Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR THYRISTOR CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE It ( V d r m . 400V/600V
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00V/600V
E80276
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA T3A6CI I'.; -D irectional Triode Thyristor 3A Mold TRIAC FEATURES • • • • Repetitive Peak O ff-state Voltage : V drm=600V. R.M.S O n-S tate Current : I t rms =3A. High Commutation (dv/dt) Isolation Voltage : V isol=1500V AC
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E166398)
T0-220IS
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Untitled
Abstract: No abstract text available
Text: T3A6CI SEMICONDUCTOR Bi-Directional Triode Thyristor 3A Mold TRIAC TECHNICAL DATA FEATURES ᴌRepetitive Peak Off-state Voltage : VDRM=600V. A ᴌR.M.S On-State Current : IT RMS =3A. C DIM A B C D E F P F U ᴌHigh Commutation (dv/dt) E S B ᴌIsolation Voltage : VISOL=1500V AC
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E166398)
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TF321S
Abstract: TF341S TF361S
Text: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A
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O-220F
TF321S,
TF341S,
TF361S
TF321S
TF341S
TF361S
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TF361M
Abstract: TF341M TF321M
Text: TO-220 3A Thyristor TF321M / TF341M / TF361M • Features External Dimensions Unit: mm 12.0 min ●Gate trigger current: IGT=10mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 3.0±0.2 8.8±0.2
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O-220
TF321M
TF341M
TF361M
TF321M
TF341M
TF361M
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Untitled
Abstract: No abstract text available
Text: TO-220 3A Thyristor TF321M / TF341M / TF361M • Features External Dimensions Unit: mm 12.0 min ●Gate trigger current: IGT=10mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 0.2 0.2 3.0±
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O-220
TF321M
TF341M
TF361M
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TF321S
Abstract: TF341S TF361S 842 402
Text: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 3.9±0.2 0.8±0.2 16.9± 0.3 ●Average on-state current: IT(AV)=3A
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O-220F
TF321S,
TF341S,
TF361S
TF321S
TF341S
TF361S
842 402
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ZO 103 TRIAC
Abstract: Triac 3a 600v
Text: SEMICONDUCTOR TECHNICAL DA TA T3A6CIA Bi-Directional Triode Thyristor Silicon Planar Type 3A Mold TRIAC FEATURES • • • • Repetitive Peak Off-state Voltage : V drm=600V. R.M.S On-State Current : I t rm s = 3A . High Commutation (dv/dt) Isolation Voltage : V iso l = 1 5 0 0 V AC
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E166398)
220IS
ZO 103 TRIAC
Triac 3a 600v
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Untitled
Abstract: No abstract text available
Text: TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A • Features External Dimensions Unit: mm 12.0 min ●High sensitive Gate trigger Current: IGT=0.1mA max 2.1max φ 3.75±0.1 a b ±0.15 1.35 4.0 max ●Average on-state current: IT(AV)=3A 5.0max
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O-220
TF321M-A,
TF341M-A,
TF361M-A
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TF321M-A
Abstract: TF341M-A TF361M-A TF361MA
Text: TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A • Features External Dimensions Unit: mm 12.0 min ●High sensitive Gate trigger Current: IGT=0.1mA max 2.1max φ 3.75±0.1 a b ± 1.35 0.15 4.0 max ●Average on-state current: IT(AV)=3A 5.0max
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O-220
TF321M-A,
TF341M-A,
TF361M-A
TF321M-A
TF341M-A
TF361M-A
TF361MA
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Untitled
Abstract: No abstract text available
Text: TO-220F 3A Thyristor TF321S, TF341S, TF361S • Features External Dimensions φ 3.3±0.2 ●Gate trigger current: IGT=15mA max 13.0 min ●Isolation voltage: VISO=1500V 50Hz Sine wave, RMS 0.2 0.2 3.9± 0.8± 16.9± 0.3 ●Average on-state current: IT(AV)=3A
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O-220F
TF321S,
TF341S,
TF361S
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Untitled
Abstract: No abstract text available
Text: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47, SF3JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 3A
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SF3GZ47
SF3JZ47
SF3GZ47,
SF3JZ47
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M3JZ47
Abstract: SM3JZ47 m3gz47 13-10H1A SM3GZ47 M3JZ
Text: SM3GZ47,SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47,SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S ON−State Current : IT RMS = 3A High Commutating (dv / dt)
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SM3GZ47
