 -03 .6± O .2 ’ 11KKP 2^6 ±0.4 V d rM = 3 3 0 0 ,4 5 0 0 V Repetitive Peak Off-State Voltage VRRM =3 0 0 0 , 4 0 0 0 V Repetitive Peak Reverse Voltage Tt(RMS)=200A
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SG500
11KKP
SG500FXF21
SG500GXH21
SG500CXH21
00A//Js
-20A/
rgk20
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