2N1595
Abstract: 2n1596 2N1599 2N1597 2N1598 SCR+2N1599
Text: 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C MAXIMUM RATINGS *
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2N1595
2N1599
2N1595
2N1596
2N1597
2N1598
2n1596
2N1599
2N1597
2N1598
SCR+2N1599
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2N1595
Abstract: 2N1599 2N1596
Text: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C
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2N1595
2N1599
2N1595
2N1596
2N1597
2N1598
2N1599
2N1596
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Zener Diode c62
Abstract: how to test Triode Thyristors thyristor testing thyristor circuits application of thyristor
Text: TISP Terms and Letter Symbols Introduction Thyristor-based overvoltage protectors for telecom systems were first introduced in the late 1970s. The characteristics of thyristor SPDs Surge Protective Devices are very different than the normal SCR (Silicon Controlled Rectifier) and TRIAC (Triode for AC Control) type
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1970s.
Zener Diode c62
how to test Triode Thyristors
thyristor testing
thyristor circuits
application of thyristor
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thyristor SCR 406
Abstract: C702 C702CA C702CB C702CP C702LE C702LM C702LN C702LS C702LT
Text: High Power C702 53mm Silicon Controlled Rectifier SILICON V Ü T POWGR pf 1000 A Avg. Up To 3200 Volts A M P L IF Y IN G g a t e ¥ The C702 Reverse Blocking Thyristor now has extended voltage blocking capability through unique multi-diffusion processing of S3 mm nominal silicon
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TRIAC RCA
Abstract: triac specifications Gate turn off triac SCR TRIGGER PULSE circuit RCA THYRISTOR scr rca RCA Triacs thyristor driving circuit SCR Gate Drive turn off thyristor rca
Text: SECTION 1 SYMBOLS AND TERMINOLOGY SYMBOLS The following are the most commonly used schematic symbols for Thyristors: Name of Device Symbol G Silicon Controlled Rectifier SCR A K MT2 Triac MT1 G Thyristor Surge Protective Devices & Sidac MT1 MT2 G Programmable Unijunction
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IN457A
Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
Text: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4'!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH TX2N3032 This Amendment forms o port of M ilitary
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95GGA
2N3027
2N3032,
TX2N3027
TX2N3032
L-S-19500/419
MIL-STD-1276,
MIL-STD-1276)
5961-A230
IN457A
IN540
VAA21
MS IN540
u226
PW-250
bfi transformer
ini763
2N3028
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Untitled
Abstract: No abstract text available
Text: BYX46 SERIES A _ FAST SOFT-RECO VERY RECTIFIER DIODES • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily intended for use in high-frequency power supplies, thyristor inverters and mul :i-phase power rectifier
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BYX46
BYX46-200
BYX46-600.
BYX46-200R
BYX46-600R
BYX46
7Z1004S
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A 87L
Abstract: 2N418 2N4167 2N4183
Text: I 1 I REVERSE BLOCKING TRiODE THYRISTOR . . . multi-purpose trial, PNPN silicon controlled consumer, and muiitarv space-saving, economical @ Uniform Low-Level Forward LOW suited for, indus- Offered packages formounting in a choice of versatility. Noise-1 mmune Gate Triggering
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VF-8X
Abstract: 2N4206 2N4205 SCR 2N4204 thyristor handbook circuits re200 372a thyristor handbook W1000 2N4199
Text: MIL SPECS I C | DDGGiaS DD01773 □ | NOTICE OF VALIDATION INCH-POUND MIL-S-19500/372A ER NOTICE 1 30 September 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N4199 THROUGH 2N4206 Military specification MIL-S-19500/372A(EL), dated 5 February 1968,
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DDD1773
MIL-S-19500/372A
2N4199
2N4206
DD01774
1970ucts
5961-A117
VF-8X
2N4206
2N4205
SCR 2N4204
thyristor handbook circuits
re200
372a
thyristor handbook
W1000
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bfc,53T31 QOESaES 4 • ESE D BYX46 SERIES T - 0 3 - /9 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier
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53T31
BYX46
BYX46-200
BYX46-600.
