Untitled
Abstract: No abstract text available
Text: SKT 130 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor SKT 130 Features # $%&'% * '%(+, *+-% .)(/ 0,+-)1-2,+(3& 4/&%+5%5 -(25 678 9:;<:=> 61(%&1+()31+, -(+15+&5 *+-% # # Typical Applications* # ?@ '3(3& *31(&3, # # # B%C 0C D3& '+*/)1% (33,-E @31(&3,%5 &%*()D)%&B%C 0C D3& F+(%&G */+&0)10E
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64J97
48iYO_
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Untitled
Abstract: No abstract text available
Text: SKHI 23/12 R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions ?.1C3 '7 69CH G.H 69CKK G.H jCA=*BA310 ;CB
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OCAP30
LCAB30-1N
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Untitled
Abstract: No abstract text available
Text: SKT 250 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor NL79 NLL9> NCL9 N ?PP ^PP =SPP =?PP N ;PP ZPP =:PP =;PP 64JN R :?P J F- 1G =ZP[ 4* R Z? ¥DH 7]4 :?PUP;C 7]4 :?PUPZC 7]4 :?PU=:_ 7]4 :?PU=;_ =WPP =`PP 7]4 :?PU=`_ Symbol Conditions 64JN 6C -)1G =ZP[ 4* R =PP FZ?H ¥D[
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64L97
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Untitled
Abstract: No abstract text available
Text: SKiiP 03AC066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter +#5 @ + #5 5 / '& 1
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03AC066V1
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Untitled
Abstract: No abstract text available
Text: TCU4_320H Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 3200 Amperes 2800 Volts 724 925-7272 WWW.PWRX.COM 7KH 7&8 LV D KLJK YROWDJH KLJK FXUUHQW GLVF SDFN 6&5 HPSOR\LQJ D KLJK GLGW JDWH VWUXFWXUH 7KLV JDWH GHVLJQ DOORZV
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Abstract: No abstract text available
Text: TCU4_320H Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 3200 Amperes 2800 Volts 724 925-7272 WWW.PWRX.COM 7KH 7&8 LV D KLJK YROWDJH KLJK FXUUHQW GLVF SDFN 6&5 HPSOR\LQJ D KLJK GLGW JDWH VWUXFWXUH 7KLV JDWH GHVLJQ DOORZV
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DO-214AA package
Abstract: No abstract text available
Text: . . . . . Engineered solutions for the transient environment PP0641SA thru PP0901SC UNIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR APPLICATIONS ● ● ● ● ● IEC 1000-4 COMPATIBLE SLIC Line Card DBX Branch Exchange Switches FCC Part 68 Customer Premise Equipment
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PP0641SA
PP0901SC
DO-214AA
DO-214AA package
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PP0641SA
Abstract: DO-214AA package power rating
Text: 05112 PP0641SA . . . engineered solutions for the transient environment UNIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR APPLICATIONS ✔ SLIC Line Card ✔ DBX Branch Exchange Switches ✔ FCC Part 68 Customer Premise Equipment ✔ Line Interface Modem ✔ ISDN Architecture Interface
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PP0641SA
EN61000-4)
5/50ns
DO-214AA
PP0641SA
DO-214AA package power rating
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DO-214AA package
Abstract: .26c marking code
Text: ® . . . . . Engineered solutions for the transient environment PP0641SA thru PP0901SC UNIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR IEC 1000-4 COMPATIBLE APPLICATIONS ● ● ● ● ● SLIC Line Card DBX Branch Exchange Switches FCC Part 68 Customer Premise Equipment
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PP0641SA
PP0901SC
DO-214AA
DO-214AA package
.26c marking code
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DO-214AA package 83A
Abstract: DO-214AA package power rating
Text: 05112 PP0641SA . . . engineered solutions for the transient environment UNIDIRECTIONAL THYRISTOR SURGE SUPPRESSOR APPLICATIONS ✔ SLIC Line Card ✔ DBX Branch Exchange Switches ✔ FCC Part 68 Customer Premise Equipment ✔ Line Interface Modem ✔ ISDN Architecture Interface
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PP0641SA
EN61000-4)
5/50ns
DO-214AA
DO-214AA package 83A
DO-214AA package power rating
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Untitled
Abstract: No abstract text available
Text: 05112 PP0641SA Only One Name Means ProTek’Tion THYRISTOR SURGE SUPPRESSOR APPLICATIONS ✔ SLIC Line Card ✔ DBX Branch Exchange Switches ✔ FCC Part 68 Customer Premise Equipment ✔ Line Interface Modem ✔ ISDN Architecture Interface IEC COMPATIBILITY EN61000-4
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PP0641SA
EN61000-4)
5/50ns
DO-214AA
DO-214AA
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SGCT
Abstract: mitsubishi SGCT sGCT function WESTINGHOUSE ELECTRIC scr topologies pulse transformer driver IGBT APPLICATION westinghouse power rectifiers international rectifier GTO WESTINGHOUSE RECTIFIERS GTO thyristor 3000V 800A GTO thyristor driver