SM3JZ47
SM3GZ47
50transportation
M3JZ47
SM3JZ47
m3gz47
13-10H1A
M3JZ
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M3JZ47
Abstract: m3gz47 SM3JZ47 SM3GZ47 TOSHIBA c TOSHIBA THYRISTOR
Text: SM3GZ47, SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT RMS = 3A High Commutating (dv / dt)
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SM3GZ47,
SM3JZ47
SM3GZ47
M3JZ47
m3gz47
SM3JZ47
SM3GZ47
TOSHIBA c
TOSHIBA THYRISTOR
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F3JZ47
Abstract: f3GZ47 SF3JZ47 TOSHIBA Thyristor SF3GZ47
Text: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47, SF3JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 3A
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SF3GZ47
SF3JZ47
SF3GZ47,
SF3GZ47
F3JZ47
f3GZ47
SF3JZ47
TOSHIBA Thyristor
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN1873A _ D R D 3 N0.1873A Silicon Diffused Junction Type 3.0A Reverse Blocking Thyristor Fe atu re s •Glass passivation for high reliability ■Peak OFF-state reverse voltage : -100 to -600V * Average ON-state current : 3A
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EN1873A
T0220
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m3j48
Abstract: TOSHIBA TRIODE SM3G48 SM3J48 USM3G48 USM3J48 TOSHIBA THYRISTOR
Text: SM3G48,USM3G48,SM3J48,USM3J48 TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G48,USM3G48,SM3J48,USM3J48 AC POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : VDRM=400, 600V R.M.S On-State Current : IT RMS =3A Gate Trigger Current
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SM3G48
USM3G48
SM3J48
USM3J48
SM3G48,
SM3J48
m3j48
TOSHIBA TRIODE
USM3J48
TOSHIBA THYRISTOR
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M3G45
Abstract: M3J45 SM3J45 SM3G45 m3g4
Text: SM3G45, SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45, SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V R.M.S On−State Current: IT RMS = 3A High Commutating (dv / dt) MAXIMUM RATINGS
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SM3G45,
SM3J45
SM3G45
M3G45
M3J45
SM3J45
SM3G45
m3g4
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F3J48
Abstract: F3G48 SF3G48 SF3J48 USF3G48 USF3J48 TOSHIBA Thyristor
Text: SF3G48, SF3J48, USF3G48, USF3J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3G48, SF3J48, USF3G48, USF3J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V,600V Repetitive Peak Reverse Voltage: VRRM = 400V,600V Average On−State Current: IT AV = 3A
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SF3G48,
SF3J48,
USF3G48,
USF3J48
SF3J48
F3J48
F3G48
SF3G48
SF3J48
USF3G48
USF3J48
TOSHIBA Thyristor
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Thyristor t0202
Abstract: VGT200
Text: Ordering number : EN1876C _ D T B 3 N0.1876C F Silicon Diffused Junction Type 3.0A Bidirectional Thyristor Features •Glass passivation for high reliability •Peak OFF-state voltage : 100 to 600V •R M S ON-state current: 3A ■TO-202 package
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l876C
T0-202
Thyristor t0202
VGT200
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SF3JZ47
Abstract: SF3GZ47 SF3JZ47
Text: SF3GZ47,SF3JZ47 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF3GZ47,SF3JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 3A
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SF3GZ47
SF3JZ47
SF3GZ47
SF3JZ47
SF3GZ47 SF3JZ47
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thyristor guide
Abstract: M3G45 M3J45 SM3G45 SM3J45 m3j4
Text: SM3G45,SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45,SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage : VDRM = 400, 600V R.M.S ON−State Current : IT RMS = 3A High Commutating (dv / dt) MAXIMUM RATINGS
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SM3G45
SM3J45
SM3G45
thyristor guide
M3G45
M3J45
SM3J45
m3j4
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m3gz47
Abstract: M3JZ47
Text: SM3GZ47, SM3JZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47, SM3JZ47 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 3A z High Commutating (dv / dt)
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SM3GZ47,
SM3JZ47
SM3GZ47
SM3JZ47
m3gz47
M3JZ47
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M3G45
Abstract: m3j4 M3J45 TOSHIBA TRIODE TOSHIBA THYRISTOR SM3J45 thyristor handbook design
Text: SM3G45, SM3J45 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3G45, SM3J45 AC POWER CONTROL APPLICATIONS Unit: mm z Repetitive Peak Off−State Voltage: VDRM = 400V, 600V z R.M.S On−State Current: IT RMS = 3A z High Commutating (dv / dt)
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SM3G45,
SM3J45
SM3G45
SM3J45
M3G45
m3j4
M3J45
TOSHIBA TRIODE
TOSHIBA THYRISTOR
thyristor handbook design
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