BYX46-200R
BYX46-600R
BYX46
T-03-19
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2N4199
Abstract: 2N4206
Text: Notification of inactivation for | new design. 2 S e p t e m b e r 9 1 1 |INCH-POUND 1- H IL-S-19500/372A ER AMENDMENT 6 2 S e p t e m b er 19 9 1 SUPERSEDING AMENDMENT 5 22 June 1977 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON
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MIl-S-19500/372A
2N4199
2N4206
M1L-S-19500/372A
5961-A042)
2N4206
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thyristor tt 500 n 16
Abstract: thyristor t 500 n 1800 thyristor phase control rectifier thyristor t 500 n 18 thyristor tt 121 three phase bridge fully controlled rectifier single phase thyristor controlled rectifier DISC THYRISTOR ECONOPACK thyristor bridge circuit
Text: Type designations Thyristors IGBT: IHM & IHV modules Rectifier T 930 S 18 T M C T symmetrically blocking thyristor A asymmetrically blocking thyristor 930 limiting average forward current A at tc= 85° C 2.Letter D 1809 N 32 D 1809 N K S S fast thyristor, gatecathode interdigitated
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3 phase bridge fully controlled rectifier
Abstract: press-pack igbt tt 60 n 16 kof single phase fully controlled rectifier dc to dc chopper by thyristor thyristor control ic with current sense 3 phase rectifier thyristor bridge specification of reverse conducting thyristor asymmetric thyristor thyristor tt 121
Text: Type designations Thyristors IGBT: IHM & IHV modules Rectifier T 930 S 18 T M C T symmetrically blocking thyristor A asymmetrically blocking thyristor 930 limiting average forward current A at tc= 85° C 2.Letter D 1809 N 32 D 1809 N K S S fast thyristor, gatecathode interdigitated
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thyristor TT B6 C 110 N 12
Abstract: thyristor tt 18 N 1100 tt 250 n 16 kof F31 DIODE TD B6 HK 110 N thyristor TT 110 tt 60 n 16 kof KOF THYRISTOR disc thyristor CS 110 thyristor
Text: Type designations Type designations Rectifier diodes Thyristors T 930 s 1 8 T M C sym m etrically blocking thyristor asym m etrically blocking thyristor lim iting average forward current A at tc = 85 °C T A 930 2. letter S D 1809 N 32 T D 1809 fast thyristor,
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diode assembly
Abstract: No abstract text available
Text: Thyristor Operated Rectifier Motorized or Hand Operated Rectifier A low voltage high current DC power supply with forced air cooled A low voltage high current DC power supply with oil cooled regulator and rectifier and oil cooled transformer. oil cooled transformer.
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Mumbai-78.
diode assembly
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MCR716
Abstract: MCR718
Text: MCR716 MCR718 SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR716 and MCR718 are epoxy molded Silicon Controlled Rectifiers designed for sensing circuit applications and
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MCR716
MCR718
50Hz/60Hz)
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thyristor of silicon controlled rectifier
Abstract: Silicon Controlled Rectifier 50 amp "Silicon Controlled Rectifier" Silicon Controlled Rectifier
Text: CSD-8M CSD-8N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 8 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control
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100mA
17-February
thyristor of silicon controlled rectifier
Silicon Controlled Rectifier 50 amp
"Silicon Controlled Rectifier"
Silicon Controlled Rectifier
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Silicon Controlled Rectifier 50 amp
Abstract: Marking A2s MCR703A MCR704A MCR706A MCR708A
Text: MCR703A MCR706A MCR704A MCR708A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 100 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded Silicon Controlled Rectifiers designed for
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MCR703A
MCR706A
MCR704A
MCR708A
MCR703A,
MCR704A,
MCR706A,
MCR708A
MCR703A
Silicon Controlled Rectifier 50 amp
Marking A2s
MCR704A
MCR706A
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thyristor of 12 amp
Abstract: marking 4n
Text: CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control
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12-February
thyristor of 12 amp
marking 4n
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thyristor tic106
Abstract: tlc106 tic106 TIC106 TO-220 tc106 "Silicon Controlled Rectifiers" Silicon Controlled Rectifiers Gate Turn-off Thyristor to220 CA741CE
Text: TC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright 0 1997. Power Innovations Limited, UK APRIL 1971- REVlSED MARCH 1997 5 A Continuouo On-State Current TO-220 PACKAGE t-rOP VIEW 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-Stata Voltage
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TC106
O-220
TlC106
thyristor tic106
tic106
TIC106 TO-220
"Silicon Controlled Rectifiers"
Silicon Controlled Rectifiers
Gate Turn-off Thyristor to220
CA741CE
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Untitled
Abstract: No abstract text available
Text: CHAPTER 2 Selector Guide In Brief . . . Page SCRs: Silicon Controlled Rectifiers . . . . . . . . . . . . . . . 249 TRIACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252 Surge Suppressors and Triggers . . . . . . . . . . . . . . . . . 256
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mcr12
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information *Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 400 thru 800 VOLTS Designed primarily for half–wave ac control applications, such as motor
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MCR12/D
MCR12
220AB
21A-06
O-220AB)
MCR12/D*
mcr12
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S2800
Abstract: 221A-04 CASE 221A-04 S2800 Series s2800d
Text: MOTOROLA Order this document by S2800/D SEMICONDUCTOR TECHNICAL DATA S2800 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
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S2800/D
S2800
21A-04
O-220AB)
S2800/D*
S2800
221A-04
CASE 221A-04
S2800 Series
s2800d
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Thyristor Device Data motorola
Abstract: MCR12 MCR12M MCR12N
Text: MOTOROLA Order this document by MCR12/D SEMICONDUCTOR TECHNICAL DATA MCR12 SERIES* Advance Information *Motorola preferred devices Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 12 AMPERES RMS 600 thru 800 VOLTS Designed primarily for half–wave ac control applications, such as motor
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MCR12/D
MCR12
220AB
21A-09
O-220AB)
Thyristor Device Data motorola
MCR12
MCR12M
MCR12N
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