Text: 896 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 37, NO. 3, MAY/JUNE 2001 A New Current-Source Converter Using a Symmetric Gate-Commutated Thyristor SGCT Navid R. Zargari, Member, IEEE, Steven C. Rizzo, Member, IEEE, Yuan Xiao, Associate Member, IEEE,
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: I I Bulletin 127097 rev. A 09/97 International I0 R Rectifier IRK.F102. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 105 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility
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20ohm:
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triode rn 1016
Abstract: 2N1778A thyristor st 103
Text: Discrete Semiconductors C10 Series: 2N1770A-2N2619A Semitronics Phase Control SCR 4.7 Amps 125-600 Volts Description Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control
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2N1770A-2N2619A
MIL-PRF-19500/168
2N1770A
triode rn 1016
2N1778A
thyristor st 103
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SG2200GXH24
Abstract: SG2200FXF24 thyristor 2200A
Text: TOSHIBA SG2200FXF24,SG2200GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG2200FXF24, SG2200GXH24 Unit in mm INVERTER APPLICATION 2 - 0 3 . 5 + 0.2 DEPTH 2.1 ±0 .4 Repetitive Peak Off-State Voltage : V]}R]y[ = 4500V, 3300V R.M.S On-State Current : It RMS = 1000A
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SG2200FXF24
SG2200GXH24
SG2200FXF24,
2200a
00A//Â
000V//Â
10ms-Width
SG2200GXH24
thyristor 2200A
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irkt 132 12
Abstract: No abstract text available
Text: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate
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4B55452
S545E
JDDlb74b
irkt 132 12
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SG800W24
Abstract: SG800EX24 fsi T 20A SG800R24 SG800U24 A6312
Text: TOSHIBA SG800R24,SG800U24,SG800W24,SG800EX24 TOSHIBA GATE TURN-OFF THYRISTOR SG800R24, SG800U24, SG800W24, SG800EX24 Unit in mm CHOPPER, INVERTER APPLICATION 2—0 3.6±0.2 • Repetitive Peak Off-State Voltage • • • • : V d r m = 1300, 1600, 1800,
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SG800R24
SG800U24
SG800W24
SG800EX24
SG800R24,
SG800U24,
SG800W24,
00A//Â
000V//Â
SG800EX24
fsi T 20A
A6312
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY w . S E M I C O N D U C T O R S DS4096-2.2 DG858BW45 GATE TURN-OFF THYRISTOR KEY PARAMETERS 4000A 3000A V 4500V DRM 1180A 1000V/HS W jd t dl/dt 300A/|is APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies
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DS4096-2
DG858BW45
000V/HS
37fciÃ
DD3GG53
37bflS22
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60nf
Abstract: C52250
Text: @ M ITEL DG758BX45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4095 - 5.2 DS4095 - 5.3 APPLICATIONS March 1998 KEY PARAMETERS • Variable speed A.C. motor drive inverters VSD-AC . 't c m 3° ° ° A ■ Uninterruptable Power Supplies
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DS4095
DG758BX45
60nf
C52250
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM20DA-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM20DA-M,-H Average on-state current 20A V rrm Repetitive peak reverse voltage 400/800V V d rm Repetitive peak off-state voltage 400/800V DOUBLEARMS Insulated Type UL Recognized
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TM20DA-M
400/800V
E80276
E80271
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IN457A
Abstract: IN540 VAA21 MS IN540 u226 PW-250 bfi transformer ini763 2N3027 2N3028
Text: MIL SPECS I C | 000D15S QDD3SE7 b | Ml L-S - 195G0/4'!9 £l AMiiNDMclS i- i 21 May 1969 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, THYRISTOR (CONTROLLED RECTIFIER), SILICON TYPES 2N3027 THROUGH 2N 3032, AND TX2N3027 THROUGH TX2N3032 This Amendment forms o port of M ilitary
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95GGA
2N3027
2N3032,
TX2N3027
TX2N3032
L-S-19500/419
MIL-STD-1276,
MIL-STD-1276)
5961-A230
IN457A
IN540
VAA21
MS IN540
u226
PW-250
bfi transformer
ini763
2N3028
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BTS 110
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS110 Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints see chapter Technical Inform ation
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BTS110
O-220AB
C67078-A5008-A2
BTS110
C67078-A5008-A3
E3045
C67078-A5008-A4
BTS 110
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2N1793
Abstract: 50-20UNF-2A 2N1792 2N1795 2N1797 2N1798 2N1799 2N1800 2n203 2N1792 JAN
Text: MIL SPECS I C B 00001ES 0002331 L> • MIL-S-19500/204F i i w f 9 R 2 '' MIL-S-19500/204E 19 August 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR, REVERSE BLOCKING, SILICON, TYPES 2N1792 2N1793, 2N1795, 2N1797, 2N1798, 2N1799, 2N1800, 2N1805,
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00001ES
00D2331
MIL-S-19500/204F
MIL-S-19500/204E
2N1792
2N1793,
2N1795,
2N1797,
2N1798,
2N1799,
2N1793
50-20UNF-2A
2N1795
2N1797
2N1798
2N1799
2N1800
2n203
2N1792 JAN
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